Recent research has led to the fabrication of a single-mode InGaAsP/InP buried heterostructure (BH) laser with high-order slotted surface gratings. This development represents an important step forward in the field of semiconductor lasers, introducing a method that streamlines the fabrication process while maintaining, and in certain aspects enhancing, laser performance. The key findings of this study include the laser's robust single-mode emission performance, with a side-mode suppression ratio (SMSR) of over 30 dB within a current range of 200 to 400 mA. Additionally, the research quantifies the laser's linewidths—identifying Gaussian and Lorentzian linewidths at 1500 and 550 kHz, respectively—thereby highlighting the laser's spectral precision. This work is distinguished by its application of high-order slotted surface gratings to simplify the manufacturing of single-mode BH lasers, effectively reducing costs and facilitating broader access to high-quality lasers for a range of applications. The implications of this research extend beyond the immediate improvements in laser fabrication, offering potential advancements in optical communications, laser sensing, and the integration of light sources on silicon photonic chips as well.

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