Abstract

Together with III–V InP, chalcopyrite I–III–VI metal chalcogenides particularly with the compositions of A–B–S ($\mathrm{A}={\mathrm{Cu}}^{+}$, ${\mathrm{Ag}}^{+}$, $\mathrm{B}={\mathrm{In}}^{3+}$, ${\mathrm{Ga}}^{3+}$) are regarded as an emerging non-Cd class for synthesis of visible-emitting colloidal quantum dots (QDs) and the following fabrication of QD-light-emitting diodes (QLEDs). To date, the composition of I–III–VI QDs which were exploited for QLED fabrication remains highly limited, with most devices demonstrated from Cu–In–S-based ones. Herein, we explore the synthesis of two Ga-based I–III–VI QDs of Ag–Ga–S (AGS) and Cu–Ga–S (CGS) QDs and their application to QLED fabrication. Using cyan AGS/ZnS and azure CGS/ZnS core/shell QDs, all-solution-processed, multilayered QLEDs with a hybrid combination of organic hole transport layer and inorganic electron transport layer are fabricated and compared. We observe that CGS QLED by far outperforms in luminance and efficiency its AGS counterpart, which is ascribable to the differences in both electronic band structure and core/shell structure between two comparative QDs.

© 2018 Optical Society of America

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