Abstract

In this paper, we present a novel, to our knowledge, method for the fabrication of slotted surface gratings for buried heterostructure (BH) lasers. In the device fabrication process, SiO₂ strips needed for InP current blocking layer growth are reused for the formation of slot grating pattern masks. In the following growth of the p-InP cladding layer, because the slot areas are covered by SiO₂, the InP material is grown selectively in only the areas outside the slot areas, forming slots of the surface gratings in the p-InP layer at the same time as the cladding layer growth. Single longitude mode BH lasers having slotted surface gratings have been fabricated successfully, and the spectra show higher than 40 dB side mode suppression ratio (SMSR). The adoption of the method helps to simply the device fabrication and thus lower the device fabrication cost notably.

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