Abstract

This Letter compared the absorption characteristics of a homemade graphene-${\mathrm{Bi}}_2{\mathrm{Te}}_3$ (G-B) van der Waals heterostructure to a ${\mathrm{Bi}}_2{\mathrm{Te}}_3$ topological insulator (TI) with a similar preparation method and number of layers. The results indicate that the G-B heterostructure can tremendously enhance the modulation depth and saturable intensity. In addition, a passively $Q$-switched laser at 1.06 μm with a G-B heterostructure as a saturable absorber (SA) was demonstrated for the first time, to the best of our knowledge. Compared to ${\mathrm{Bi}}_2{\mathrm{Te}}_3$ TI, the G-B heterostructure $Q$-switched laser had better laser performance, indicating that a G-B heterostructure is a promising SA candidate for a 1 μm laser.

© 2019 Optical Society of America

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