Abstract

In this work, a 280-nm-wavelength deep-ultraviolet light-emitting diode (DUV LED) with a p⁺-GaN/SiO₂/ITO tunnel junction is fabricated and investigated. Due to the decreased tunnel region width and enhanced electric field intensity in the 1-nm-thick SiO₂ layer, the interband tunneling efficiency and the corresponding hole injection efficiency are promoted. Therefore, the external quantum efficiency (EQE) for the proposed device is increased when compared with a traditional DUV LED. In addition, an improved current spreading effect is observed for our proposed device. As a result, improved wall-plug efficiency (WPE) is obtained owing to the increased optical power and decreased forward operating voltage. Meanwhile, the enhanced electric field intensity in the SiO₂ layer reduces the voltage drop in the p-n junction region for the proposed device, and thus the leakage current is reduced.

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