Subwavelength structure engineered passband filter for the 2-&#x00B5;m wave band

Wenchang He; Yuhan Sun; Peiji Zhou; Lipeng Xia; Ting Li; Qiyuan Yi; Li Shen; Li Shen; Zhenzhou Cheng; Zhenzhou Cheng; Yi Zou

doi:10.1364/OL.481426

Optics Letters
Vol. 48,
Issue 3,
pp. 827-830
(2023)
•https://doi.org/10.1364/OL.481426

Subwavelength structure engineered passband filter for the 2-µm wave band

Wenchang He, Yuhan Sun, Peiji Zhou, Lipeng Xia, Ting Li, Qiyuan Yi, Li Shen, Zhenzhou Cheng, and Yi Zou

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Wenchang He, Yuhan Sun, Peiji Zhou, Lipeng Xia, Ting Li, Qiyuan Yi, Li Shen, Zhenzhou Cheng, and Yi Zou, "Subwavelength structure engineered passband filter for the 2-µm wave band," Opt. Lett. 48, 827-830 (2023)

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- Integrated Optics
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About this Article
History
- Original Manuscript: November 21, 2022
- Revised Manuscript: December 27, 2022
- Manuscript Accepted: December 27, 2022
- Published: January 31, 2023

Abstract

In this work, we experimentally demonstrate a passband filter for the 2-µm wave band on the silicon-on-insulator platform. The device consists of a strip waveguide and an apodized subwavelength-structured waveguide. Fabricated on a 340-nm-thick silicon membrane, the proposed passband filter shows a 3-dB bandwidth of 16–33 nm, a high sidelobe suppression ratio (SLSR) of 24 dB, and a low insertion loss (IL) of 0.4 dB.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Device/Performance	220 nm SOI	340 nm SOI	Simu. or Exp.^a
GC/Coupling Efficiency	−8.4 dB [4], −7.9 dB [11]	−6.5 dB [6]	Exp.
MRR/Q Factor	1520 [4]	11200 [6]	Exp.
MMI Splitter/Insertion Loss	3.03 $\pm 0.43$ dB [11]	0.29 $\pm$ 0.01 dB [9]	Exp.
MZM/Loss	7.07 dB/cm@4 V [5]	5.17 dB/cm@4 V [5]	Sim.
MZM/ Modulation Efficiency	$3.17 V \cdot cm$ @4 V [5]	$2.86 V \cdot cm$ @ 4 V [5]	Sim.

Ref.	Si Layer Thickness (nm)	SLSR (dB)	IL (dB)	BW (nm)
[4]	220	>20^a	∼2.5	∼2 (3 dB)
[16]	220	>20	1	6–26 (0.5 dB)
This Work	340	24	<0.5	16–33 (3 dB)

Device/Performance	220 nm SOI	340 nm SOI	Simu. or Exp.^a
GC/Coupling Efficiency	−8.4 dB [4], −7.9 dB [11]	−6.5 dB [6]	Exp.
MRR/Q Factor	1520 [4]	11200 [6]	Exp.
MMI Splitter/Insertion Loss	3.03 $\pm 0.43$ dB [11]	0.29 $\pm$ 0.01 dB [9]	Exp.
MZM/Loss	7.07 dB/cm@4 V [5]	5.17 dB/cm@4 V [5]	Sim.
MZM/ Modulation Efficiency	$3.17 V \cdot cm$ @4 V [5]	$2.86 V \cdot cm$ @ 4 V [5]	Sim.

Ref.	Si Layer Thickness (nm)	SLSR (dB)	IL (dB)	BW (nm)
[4]	220	>20^a	∼2.5	∼2 (3 dB)
[16]	220	>20	1	6–26 (0.5 dB)
This Work	340	24	<0.5	16–33 (3 dB)

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Optics Letters