Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board

Fedor Zubov; Fedor Zubov; Mikhail Maximov; Mikhail Maximov; Eduard Moiseev; Eduard Moiseev; Alexandr Vorobyev; Alexey Mozharov; Yuri Berdnikov; Yuri Berdnikov; Nikolay Kaluzhnyy; Sergey Mintairov; Marina Kulagina; Natalia Kryzhanovskaya; Natalia Kryzhanovskaya; Alexey Zhukov; Alexey Zhukov

doi:10.1364/OL.432920

Optics Letters
Vol. 46,
Issue 16,
pp. 3853-3856
(2021)
•https://doi.org/10.1364/OL.432920

Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board

Fedor Zubov, Mikhail Maximov, Eduard Moiseev, Alexandr Vorobyev, Alexey Mozharov, Yuri Berdnikov, Nikolay Kaluzhnyy, Sergey Mintairov, Marina Kulagina, Natalia Kryzhanovskaya, and Alexey Zhukov

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Fedor Zubov, Mikhail Maximov, Eduard Moiseev, Alexandr Vorobyev, Alexey Mozharov, Yuri Berdnikov, Nikolay Kaluzhnyy, Sergey Mintairov, Marina Kulagina, Natalia Kryzhanovskaya, and Alexey Zhukov, "Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board," Opt. Lett. 46, 3853-3856 (2021)

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Abstract

We study the impact of improved heat removal on the performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike the initial characteristics of microlasers on a GaAs substrate, the former’s bonding results in a decrease in thermal resistance by a factor of 2.3 (1.8) in microdisks with a diameter of 19 (31) µm, attributed to a thinner layered structure between the active region and the substrate and the better thermal conductivity of Si than GaAs. Bonded microdisk lasers show a 2.4–3.4-fold higher maximum output power, up to 21.7 mW, and an approximately 20% reduction in the threshold current. A record high 3 dB small-signal modulation bandwidth of 7.9 GHz for InGaAs/GaAs microdisk lasers is achieved.

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Data underlying the results presented in this Letter are not publicly available at this time but may be obtained from the authors upon reasonable request.

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	$Δ λ / Δ Q$ , nm/mW		$R_{T}$ , K/mW (Measured)		$R_{T}$ , K/mW (Simulated)
MDL $\emptyset$ , µm	19	31	19	31	19	31
Before bonding	0.112	0.047	1.40	0.59	1.27	0.61
After bonding	0.048	0.026	0.60	0.32	0.66	0.29

	$I_{t h}$ , mA		$P_{t o t}$ , mW
MDL $\emptyset$ , µm	19	31	19	31
Before bonding	9.4	21.4	3.6	6.4
After bonding	7.6	17.4	8.8	21.7

	$Δ λ / Δ Q$ , nm/mW		$R_{T}$ , K/mW (Measured)		$R_{T}$ , K/mW (Simulated)
MDL $\emptyset$ , µm	19	31	19	31	19	31
Before bonding	0.112	0.047	1.40	0.59	1.27	0.61
After bonding	0.048	0.026	0.60	0.32	0.66	0.29

	$I_{t h}$ , mA		$P_{t o t}$ , mW
MDL $\emptyset$ , µm	19	31	19	31
Before bonding	9.4	21.4	3.6	6.4
After bonding	7.6	17.4	8.8	21.7

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