Abstract
A high-power germanium photodetector is designed and fabricated using a cold-wall ultrahigh vacuum chemical vapor deposition. A back-to-back dual-absorption structure improves high-power characteristics by reducing the space-charge effect. Compared to a typical p-i-n photodetector, the saturated photocurrent of the back-to-back dual-absorption photodetector is improved from 16.2 to 21.3 mA at $ - {3}\;{\rm V}$. At a bias voltage of $ - {1}\;{\rm V}$, the dark current is 1.31 µA. The optical responsivities are 0.31 and 0.52 A/W at 1550 and 1310 nm, respectively. The 3 dB bandwidth of 4.14 GHz is achieved at $ - {3}\;{\rm V}$. Theoretically, the 3 dB bandwidth can be further optimized in future device fabrication.
© 2020 Optical Society of America
Full Article | PDF ArticleMore Like This
Yupeng Zhu, Zhi Liu, Chaoqun Niu, Yaqing Pang, Diandian Zhang, Xiangquan Liu, Jun Zheng, Yuhua Zuo, Haiyun Xue, and Buwen Cheng
Opt. Lett. 47(13) 3263-3266 (2022)
Yan Zuo, Yu Yu, Yu Zhang, De Zhou, and Xinliang Zhang
Opt. Lett. 44(13) 3338-3341 (2019)
Xiao Hu, Hongguang Zhang, Dingyi Wu, Daigao Chen, Lei Wang, Xi Xiao, and Shaohua Yu
Opt. Lett. 46(16) 3837-3840 (2021)