Abstract
Terahertz (THz) imaging is currently based on linear effects, but there is great interest on how nonlinear effects induced by terahertz radiation could be exploited to provide extra information that is unobtainable by conventional imaging schemes. In particular, at field strengths on the order of to , transmission properties inside semiconductor materials are largely affected at the picosecond time-scale, which raise the prospect of interesting nonlinear imaging applications at THz frequencies. Here, we experimentally investigate a method to map the two-dimensional nonlinear near-field distribution of an intense THz pulse passing through a thin film-doped semiconductor. By inserting a metamaterial structure between the electro-optic sensor and the doped film, the nonlinear near-field dynamics shows a different and enhanced contrast of the sample when compared to its linear counterpart.
© 2018 Optical Society of America
Full Article | PDF ArticleMore Like This
X. Chai, X. Ropagnol, A. Ovchinnikov, O. Chefonov, A. Ushakov, C. M. Garcia-Rosas, E. Isgandarov, M. Agranat, T. Ozaki, and A. Savel’ev
Opt. Lett. 43(21) 5463-5466 (2018)
Tianlong Wen, Chong Zhang, Xiaochen Zhang, Yulong Liao, Quanjun Xiang, Qiye Wen, Dainan Zhang, Yuanpeng Li, Huaiwu Zhang, Yulan Jing, and Zhiyong Zhong
Opt. Lett. 43(13) 3021-3024 (2018)
O. V. Chefonov, A. V. Ovchinnikov, S. A. Romashevskiy, X. Chai, T. Ozaki, A. B. Savel’ev, M. B. Agranat, and V. E. Fortov
Opt. Lett. 42(23) 4889-4892 (2017)