Abstract

With the ever-increasing sophistication of integration of electronic devices, the problem of heat accumulation has become ever more serious. Here, a miniaturized photodetector with thermal stability was fabricated by combining the excellent characteristics of femtosecond laser direct writing (FsLDW) and silicon (Si). The sensing part of the photodetector is a Si microwire composed of Si nanoparticles and the sensing area is only 300 μm². As a result, the photodetector can work stably at a temperature as high as 100°C and the response speed of the photodetector becomes notably faster at high temperatures. Furthermore, an image sensor was successfully fabricated by integrating 16 photodetectors and the image sensor can also work stably at high temperatures. This work demonstrates the potential for application of photodetectors based on Si microwires prepared by FsLDW under harsh conditions.

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