1 January 2022, Volume 10, Issue 1, pp. 1-268;
Feat. pp: A1–A13
33 articles
Sort:
The GeSn double heterostructure laser diode generates the laser beam. With the GeSn active region, this laser is composited by the all-group-IV semiconductor and alloy (namely Si, Ge, GeSn, and SiGeSn), enabling the monolithic integration of lasers on the Si platform. See Y. Zhou et al., pp. 222–229.