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Temperature dependence of impact ionization in InAs: erratum

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Abstract

In our publication [Opt. Express , 21, 8630-8637 (2013)] , there was an error in the labelling of the axis on Fig. 5, showing the electric field dependence of the electron ionization coefficient. Here we present the corrected figure.

© 2014 Optical Society of America

In our paper [1], an Analytical Band Monte Carlo Model (ABMC) was used to investigate the temperature dependence of impact ionization in InAs. In Fig. 5 of the paper we plotted the electric field dependence of the electron ionization coefficient, we have recently discovered an error in this figure as the vertical and horizontal axis should be in units of m−1 and m/V respectively and not cm−1 and cm/V as shown. The corrected figure is shown below (Fig. 1 ). The relevant discussion of this result in the paper [1] is still valid, with the quoted figures and previous referenced results agreeing with the corrected figure.

 figure: Fig. 1

Fig. 1 InAs electron ionization coefficient versus reciprocal electric field at 300 and 77 K. Results obtained using large electron effective mass are shown in dashed line.

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References and links

1. I. C. Sandall, J. S. Ng, S. Xie, P. J. Ker, and C. H. Tan, “Temperature dependence of impact ionization in InAs,” Opt. Express 21(7), 8630–8637 (2013). [CrossRef]   [PubMed]  

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Figures (1)

Fig. 1
Fig. 1 InAs electron ionization coefficient versus reciprocal electric field at 300 and 77 K. Results obtained using large electron effective mass are shown in dashed line.
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