Abstract

We proposed an ultra-thin Si-padded ${{\rm Si}_3}{{\rm N}_4}$ waveguide consisting of a very thin Si slab underneath a ${{\rm Si}_3}{{\rm N}_4}$ strip separated by a ${{\rm SiO}_2}$ layer. The Si slab and the ${{\rm Si}_3}{{\rm N}_4}$ strip form a hybrid waveguide mode, where the mode field is confined in these two structures. The measured waveguide propagation loss is 0.055 dB/cm, and the bending loss is 0.09 dB per 90° bend, depending on the bending radius. Because part of the waveguide mode is distributed in the Si slab, this waveguide structure has potential for implementing low-loss and high-speed photonic integrated circuits.

© 2021 Optical Society of America

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