Abstract

We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic–photonic integrated circuits (EPICs) operating at telecommunication wavelengths. The GeOI samples were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge active layer was achieved. Planar lateral p-i-n WGPDs were fabricated and characterized, and they exhibited a low dark current of 0.1 µA. Strain-induced alterations in the optical properties were observed, resulting in an extended photodetection range up to λ = 1638 nm. This range encompasses crucial telecommunication bands. The WGPDs exhibited a high responsivity of 0.56 A/W and a high detectivity of ${D^\mathrm{\ast }}\textrm{ = 1}\mathrm{.87\ \times 1}{\textrm{0}^\textrm{9}}\textrm{cmH}{\textrm{z}^{\textrm{1/2}}}{\textrm{W}^{\textrm{ - 1}}}$ at 1550 nm. A frequency-response analysis revealed that increasing the bias voltage from −1 to −9 V enhances the 3-dB bandwidth from 31 to 49 MHz. This study offers a comprehensive understanding of GeOI WGPDs, fostering high-performance EPICs with implications for telecommunications and beyond.

© 2024 Optica Publishing Group

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