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Abstract
We report a GaN-based self-powered metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetector (PD) by employing a “lateral polarity structure (LPS)” grown on the sapphire substrate. An in-plane internal electric field and different Schottky barrier heights at a metal/semiconductor interface lead to efficient carrier separation and self-powered UV detection. A dark current of ${6.8}\;{{\rm nA/cm}^2}$ and detectivity of ${1.0} \times {{10}^{12}}$ Jones were obtained without applied bias. A high photo-to-dark current ratio of ${1.2} \times {{10}^4}$ and peak responsivity of 933.7 mA/W were achieved for the lateral polarity structure-photodetector (LPS-PD) under ${-}{10}\;{\rm V}$. The enhanced performance of the LPS-PD was ascribed to the polarization-induced carrier separation as demonstrated by the lateral band diagram.
© 2021 Optical Society of America
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