Abstract

This letter reports a novel photodetector based on a metal-oxide-semiconductor field-effect transistor with a grating-gate structure, which was fabricated by employing the standard 0.8-µm complementary metal-oxide-semiconductor process. The use of a periodical slit structure allows the channel to be generated and exposed on the shallow surface, which makes the transmission and absorption of incident light more efficient, due to the surface plasmon resonance effect. The experimental results show that a responsivity (R_v) greater than 100 A/W was achieved within visible and near-infrared spectra under room temperature. Furthermore, a minimum noise equivalent power of 8.2 fW/Hz^0.5 at 15 Hz and a maximum detectivity (D*) of 1.7 × 10¹² Jones were obtained. It is believed that the photodetector will be widely used in communication or imaging systems.

© 2022 Optica Publishing Group

High-performance one-dimensional MOSFET array photodetectors in the 0.8-µm standard CMOS process

Yaxuan Liu, Jingye Sun, Ling Tong, Yuning Li, and Tao Deng
Opt. Express 30(24) 43706-43717 (2022)

Effective integration of a MOSFET phototransistor to a GaN LED for UV sensing

Jinlong Piao, Junhua Wu, Ziqi Ye, Hao Zhang, Jinjia Li, Pengzhan Liu, Hao Wang, Ziping Cao, and Yongjin Wang
Opt. Lett. 47(14) 3572-3575 (2022)

High-detectivity organic photodetectors with double bulk heterojunction enabled by water transfer printing

Yuhao Li, Dan Zhao, Dayong Zhang, Mengge Wu, Yuzhe Liu, and Junsheng Yu
Opt. Lett. 47(13) 3375-3378 (2022)

High-efficiency grating coupler based on fast directional optimization and robust layout strategy in 130 nm CMOS process

Xiangyu Luo, Guangcan Mi, Yanbo Li, and Tao Chu
Opt. Lett. 47(7) 1622-1625 (2022)

Ultrafast visible-infrared photodetector based on the SnSe₂/Bi₂Se₃ heterostructure

Cheng Guo, Changlong Liu, Shi Zhang, Chaofan Shi, Zhiqingzi Chen, XianBin Yu, and Xiaoshuang Chen
Opt. Lett. 47(19) 4977-4980 (2022)