Abstract

In this work, high-performance GeSn photodetectors with a Sn content gradient GeSn layer were fabricated on SOI substrate by CMOS-compatible process for C and L band telecommunication. The active GeSn layer has a Sn component increased from 9 to 10.7% with the controlled relaxation degree up to 84%. The responsivities of GeSn detectors at 1550 nm and 1630 nm are 0.47 A/W and 0.32 A/W under –4 V bias, respectively. Over 50 GHz 3 dB bandwidth with the eye pattern about 70 Gb/s was also evidenced at 1630 nm. These results indicate that the GeSn photodetectors have a promising application for extending the silicon photonics from C band to L band.

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