Abstract

${\mathrm{BaTiO}}_3$ crystal thin film has been investigated to realize electro-optic (EO) devices due to its ultrahigh EO effect, but not much research has been focused on the correct axis orientation and EO coefficient. In this Letter, with a ${\mathrm{BaTiO}}_3$ crystal film grown by pulse laser deposition technique on $⟨100⟩$ MgO crystal substrate, an embedded device configuration having the two-step etched waveguide/electrode scheme is designed to reach a high optic-electrical field interaction efficiency, and a 45° outside electric field with an in-plane axis is set to fit the possibility of the a-axis or c-axis orientation of the ${\mathrm{BaTiO}}_3$ crystal film. Then, through a poling process to the sample, the $1\pi$, $2\pi$, and $3\pi$ EO modulations of linear polarization are implemented at 4.9, 9.3, and 11.8 V, respectively, and a decremental voltage period is found. Thereby, a c-axis oriented ${\mathrm{BaTiO}}_3$ crystal film is determined, so that the nonlinear modulation equation is exploited. Finally, with an overlap of $1\pi$, $2\pi$, and $3\pi$ modulations, the coherent EO coefficient $r_{51}$ and birefringence of 606 pm/V and $-0.0215$ are obtained, resulting in one ${(V\pi )}^{2}L$ value of 68 (${\mathrm{V}}^2·\mathrm{mm}$).

© 2019 Optical Society of America

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