Abstract
Understanding of the carrier concentration properties of current spreading layers in LED devices is important although difficult to achieve. Here, we present a solution to determine the carrier concentration for current spreading layers in ZnO-based LEDs, based on Raman spectroscopy. Raman spectra and lineshape fitting indicate a hole concentration below in the -type region and an electron concentration of in -type. The results from Raman spectroscopy are further qualitatively confirmed by the electroluminescence spectrum and device simulation, which demonstrates its possible application in carrier concentration assessment in multilayered structures.
© 2019 Optical Society of America
Full Article | PDF ArticleMore Like This
Jiangnan Dai, Jingwen Chen, Xiaohang Li, Jun Zhang, Hanling Long, Haochung Kuo, Yunbin He, and Changqing Chen
Opt. Lett. 44(8) 1944-1947 (2019)
Hao Long, Songzhan Li, Xiaoming Mo, Haoning Wang, Zhao Chen, Zhe Chuan Feng, and Guojia Fang
Opt. Express 22(S3) A833-A841 (2014)
Jinxin Chen, Weijun Zhu, Yuhan Gao, Deren Yang, and Xiangyang Ma
Opt. Express 27(21) 30919-30930 (2019)