Abstract

We demonstrate a deep-red-emitting vertical external-cavity surface-emitting laser (VECSEL) with an emission wavelength around λ = 765 nm based on InGaAsP/GaInP quantum wells. The quaternary material system was characterized with x-ray diffraction of thin films as the basis for InGaAsP quantum wells, which are incorporated into an 11 × 1 quantum well active region. The surface morphology of the fabricated VECSEL structure is analyzed with atomic force microscopy and the laser is evaluated in a linear cavity for various heatsink temperatures resulting in a watt-level output power of P_max,−15°C = 1.71 W in a fundamental transverse mode.

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