Abstract
We propose a simple thin-layer structure based on epsilon-near-zero mode field enhancement to achieve optical bistability in the near-infrared band. The high transmittance provided by the thin-layer structure and the electric field energy limited in the ultra-thin epsilon-near-zero material means that the interaction between the input light and the epsilon-near-zero material can be greatly enhanced, creating favorable conditions for the realization of optical bistability in near-infrared band. The optical bistability hysteresis curve is closely related to the incident angle of light and the thickness of epsilon-near-zero material. This structure is relatively simple and easy to prepare, so we believe that this scheme will have a positive effect on the practicality of optical bistability devices in all-optical devices and networks.
© 2023 Optica Publishing Group
Full Article | PDF ArticleMore Like This
Rui Wang, Futai Hu, Yuan Meng, Mali Gong, and Qiang Liu
Opt. Lett. 48(6) 1371-1374 (2023)
Mahmoud A. A. Abouelatta, Akbar Safari, M. Zahirul Alam, Xavier Garcia-Santiago, Dominik Beutel, Lin Cheng, Robert W. Boyd, Carsten Rockstuhl, and Rasoul Alaee
Opt. Lett. 48(3) 783-786 (2023)
V. B. Novikov and T. V. Murzina
Opt. Lett. 48(8) 2134-2137 (2023)