This paper studies a germanium-on-silicon photodiode architecture that enables operation at extremely high speeds while achieving a high efficiency. It uses a silicon nitride waveguide that runs parallel to the germanium absorption region and ensures a uniform distribution of the photo-generated carriers. The authors present a detailed study of the structure parameters, that gives rise to an almost two-fold increase in the responsivity of the photodetector. Using this optimised structure, they subsequently demonstrate the detection of signals operating at a transmission rate of up to 180 Gbit/s.
This is a significant result that feeds further the race for the fastest components on chip. Exceptional as these results may be, one can be sure that this race does not end here!
05/05/2022 5:22 AM
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