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Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain: erratum

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Abstract

This erratum corrects typos that appeared in Photon. Res. 8, 127 (2020) [CrossRef]   in the text, a figure showing the experimental setup, and a table listing the absorption and emission cross section values used in simulations.

© 2020 Chinese Laser Press

The authors wish to correct some typos in Ref. [1]. The corrections are as follows.

  • 1. On page 128, paragraph 3 the word “non-negligible,” should instead just be “negligible.”
  • 2. In Fig. 2(a) of the optical measurement setup a pump diode was incorrectly labeled to be a 1480 nm wavelength, instead of the correct 1470 nm wavelength. Mentions in the text used the correct 1470 nm wavelength value.
  • 3. On page 131 the reference to Fig. 2(a) for the erbium absorption cross section should instead be a reference to Fig. 3(a).
  • 4. The emission and absorption cross section values given in Table 1 and in the text on page 131 were given on the order of 1020cm2, as opposed to 1021cm2. The correct 1021cm2 values were used in the simulations.

 figure: Fig. 2.

Fig. 2. Diagram of the double-side pumping setup used to measure gain on the TeO2:Er3+-coated Si3N4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.

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Tables Icon

Table 1. Parameters Used for TeO2:Er3+ Rate Equation Model

REFERENCES

1. H. C. Frankis, H. M. Mbonde, D. B. Bonneville, C. Zhang, R. Mateman, A. Leinse, and J. D. B. Bradley, “Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain,” Photon. Res. 8, 127–134 (2020). [CrossRef]  

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Figures (1)

Fig. 2.
Fig. 2. Diagram of the double-side pumping setup used to measure gain on the TeO 2 : Er 3 + -coated Si 3 N 4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.

Tables (1)

Tables Icon

Table 1. Parameters Used for TeO 2 : Er 3 + Rate Equation Model

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