Abstract

Temperature characteristics of GaN-based laser diodes are investigated. It is noted that the characteristic temperature of the threshold current (T₀) decreases with decreasing lasing wavelength for GaN-based LDs. The performance deteriorates seriously for UV LDs at high temperature. It is ascribed to the increase of carriers escaping from quantum wells due to the lower potential barrier height. In this Letter, AlGaN is used as the barrier layer in UV LDs instead of GaN to improve the temperature characteristic of the threshold current and slope efficiency by increasing the potential barrier height of quantum wells. Based on this structure, a high output power of 4.6 W is obtained at the injection current of 3.8 A; its lasing wavelength is 386.8 nm.

© 2024 Optica Publishing Group

Room temperature continuous-wave operated 2.0-W GaN-based ultraviolet laser diodes

Jing Yang, De-Gang Zhao, Zong-Shun Liu, Baibin Wang, Yu-Heng Zhang, Zhen-Zhuo Zhang, Ping Chen, and Feng Liang
Opt. Lett. 47(7) 1666-1668 (2022)

Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region

J. Yang, D. G. Zhao, D. S. Jiang, X. Li, F. Liang, P. Chen, J. J. Zhu, Z. S. Liu, S. T. Liu, L. Q. Zhang, and M. Li
Opt. Express 25(9) 9595-9602 (2017)

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

Hung-Ming Chang, Wei-Chih Lai, Wei-Shou Chen, and Shoou-Jinn Chang
Opt. Express 23(7) A337-A345 (2015)

Low-threshold AlGaN-based deep ultraviolet laser enabled by a nanoporous cladding layer

Yongming Zhao, Liqiong Deng, Feng Wu, Zhihua Zheng, Pengcheng Jian, Weijie Liu, Zhenyu Chen, Shizhou Tan, Meng Peng, Wei Guo, Changqing Chen, and Jiangnan Dai
Opt. Lett. 49(4) 1061-1064 (2024)

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes

Ziqi Zhang, Qianxi Zhou, Xu Liu, Zhenxing Lv, Bin Tang, Hansong Geng, Shengli Qi, and Shengjun Zhou
Opt. Lett. 49(8) 2049-2052 (2024)