Abstract

An all-nonmetal metamaterial (ANM) terahertz device with a silicon bowtie structure has been developed, which has comparable efficiency to that of its metallic counterparts, and better compatibility with modern semiconductor fabrication processes. Moreover, a highly tunable ANM with the same structure was successfully fabricated through integration with a flexible substrate, which demonstrated large tunability over a wide frequency range. Such a device can be used in terahertz systems for numerous applications, and is a promising substitute for conventional metal-based structures.

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