Hybrid metal/Ga<sub>2</sub>O<sub>3</sub>/GaN ultraviolet detector for obtaining low dark current and high responsivity

Guansen Huang; Guansen Huang; Chunshuang Chu; Chunshuang Chu; Chunshuang Chu; Long Guo; Zupin Liu; Zupin Liu; Ke Jiang; Yonghui Zhang; Yonghui Zhang; Xiaojuan Sun; Zi-Hui Zhang; Zi-Hui Zhang; Zi-Hui Zhang; Dabing Li

doi:10.1364/OL.454717

Optics Letters
Vol. 47,
Issue 6,
pp. 1561-1564
(2022)
•https://doi.org/10.1364/OL.454717

Hybrid metal/Ga₂O₃/GaN ultraviolet detector for obtaining low dark current and high responsivity

Guansen Huang, Chunshuang Chu, Long Guo, Zupin Liu, Ke Jiang, Yonghui Zhang, Xiaojuan Sun, Zi-Hui Zhang, and Dabing Li

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Guansen Huang, Chunshuang Chu, Long Guo, Zupin Liu, Ke Jiang, Yonghui Zhang, Xiaojuan Sun, Zi-Hui Zhang, and Dabing Li, "Hybrid metal/Ga₂O₃/GaN ultraviolet detector for obtaining low dark current and high responsivity," Opt. Lett. 47, 1561-1564 (2022)

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Abstract

In this work, we have proposed and fabricated a metal/Ga₂O₃/GaN hybrid structure metal-semiconductor-metal ultraviolet photodetector with low dark current and high responsivity. The Schottky contact of Ni/Ga₂O₃ makes the Ga₂O₃ layer fully depleted. The strong electric field in the Ga₂O₃ depletion region can push the photo-induced electrons from the Ga₂O₃ layer into the GaN layer for more efficient carrier transport. Therefore, the hybrid structure simultaneously utilizes the advantage of the absorption to solar-blind ultraviolet light by the Ga₂O₃ layer and the high electron mobility of the GaN layer. Thus, the dark current and the photocurrent for the proposed device can be greatly improved. As a result, an extremely high photo-to-dark-current ratio of 1.46 × 10⁶ can be achieved. Furthermore, quick rise and fall times of 0.213 s and 0.027 s at the applied bias of 6 V are also obtained, respectively.

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Material	Dark Current (A)	Photo-to-Dark Ratio	References
Ga₂O₃/GaN	1.6 × 10⁻¹⁰ (10 V)	1375 (10 V, 8000 µW/cm²)	[20]
Ga₂O₃/GaN	7.25 × 10⁻¹⁰ (0 V)	272.15 (10 V, 2400 µW/cm²)	[21]
Ga₂O₃/GaN	<1 × 10⁻⁹ (8 V)	≈500 (2 V, 22,000 µW/cm²)	[2]
Ga₂O₃/GaN	>1 × 10⁻⁵ (40 V)	>100 (40 V, 6700 µW/cm²)	[19]
Sn:Ga₂O₃/GaN	1.8 × 10⁻¹¹ (0 V)	≈10⁴ (0 V, 1000 µW/cm²)	[22]
Ga₂O₃	70 (20 V)	45 (20 V)	[23]
Nanoporous-GaN/Ga₂O₃	2.8 × 10⁻⁵ (5 V)	39.28 (5 V, 2.44 µW/cm²)	[24]
Ni/Ga₂O₃/GaN	1.9 × 10⁻¹¹ (10 V)	1.46 × 10⁶ (10 V, 435 µW/cm²)	This work^a

Material	Rise and Decay Time (s)	Method	References
Ga₂O₃	2.97/0.41 (10 V)	MBE^a	[30]
Ga₂O₃	5.0/10.3 (20 V)	MBE	[23]
Ga₂O₃	0.41/0.04 (10 V)	MBE	[31]
SiC/Ga₂O₃	0.65/0.04 (5 V)	MOCVD	[10]
Ga₂O₃	0.58/1.2 (10 V)	MOCVD	[32]
Ga₂O₃/GaN	0.14/0.16 (2 V)	MOCVD	[21]
Nanoporous-GaN/Ga₂O₃	1.09/0.79 (10 V)	MBE	[24]
Ni/Ga₂O₃/GaN	0.213/0.027 (6 V)	MOCVD	This work

Material	Dark Current (A)	Photo-to-Dark Ratio	References
Ga₂O₃/GaN	1.6 × 10⁻¹⁰ (10 V)	1375 (10 V, 8000 µW/cm²)	[20]
Ga₂O₃/GaN	7.25 × 10⁻¹⁰ (0 V)	272.15 (10 V, 2400 µW/cm²)	[21]
Ga₂O₃/GaN	<1 × 10⁻⁹ (8 V)	≈500 (2 V, 22,000 µW/cm²)	[2]
Ga₂O₃/GaN	>1 × 10⁻⁵ (40 V)	>100 (40 V, 6700 µW/cm²)	[19]
Sn:Ga₂O₃/GaN	1.8 × 10⁻¹¹ (0 V)	≈10⁴ (0 V, 1000 µW/cm²)	[22]
Ga₂O₃	70 (20 V)	45 (20 V)	[23]
Nanoporous-GaN/Ga₂O₃	2.8 × 10⁻⁵ (5 V)	39.28 (5 V, 2.44 µW/cm²)	[24]
Ni/Ga₂O₃/GaN	1.9 × 10⁻¹¹ (10 V)	1.46 × 10⁶ (10 V, 435 µW/cm²)	This work^a

Material	Rise and Decay Time (s)	Method	References
Ga₂O₃	2.97/0.41 (10 V)	MBE^a	[30]
Ga₂O₃	5.0/10.3 (20 V)	MBE	[23]
Ga₂O₃	0.41/0.04 (10 V)	MBE	[31]
SiC/Ga₂O₃	0.65/0.04 (5 V)	MOCVD	[10]
Ga₂O₃	0.58/1.2 (10 V)	MOCVD	[32]
Ga₂O₃/GaN	0.14/0.16 (2 V)	MOCVD	[21]
Nanoporous-GaN/Ga₂O₃	1.09/0.79 (10 V)	MBE	[24]
Ni/Ga₂O₃/GaN	0.213/0.027 (6 V)	MOCVD	This work

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Optics Letters