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High-power laser diode at 9xx nm with 81.10% efficiency

Liang Wang, Hongwei Qu, Aiyi Qi, Xuyan Zhou, and Wanhua Zheng

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Abstract

In this study, a low-resistance, low-loss, continuously gradual composition extreme double asymmetric (CGC-EDAS) epitaxial structure is designed to improve efficiency. The structure and facet reflectivity of the broad area (BA) lasers are optimized to maximize the power conversion efficiency (PCE). In the experiment, the peak PCE of 75.36% is measured at 25°C. At 0°C, a peak PCE of 81.10% is measured and the PCE can still reach 77.84% at an output power of 17.10 W, which, to the best of our knowledge, is the highest value to date for any BA lasers.

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Data underlying the results presented in this Letter are not publicly available at this time but may be obtained from the authors upon reasonable request.

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