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High-efficiency Si optical modulator using Cu travelling-wave electrode

Yan Yang, Qing Fang, Mingbin Yu, Xiaoguang Tu, Rusli Rusli, and Guo-Qiang Lo

Open Access Open Access

Abstract

We demonstrate a high-efficiency and CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator with Cu traveling-wave electrode and doping compensation. The measured electro-optic bandwidth at Vbias = −5 V is above 30 GHz when it is operated at 1550 nm. At a data rate of 50 Gbps, the dynamic extinction ratio is more than 7 dB. The phase shifter is composed of a 3 mm-long reverse-biased PN junction with modulation efficiency (Vπ·Lπ) of ~18.5 V·mm. Such a Cu-photonics technology provides an attractive potentiality for integration development of silicon photonics and CMOS circuits on SOI wafer in the future.

© 2014 Optical Society of America

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Figures (7)
Fig. 1
Fig. 1 Microscope image of the MZI silicon optical modulator. Inset (a): implantation schematic diagram of the phase shifter (not to scale). Inset (b): latticed Cu surface pattern.

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Fig. 2
Fig. 2 Simulated insertion loss S21 (a) and return loss S11 (b) of the normal Cu traveling-wave electrode, the latticed Cu traveling-wave electrode and the normal Al traveling-wave electrode.

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Fig. 3
Fig. 3 SEM images of modulator waveguide. Output part of the modulator (a). Ridge waveguide of the phase shifter (b). 1 × 2 MMI combiner/splitter (c).

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Fig. 4
Fig. 4 Images of Cu electrode. SEM image of the top view of the Cu electrode (a). TEM image of the phase shifter at the A-A' line (b). Inset: TEM image of the silicon ridge waveguide.

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Fig. 5
Fig. 5 EE S21 of the latticed Cu traveling-wave electrode (a), Cu-induced waveguide propagation loss (b).

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Fig. 6
Fig. 6 Output spectra of silicon modulator with 3 mm-long phase shifter (a), Inset: dynamic insertion loss. Phase shift and efficiency VπLπ of the phase shifter under different applied reversed voltages of the 3 mm-long phase shifter (b).

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Fig. 7
Fig. 7 The EO bandwidth of the silicon modulator (a) and eye diagram of the silicon modulator (b).

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Tables (2)

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Table 1 Sheet Resistance of Cu and Al, and Cu-to-Si Contact Resistivity

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Table 2 Comparison to Other MZI Modulators with Traveling-wave Electrode

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