Abstract

An $\mathrm{Er}\text{:}\mathrm{Yb}\text{:}{\mathrm{Lu}}_2{\mathrm{Si}}_2{\mathrm{O}}_7$ microchip laser was constructed by placing a 1.2 mm thick, $Y$-cut $\mathrm{Er}\text{:}\mathrm{Yb}\text{:}{\mathrm{Lu}}_2{\mathrm{Si}}_2{\mathrm{O}}_7$ microchip between two 1.2 mm thick sapphire crystals, in which input and output mirrors were directly deposited onto one face of each crystal. End-pumped by a continuous-wave 975.4 nm diode laser, a 1564 nm multi-longitudinal-mode laser with a maximum output power of 940 mW and slope efficiency of 20% was realized at an absorbed pump power of 5.5 W when the transmission of output mirror was 2.2%. When the transmission of the output mirror was increased to 6%, a 1537 nm single-longitudinal-mode laser with a maximum output power of 440 mW and slope efficiency of 12% was realized at an absorbed pump power of 4.3 W. The results indicate that the $\mathrm{Er}\text{:}\mathrm{Yb}\text{:}{\mathrm{Lu}}_2{\mathrm{Si}}_2{\mathrm{O}}_7$ crystal is a promising microchip gain medium to realize a single-longitudinal-mode laser.

© 2018 Optical Society of America

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