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Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip

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Abstract

We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.7 dB/cm at 1479 nm based on the quality factor measured in microring resonators. Gain measurements were carried out in straight and 6.7-cm-long s-bend waveguides realized on a 2.2-cm-long chip. We measure internal net gain over the wavelength range 1860–2000 nm under 1620 nm pumping and up to 7.6 dB total gain at 1870 nm, corresponding to 1.1 dB/cm. These results are promising for the realization of highly compact thulium-doped amplifiers in the emerging 2 μm band for silicon-based photonic microsystems.

© 2019 Optical Society of America

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Corrections

Khadijeh Miarabbas Kiani, Henry C. Frankis, Hamidu M. Mbonde, Richard Mateman, Arne Leinse, Andrew P. Knights, and Jonathan D. B. Bradley, "Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip: publisher’s note," Opt. Lett. 46, 1928-1928 (2021)
https://opg.optica.org/ol/abstract.cfm?uri=ol-46-8-1928

29 March 2021: A typographical correction was made to an e-mail address.


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