Design and demonstration of high efficiency perfectly vertical grating couplers with a random structure

Xin Jin; Xin Jin; Jinbin Xu; Jinbin Xu; Cuiwei Xue; Chenxing Guo; Liucheng Fu; Min Liu; Yunliang Shen; Xueling Quan; Xiulan Cheng

doi:10.1364/OL.519489

Optics Letters
Vol. 49,
Issue 7,
pp. 1856-1859
(2024)
•https://doi.org/10.1364/OL.519489

Design and demonstration of high efficiency perfectly vertical grating couplers with a random structure

Xin Jin, Jinbin Xu, Cuiwei Xue, Chenxing Guo, Liucheng Fu, Min Liu, Yunliang Shen, Xueling Quan, and Xiulan Cheng

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Xin Jin, Jinbin Xu, Cuiwei Xue, Chenxing Guo, Liucheng Fu, Min Liu, Yunliang Shen, Xueling Quan, and Xiulan Cheng, "Design and demonstration of high efficiency perfectly vertical grating couplers with a random structure," Opt. Lett. 49, 1856-1859 (2024)

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Abstract

Utilizing an automated optimization method, we propose a perfectly vertical grating coupler (PVGC) characterized by random structure, superior performance, simplified fabrication process, and increased minimum feature size (MFS). Within the range of MFS from 60 to 180 nm, the optimized PVGC exhibited a simulated coupling efficiency of approximately −2.0 dB at 1550 nm with a 34 nm 1-dB bandwidth. Experimental results for the PVGCs fabricated by electron beam lithography (EBL) demonstrated coupling efficiencies ranging from −2.5 to −2.8 dB with a 32 nm 1-dB bandwidth while maintaining high manufacturing tolerances. This represents the most outstanding experimental outcome to date regarding the coupling performance of a PVGC fabricated on a 220 nm silicon on insulator (SOI), without requiring any complex processes as reported in the existing literature.

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Supplementary Material (1)

Name	Description
Supplement 1	Further elucidation on design parameters for PVGCs with varying feature sizes.

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Data underlying the results presented in this paper are not currently publicly available but may be obtained from the authors upon reasonable request.

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Ref	SOI	Structure	Band	MFS	Sim CE	Process	Exp CE
[1]	220 nm	Dual layers etch	C	130 nm	−1.55 dB	/	/
[3]	220 nm	BBGC	C	57 nm	−1.78 dB	EBL	−3.69 dB
[6]	220 nm	Polysilicon overlayer	C	206 nm	−2.07 dB	193 nm DUV	−2.68 dB
[9]	220 nm	Blazed & dual-etch	C	40 nm	−0.6 dB	EBL	−1.49 dB
[10]	220 nm	Improved L-shaped	C	130 nm	−1.74 dB	/	/
[11]	220 nm	Multilayers etch	C	200 nm	−2.4 dB	248 nm DUV	−4.2 dB
[12]	220 nm	Apodized structure	C	100 nm	−3.0 dB	EBL	−5.86 dB
This work	220 nm	Random structure	C	60 nm	−1.99 dB	EBL	−2.53 dB
				100 nm	−2.01 dB		−2.66 dB
				130 nm	−2.02 dB		−2.6 dB
				160 nm	−2.07 dB		−2.69 dB
				180 nm	−2.14 dB		−2.8 dB

Abstract

Supplementary Material (1)

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Optics Letters