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Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect

Renfeng Chen, Yu Yin, Lulu Wang, Yaqi Gao, Rui He, Junxue Ran, Junxi Wang, Jinmin Li, and Tongbo Wei

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Abstract

We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compressive strain than a flat structure when a convex bending strain is applied. Moreover, the photoluminescence (PL) intensity exhibits a tendency to increase first and then decrease under the enhanced compressive strain. Specifically, light intensity reaches a maximum of about 123% accompanied by 1.1-nm blueshift, and the carrier lifetime comes to the minimum simultaneously. The enhanced luminescence characteristics are attributed to strain-induced interface polarized charges, which modulate the built-in field in InGaN/GaN MQWs and could promote the radiative recombination of carriers. This work opens a pathway to drastically improve InGaN-based long-wavelength micro-LEDs with highly efficient piezo-phototronic modulation.

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Data underlying the results presented in this Letter are not publicly available at this time but may be obtained from the authors upon reasonable request.

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