Abstract

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga³⁺/Pr³⁺ co-doped BaTiO₃ ultra-thin film epitaxially grown on a [Pb(Mg_1/3Nb_2/3)O₃]_0.7-[PbTiO₃]_0.3 single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O²⁻ at the O2p orbital in the valence band and Pr³⁺ with injected holes by the ferroelectric gating effect promotes the formation of excited state O⁻, Pr⁴⁺, or Pr^3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on.

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