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Temperature dependencies of the refractive index for Al-Ga-In-As metamorphic layers

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Abstract

Temperature dependencies of the refractive indices, $n$, for ${{\rm In}_x}{{\rm Ga}_{1 - x}}{\rm As}$ and ${{\rm In}_x}{{\rm Al}_{1 - x}}{\rm As}$ metamorphic layers with $x = {0.06} {-} {0.25}$ have been determined. For this purpose, we performed variable-temperature (80 to 400 K) measurements of the specular reflection coefficient using custom distributed-Bragg-reflector structures in the spectral range from 0.8 µm to 2.2 µm. All the compositions exhibited a nearly linear temperature dependence of $n$. For ${{\rm In}_x}{{\rm Ga}_{1 - x}}{\rm As}$, the temperature coefficient ($dn/dT$) increases from ${2.0} \cdot {{10}^{- 4}}\;{\rm K ^{- 1}}$ for $x = {0.06}$ to ${4.5} \cdot {{10}^{- 4}}\;{\rm K ^{- 1}}$ at $x = {0.25}$. In turn, the temperature coefficient of the ${{\rm In}_x}{{\rm Al}_{1 - x}}{\rm As}$ refractive index stays at the level of $({1.7 {-} 2.0}) \cdot {{10}^{- 4}}\;{\rm K ^{- 1}}$ at the considered indium contents.

© 2021 Optical Society of America

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Data underlying the results presented in this Letter are not publicly available at this time but may be obtained from the authors upon reasonable request.

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