Silicon nitride (SiN) is currently the most prominent CMOS-compatible platform for photonics at wavelengths . However, realizing fast electro-optic (EO) modulators, the key components of any integrated optics platform, remains challenging in SiN. Modulators based on the plasma dispersion effect, as in silicon, are not available. Despite the fact that significant second-harmonic generation has been reported for silicon-rich SiN, no efficient Pockels effect-based modulators have been demonstrated. Here we report the back-end CMOS-compatible atomic layer deposition (ALD) of conventional second-order nonlinear crystals, zinc oxide, and zinc sulfide, on existing SiN waveguide circuits. Using these ALD overlays, we demonstrate EO modulation in ring resonators.
© 2019 Optical Society of AmericaFull Article | PDF Article
19 February 2019: A typographical correction was made to the abstract and paragraph 1 4 on page 1112.
More Like This
Pu Zhang, Haijin Huang, Yongheng Jiang, Xu Han, Huifu Xiao, Andreas Frigg, Thach G. Nguyen, Andreas Boes, Guanghui Ren, Yikai Su, Yonghui Tian, and Arnan Mitchell
Opt. Lett. 46(23) 5986-5989 (2021)
Abu Naim R. Ahmed, Sean Nelan, Shouyuan Shi, Peng Yao, Andrew Mercante, and Dennis W. Prather
Opt. Lett. 45(5) 1112-1115 (2020)
Abu Naim R. Ahmed, Shouyuan Shi, Mathew Zablocki, Peng Yao, and Dennis W. Prather
Opt. Lett. 44(3) 618-621 (2019)