New technologies rely on nanoelectronics, focusing more attention on innovative techniques using extreme ultraviolet light (EUV) and thin films to enable higher-performance, more energy-efficient, and lower-cost chips. In this context, the determination of optical properties down to the EUV range at wavelengths in the 10 nm to 20 nm range is essential in the fabrication of new nanomaterials for the semiconductor industry. However, the continuous increase in the complexity of functional nanostructures poses a challenge in an accurate and reliable determination of their optical constants. The current data quality is insufficient in the EUV range, where most reported values are calculated or estimated.

In order to provide accurate optical constants, the authors of this manuscript report on EUV reflection measurements of thin films consisting of metals, alloys and composites, and the analysis of the obtained spectra with a model including nanoscale imperfections such as roughness and interdiffusion. This work contributes to the expansion of the literature database of optical constants for a wide range of materials relevant in EUV lithography applications, and thus could lead to the development of new nanomaterials in the field of nanoelectronics.

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