A novel approach to realize efficient InGaN red light emitters for LEDs is demonstrated using nanowires grown by molecular beam epitaxy. The III-nitride InGaN material system is appealing for LEDs, because its emission wavelength can cover the entire visible light spectrum, by incorporating different indium compositions into the active region. Yet, achieving efficient long wavelength emission in red color remains challenging. In this context, this work employs nanowire structures and selective area growth to mitigate the impacts of strain and sidewall damage, which are considered as the main factors causing the low efficiency in the III-nitride long wavelength light emission. These nanowire red emitters are integrated in a device with dimensions of 800 nm, showing a peak external quantum efficiency of 2.2%, yet without device packaging. These are promising results for the development of micro-LEDs needed for applications requiring miniaturized light sources.

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