Abstract

In this Letter, we describe the fabrication of three dimensional (3D) truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on β-Ga₂O₃ substrate. In the 3D n-GaN layer, it is noted that the longitudinal growth rate of the 3D n-GaN layer increases as the flow rate of N₂ decreases and H₂ increases. Moreover, the 3D THP VLED can effectively suppress the quantum-confined Stark effect (QCSE) compared with planar VLEDs due to the semipolar facets and strain relaxation. Thus, the internal quantum efficiency (IQE) of the 3D THP VLED has been doubled and the V-shaped pits have been greatly reduced. In particular, the 3D THP VLED enables multi-wavelength emission (448.0 nm and 498.5 nm) and also shows better light extraction efficiency (LEE), which presents an effective way for the realization of phosphor-free white LED devices.

© 2022 Optica Publishing Group

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