Abstract

Photonic integrated circuits play a vital role in enabling terahertz (THz) applications that require multi-octave bandwidth. Prior research has been limited in bandwidth due to rectangular waveguide (WRs) interconnects, which can only support single octave at low loss. To overcome this fundamental limitation, we exploit the ultra-wideband (UWB) near-field coupling between planar waveguides and silicon (Si)-based subwavelength dielectric rod waveguides (DRWs) to interconnect THz bandwidth uni-traveling-carrier photodiodes (UTC-PDs) at 0.08–1.03 THz. In a proof-of-concept experiment, the on-chip integrated UTC-PDs demonstrate a UWB operation from 0.1 THz to 0.4 THz. Furthermore, by employing Si DRWs as probes, multi-octave device-under-test characterization of UTC-PDs integrated with UWB transition is enabled with only one DRW probe. The proposed UWB interconnect technology is distinct from previously used WR-based ground-signal-ground probes or quasi-optical free-space coupling since it can provide multi-octave bandwidth and enable on-chip THz circuit integration.

© 2023 Optica Publishing Group

Multi-octave mid-infrared supercontinuum generation in tapered chalcogenide-glass rods

Esteban Serrano, Damien Bailleul, Frédéric Désévédavy, Grégory Gadret, Pierre Mathey, Pierre Béjot, Asuka Nakatani, Tonglei Cheng, Yasutake Ohishi, Bertrand Kibler, and Frédéric Smektala
Opt. Lett. 48(21) 5479-5482 (2023)

High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3.4 band

Marcel Grzeslo, Sebastian Dülme, Simone Clochiatti, Tom Neerfeld, Thomas Haddad, Peng Lu, Jonas Tebart, Sumer Makhlouf, Carlos Biurrun-Quel, José Luis Fernández Estévez, Jörg Lackmann, Nils Weimann, and Andreas Stöhr
Opt. Express 31(4) 6484-6498 (2023)

High-power UTC-photodiodes for an optically pumped subharmonic terahertz receiver

Sumer Makhlouf, Javier Martinez-Gil, Marcel Grzeslo, Diego Moro-Melgar, Oleg Cojocari, and Andreas Stöhr
Opt. Express 30(24) 43798-43814 (2022)

Heterogeneous integration of a GaN-based photonic integrated circuit with an Si-based transimpedance amplifier

X. Ma, Y. F. Cheung, H. Lyu, and H. W. Choi
Opt. Lett. 48(5) 1124-1127 (2023)

Widely tunable 2 µm hybrid laser using GaSb semiconductor optical amplifiers and a Si₃N₄ photonics integrated reflector

Nouman Zia, Samu-Pekka Ojanen, Jukka Viheriala, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, and Mircea Guina
Opt. Lett. 48(5) 1319-1322 (2023)