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Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings

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Abstract

Polarization detection in the short-wave infrared (SWIR) region presents broad applications in target-background contrast enhancement, underwater imaging, material classification, etc. A mesa structure can prevent electrical cross talk due to its intrinsic advantages, making it potentially suited to meet the need for manufacturing smaller-sized devices to save cost and shrink volume. In this Letter, mesa-structured InGaAs PIN detectors with a spectral response ranging from 900 nm to 1700 nm and a detectivity of 6.28 × 1011 cm·Hz1/2/W at 1550 nm and –0.1 V bias (room temperature) have been demonstrated. Furthermore, the devices with subwavelength gratings in four orientations show obvious polarization performance. Their extinction ratios (ERs) can reach 18:1 at 1550 nm and their transmittances are over 90%. Such a polarized device with a mesa structure could realize miniaturized SWIR polarization detection.

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Supplementary Material (1)

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Supplement 1       the extra description about devices

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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