Abstract
Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum emission, the relationship between the IQE and shell coating remains unclear. This Letter reports mid-infrared PL measurements on InAs/InGaAs, InAs/AlSb, and InAs/GaSb c/s NWs, together with bare InAs NWs as a reference. Analyses show that the IQE is depressed by a shell coating at 9 K but gets improved by up to approximately 50% for the InGaAs shell coating at 40 –140 K and up to approximately 20% beyond 110 K for the AlSb shell. The effect is ascribed not only to the crystal quality but more importantly to the radial band alignment. The result indicates the high-temperature IQE improvement of the type-I and type-II c/s NWs and the appropriateness of the mid-infrared PL analyses for narrow-gap NW evaluation.
© 2022 Optica Publishing Group
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Xiren Chen, H. Alradhi, Zh. M. Jin, Liangqing Zhu, A. M. Sanchez, Shufang Ma, Qiandong Zhuang, and Jun Shao, "Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires: publisher’s note," Opt. Lett. 47, 5659-5659 (2022)https://opg.optica.org/ol/abstract.cfm?uri=ol-47-21-5659
10 October 2022: A typographical correction was made to the author affiliations.
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