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Threshold currents for GaInAsP lasers emitting at 1.55 μm

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Abstract

An analysis of the threshold current for double-heterostructure GaInAsP lasers is presented. The analysis is based on a simple expression for the gain–current relation and includes the effect of optical confinement. Using a refractive-index model for GaInAsP compounds, lasers emitting at 1.55 μm are investigated. Asymmetrical structures, i.e., lasers with different n- and p-confinement layers, are considered.

© 1980 Optical Society of America

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Equations (14)

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