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High-sensitivity transparent photoconductors in voltage-controlled silicon waveguides

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Abstract

On-chip optical power monitors are essential elements to calibrate, stabilize, and reconfigure photonic integrated circuits. Many applications require in-line waveguide detectors, where a trade-off has to be found between large sensitivity and high transparency to the guided light. In this work, we demonstrate a transparent photoconductor integrated on standard low-doped silicon-on-insulator waveguides that reaches a photoconductive gain of more than 106 and an in-line sensitivity as high as −60 dBm. This performance is achieved by compensating the effect of electric charges in the cladding oxide through a bias voltage applied to the chip substrate or locally through a gate electrode on top of the waveguide, allowing one to tune on demand the conductivity of the core to the optimum level.

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Data Availability

Data underlying the results presented in this paper may be obtained from the authors upon reasonable request.

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