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Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation

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Abstract

An investigation of Tm-Ho energy transfer in Tm(5at.%),Ho(0.4at.%):KYW single crystal by two independent techiques was performed. Based on fluorescence dynamics measurements, energy transfer parameters P71 and P28 for direct (Tm→Ho) and back (Ho→Tm) transfers, respectively, as well as equilibrium constant Θ were evaluated. The obtained results were supported by calculation of microscopic interaction parameters according to the Förster-Dexter theory for a dipole-dipole interaction. Diode-pumped continuous-wave operation of Tm,Ho:KYW microchip laser was demonstrated, for the first time to our knowledge. Maximum output power of 77 mW at 2070 nm was achieved at the fundamental TEM00 mode.

© 2016 Optical Society of America

1. Introduction

Tm-sensitized Ho materials are considered to be among the most attractive solutions for lasers operating at wavelength slightly above 2 μm particularly when compact cavity design is required [1]. Tm3+ ions possess strong absorption near 800 nm where commercially available AlGaAs laser diodes operate. Two-for-one quantum efficiency caused by cross-relaxation process in thulium, and subsequent non-radiative energy transfer to Ho3+ ions enable efficient population of holmium 5I7 manifold [2]. When in addition microchip cavity design is implemented the final laser source looks particularly compact and attractive for applications. Laser generation in microchip configuration has been achieved earlier with several Tm,Ho-codoped crystals such as: YAG [3], YLF [4–6], YVO4 [7], GdVO4 [8], YAP [9] and KLuW [10]. It was shown that Tm,Ho materials can be successfully used for obtaining laser radiation on holmium transition in such compact laser design. Recently efficient continuous-wave [11] and femtosecond pulse [12] laser operation has been reported using Tm,Ho:KY(WO4)2 (Tm,Ho:KYW) crystal under Ti-sapphire laser pumping. These results showed KYW crystal as an attractive host material for 2 μm lasers. There a description of the crystal growth, structure, spectroscopic properties and first results of evaluation of energy transfer parameters were presented. However energy transfer processes were studied incompletely and laser operation under diode-pumping was not obtained. Thus in this paper an investigation of Tm-Ho energy transfer parameters in KYW crystal by two independent techniques was undertaken and, for the first time to our knowledge, continuous-wave laser operation using this crystal in a microchip cavity configuration under diode laser pumping was demonstrated.

2. Study of energy transfer by fluorescence dynamics measurement

The study of energy transfer processes in Tm(5%),Ho(0.4%):KYW single crystal was implemented with an approach earlier described by B.M. Walsh in application to Tm,Ho-codoped YAG and YLF crystals [13,14]. According to this approach energy transfer parameters could be easily evaluated by fitting experimental data on fluorescence dynamics from 3F4 energy level of Tm3+ ions and from 5I7 level of Ho3+ ions to the solutions of rate equations set describing rates of change of energy levels population. Inspite the fact that this approach doesn’t take into consideration up-conversion processes in the ions and can be used only at low excitation densities it was important to find the parameters earlier calculated for other Tm,Ho-codoped crystals to compare them and to understand place of KYW crystal among other host materials.

In our experiment OPO based on β-BaB2O4 crystal and pumped by the third harmonic of actively Q-switched Nd:YAG laser was used as an excitation source of Tm and Ho fluorescence. The pulses had duration of 20 ns and repetition rate of 10 Hz. The fluorescence was collected by wide-aperture objective on entrance slit of monochromator MDR-12. The signal was detected by InGaAs photodetecor and processed by a digital oscilloscope with 500 MHz bandwidth. To eliminate influence of reabsorption on fluorescence dynamics a small piece of the crystal was grinded to crystalline powder and diluted by liquid silicone forming homogeneous suspension which then was used as the sample. Pulsed radiation at 1670 nm was used to selectively excite Tm3+ ions to 3F4 energy level, while the wavelength was changed to 1960 nm for excitation of Ho3+ ions to 5I7 energy manifold. The fluorescence dynamics were measured separately for Tm3+ ions at 1860 nm and for Ho3+ ions at 2056 nm. All the measurements were carried out at room temperature. The energy level transitions corresponding to absorption and emission wavelengths used in the experiment are shown in Fig. 1.

 figure: Fig. 1

Fig. 1 Energy level transitions in Tm3+ and Ho3+ ions corresponding to absorption and fluorescence wavelengths used in the experiment.

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The measured fluorescence dynamics of Tm(5at.%),Ho(0.4at.%):KYW single crystal are shown in Fig. 2.

 figure: Fig. 2

Fig. 2 Fluorescence dynamics of Tm(5at.%),Ho(0.4at.%):KY(WO4)2 crystal from 3F4 manifold of Tm3+ ions (a) and from 5I7 manifold of Ho3+ ions (b) under excitation of thulium at 1670 nm as well as from 5I7 manifold of Ho3+ ions (c) and 3F4 manifold of Tm3+ ions (d) under excitation of holmium at 1960 nm.

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After Tm3+ ions excitation at 1670 nm fast decay of thulium fluorescence at 1860 nm is observed at early times (Fig. 2(a)) with simultaneous growth of fluorescence of holmium at 2056 nm (Fig. 2(b)). This behaviour results from direct energy transfer from Tm3+ to Ho3+ ions, where fast decrease of 3F4 energy level population of Tm3+ accompanied by an increase of 5I7 level population of Ho3+. At later times fluorescence from both ions starts to decay exponentially with the same time constant, which was estimated to be 2.4 ms. This can be explained by the fact that growth of 5I7 holmium population intensifies back energy transfer from Ho3+ to Tm3+ ions and quickly brings the ions to the state of thermodynamic equilibrium when populations of 3F4 level of thulium and 5I7 of holmium are determined by Boltzmann statistics as for a coupled system. It should be mentiond that this behavior is typical for Tm-Ho co-doped media [13]. Similar behaviour is observed when Ho3+ ions are excited at 1960 nm. Fast decay of holmium fluorescence at 2056 nm at early times (Fig. 2(c)) goes along with simultaneous growth of thulium fluorescence at 1860 nm (Fig. 2(d)), that is a consequence of back energy transfer from Ho3+ to Tm3+ ions. At later times fluorescence from both ions in similar manner exponentially decays with the same time constant, which in this case was estimated to be 2.7 ms. This behaviour denotes setting of thermodynamic equilibrium between ions.

The experimental curves were then fitted by the solutions of rate equations set governing the rate of change of populations in Tm3+ 3F4 and Ho 5I7 manifolds [14] in case of thulium excitation:

n2(t)n2(0)=(βα+β)exp(tτ)+(αα+β)exp((α+β)t),
n7(t)n2(0)=(αα+β)exp(tτ)(αα+β)exp((α+β)t),
and in case of holmium excitation:

n7(t)n7(0)=(αα+β)exp(tτ)+(βα+β)exp((α+β)t),
n2(t)n2(0)=(βα+β)exp(tτ)(βα+β)exp((α+β)t).

Here the subscripts 1, 2, 7, and 8 denote the Tm 3H6, Tm 3F4, Ho 5I7, and Ho 5I8 manifolds, respectively (see Fig. 1). This indexing of the levels earlier was introduced by Barnes [15] and is used through this paper to get an agreement with the results obtained with other hosts. ni is a population of i level, where i = 2, 7; τ is the time constant of exponential decay, α, β are the parameters determining direct and back energy transfer, respectively, which intrinsically are energy transfer probabilities with units of s−1. These parameters are concentration dependent. However if they are devided to concentration of corresponding ions the obtained values will be energy transfer parameters [13]: P28 = α/NHo and P71 = β/NTm, which are concentration independent and characterize host material itself. NHo and NTm are the holmium and the thulium concentrations. P28 and P71 are the energy transfer parameters for direct and back energy transfer, respectively, with units of cm3/s.

The best fitting for all experimental data both in case of thulium and holmium excitation was obtained with the same values of energy transfer probabilities: α = 7000 s−1 and β = 6100 s−1. The energy transfer parameters P28 and P71 were calculated to be 2.74 × 10−16 cm3/s and 0.19 × 10−16 cm3/s, respectively. We aslo found the ratio P71/P28, called equilibrium constant Θ [13]. In our case this value was estimated to be 0.069. The obtained results were tabulated in Table 1 in comparison with the data reported for other Tm,Ho-codoped laser crystals.

Tables Icon

Table 1. Energy transfer parameters in Tm,Ho-codoped KYW crystal compared to other host materials at room temperature

The Table 1 demostrates that Tm,Ho:KYW crystal possesses the lowest equilibrium constant among other host materials with a significantly higher value of direct energy transfer parameter P28. This shows KYW host material as a very promising candidate for Tm,Ho-codoping, which provides favourable conditions for direct energy transfer with regards to back transfer.

Assuming that all the exitation resides in the 3F4 energy level of thulium and 5I7 level of holimium we have also calculated a fraction of Ho3+ ion residing in the 5I7 level at thermal equilibrium, fHo = α/(α + β) [14]. The obtained value was to be 53.4%, which shows that more than a half of excitation energy in Tm(5at.%),Ho(0.4at.%):KYW crystal at low excitation densities transfers to Ho3+ ions. Additionaly we found the value of fHo after increasing of holmium concentration up to 1 at. % with unchanged thulium concentration. The result was to be 74.2%. Further increase of holmium content up to 2 at.% leads to fHo = 85.2%. So Tm,Ho:KYW crystals with higher doping level of holmium could be of interest for future investigation.

Fluorescence dynamics of Tm,Ho:KYW single crystal were also measured under excitation of thulium ions at 802 nm to higher laying 3H4 energy manifold. The obtained results are shown in Fig. 3.

 figure: Fig. 3

Fig. 3 Fluorescence dynamics of Tm and Ho ions in KYW single crystal under excitation of thulium at 802 nm at early times (a) and at later times (b).

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Fast growth of thulium fluorescence notable at early times is attributed to cross-relaxation process in Tm3+ ions, leading to population of 3F4 energy manifold. The time constant of this process was evaluated to be 6.5 μs. The further behavior of fluorescence is similar to the case of thulium 3F4 excitation with setting of thermodynamic equilibrium at later times (Fig. 3(b)).

3. Energy transfer microparameters according to the Förster-Dexter theory

To support the results obtained from fluorescence dynamics measurement we calculated microscopic interaction parameters for our Tm,Ho:KYW single crystal according to Förster-Dexter theory of resonant energy transfer [18]. According to the theory microparameters of energy transfer from donor (D) to acceptor (A) ions cD→A can be calculated with the expression:

cDA=9cχ216π4n2σDem(λ)σAabs(λ)dλ.

Here c is the velocity of light in vacuum, n – refractive index of the crystal, σDem – emission cross-section of donor ion, σAabs – absorption cross-section of acceptor ion, χ2 is a factor describing the relative orientation in space of the transition dipoles of the donor and acceptor. When the relative orientation of donors and acceptors in a medium is random, but fixed and do not change during excited state lifetime of the ions, as it is in case of crystalline matrix, the orientation factor χ2 can be taken as 0.476 [19,20].

So the value of microparameter cD→A according to Förster-Dexter theory is basically determined by the overlap of absorption and emission spectra of donor and acceptor ions. To calculate direct energy transfer microparameter cTm→Ho, one must have emission spectrum of Tm3+ ions and absorption spectrum of Ho3+ ions in KYW crystal. Whereas to calculate back energy transfer microparameter cHo→Tm, one must have emission spectrum of Ho3+ ions and absorption spectrum of Tm3+ ions in the crystal. The absorption spectra of the ions in KYW host where measured for singly doped crystals using spectrophotometer Cary 5000 at room temperature for polarization of light along principal axes Nm, Np and Ng of the crystals. The emission cross-section spectra where calculated for each polarization by reciprocity method.

Polarization averaged absorption and emission cross-section spectra of Tm3+ and Ho3+ ions in KYW crystal are shown in Fig. 4.

 figure: Fig. 4

Fig. 4 Thulium emission and holmium absorption (upper) and holmium emission and thulium absorption (lower) cross-section spectra in KYW single crystal.

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With Eq. (5) we calculated the values of interation microparameters for direct and back energy transfers: cTm→Ho = 35.1 × 10−40 cm6∙s−1 and cHo→Tm = 2.16 × 10−40 cm6∙s−1, respectively. The energy transfer probabilities for a dipole-dipole interaction can be found by dividing microparameter to the six power of the distance between interacting ions. So the ratio cHo→Tm/cTm→Ho will be equal to the ratio of energy transfer probabilities, which is analogous parameter to equilibrium constant Θ, that was calculated for this crystal from fluorescence dynamics measurements. After calculations cHo→Tm/cTm→Ho was found to be 0.061. This value is in a good agreement with the value of equilibrium constant (Θ = 0.069), that confirms the resuls of fluorescence dynamics analysis. The obtained results were tabulated in Table 2 in comparison with the data reported for other Tm,Ho-codoped hosts.

Tables Icon

Table 2. Energy transfer microparameters in Tm,Ho-codoped KYW crystal according to Förster-Dexter analysis compared to other host materials

One can see from the table that the energy transfer coefficient cTm→Ho for Tm,Ho:KYW crystal is higher than that for the most of the other laser hosts. Also KYW shows a low value of the ratio cHo→Tm/cTm→Ho that is lower than that observed in BNN (Ba2NaNb5O15), YAG (Y3Al5O12) and YLF (LiYF4), and slightly higher than for CaSGG (Ca3Sc2Ge3O12) and Gd3Ga5O12(Ca,Zr). However in these latter hosts, the value of the direct energy transfer process is much smaller than that of KYW.

4. Microchip laser experiment

To demonstrate a potential of Tm,Ho:KYW crystal for using in microchip laser devices we have carried out laser experiment with a laser diode (LD) as a pump source. Ng-cut Tm(5 at.%),Ho(0.4 at.%):KYW crystal with thickness of 2.98 mm was used as an active element. It was earlier shown that such orientation of the crystal is favorable for arising of positive thermal lens in the crystal that enables stability of plane-plane microchip cavity configuration [24]. The experimental setup of Tm,Ho:KYW laser is shown in Fig. 5.

 figure: Fig. 5

Fig. 5 Experimental setup of CW microchip laser.

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Fiber-coupled (Ø = 105 μm, N.A. = 0.15) AlGaAs laser diode with maximum available output power of 3 W at 802 nm and M2 = 20 was used as a pumping source. The diode wavelength was shifted to the absorption peak of the 3H4 level (Tm3+) by temperature tuning of LD. The laser diode radiation was collimated and focused into the active element to a spot of 120 μm diameter with two spherical lenses (f1 = 70mm, f2 = 80mm). The laser resonator was formed by two plane mirrors which were positioned in close proximity to the ends of the active element. The HR plane input mirror M1 was AR coated for pump radiation (802 nm). Two output couplers with transmission of 0.8 and 1.8% were used. The crystal faces were AR-coated for the pump (802 nm) and laser (2.07 μm) radiations as well. The lateral sides of the laser crystal were in thermal contact with the aluminum heat sink whose temperature was precisely maintained with a thermoelectric cooler which temperature was to be 16°С.

CW laser operation was relized at the fundamental TEM00 mode and lasing radiation was polarized along Np principal axis of the crystal. The laser performance characteristics are demonstrated in Fig. 6.

 figure: Fig. 6

Fig. 6 Input-output characteristics of Tm,Ho:KYW laser (a) and gain spectra of Ho3+ ions in KYW (b).

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The highest output power of 77 mW was obtained with 0.8% output coupler. The laser emission spectrum was centered at 2070 nm. This matches with a local maximum in the gain spectrum of Ho:KYW, see Fig. 6, dashed line represents losses (TOC = 0.8%). The corresponding slope efficiency of the laser with respect to incident pump power was estimated to be 8.5%. The laser threshold was about 0.8 W of incident pump power. The slope efficiency for output coupler TOC = 1.8% at low pump power was higher than 9%, however maximum output power was limited by 46 mW. In the last case the laser wavelength shifted to 2058 nm that is attributed to higher level of cavity losses. Nonlinear dependence of the output power with respect to incident pump power and visible fluorescence was observed during lasing. Roll-over in input-output characteristic with higher output coupler transmission value (1.8%) was evident at 1.4 W of incident pump power. Such behavior can be caused by the higher up-conversion losses which increase heat release in the crystal. It’s evident that higher transmission of the output coupler requires greater population inversion of the Ho3+ upper laser level 5I7 and this leads to increase in up-conversion losses in the Tm, Ho:KYW. Similar behavior of Tm,Ho-laser was observed in [11].

5. Conclusion

Energy transfer in Tm(5at.%),Ho(0.4at.%):KYW single crystal has been investigated by two independen techniques. With an analysis of fluorescence dynamics of the crystal concentration independent energy transfer parameters for direct P71 and back transfer P28 processes were determined, which were 2.74 × 10−16 cm3/s and 0.19 × 10−16 cm3/s, respectively. Equilibrium constant Θ = P28/P71 was calculated to be 0.069. These results demonstrate domination of direct energy transfer in the crystal and in comparison with other host materials provides favourable conditions for population of 5I7 energy level of holmium. A fraction of Ho3+ ions residing at 5I7 energy manifold in the crystal at equilibrium constant was calculated to be 53,4%. An increase of this fraction was predicted with further growth of holmium content. The results obtained from fluorescence dynamics measurement were confirmed by independent calculation of interaction microparameters in accordance with Förster-Dexter theory. The microparameters were calculated to be cTm→Ho = 35.1 × 10−40 cm6∙s−1 and cHo→Tm = 2.16 × 10−40 cm6∙s−1. The ration cHo→Tm/ cTm→Ho was to be 0.061, that is in a good agreement with the equilibrium constant obtained from fluorescence dynamics. CW laser operation with Tm,Ho:KYW in microchip configuration with LD pumping was realized for the first time to our knowledge. Maximum output power of 77 mW at 2070 nm was obtained with slope efficiency of 8.5% with respect to incident pump power. The laser was operating at the fundamental TEM00 mode.

Acknowledgments

In a part of energy transfer this work was funded by the subsidy of the Russian Government (agreement No.02.A03.21.0002) to support the Program of Competitive Growth of Kazan Federal University among World’s Leading Academic Centers. Microchip laser experiments were supported by Russian Science Foundation grant (Project # 15-12-10026).

References and links

1. K. Scholle, S. Lamrini, P. Koopmann, and P. Fuhrberg, “2 μm laser sources and their possible applications,” in Frontiers in Guided Wave Optics and Optoelectronics, B. Pal, ed. (Intech, 2010).

2. S. A. Payne, L. K. Smith, W. L. Kway, J. B. Tassano, and W. F. Krupke, “The mechanism of Tm→Ho energy transfer in LiYF4,” J. Phys. Condens. Matter 4(44), 8525–8542 (1992). [CrossRef]  

3. M. E. Storm and W. W. Rohrbach, “Single-longitudinal-mode lasing of Ho:Tm:YAG at 2.091 microm,” Appl. Opt. 28(23), 4965–4967 (1989). [CrossRef]   [PubMed]  

4. G. L. Bourdet and G. Lescroart, “Theoretical modeling and design of a Tm, Ho:YLiF4 microchip laser,” Appl. Opt. 38(15), 3275–3281 (1999). [CrossRef]   [PubMed]  

5. J. Izawa, H. Nakajima, H. Hara, and Y. Arimoto, “A tunable and longitudinal mode oscillation of a Tm,Ho:YLF microchip laser using an external etalon,” Opt. Commun. 180(1-3), 137–140 (2000). [CrossRef]  

6. G. L. Bourdet and R. A. Muller, “Tm,Ho:YLF microchip laser under Ti:sapphire and diode pumping,” Appl. Phys. B 70(3), 345–349 (2000). [CrossRef]  

7. B. Q. Yao, F. Chen, C. T. Wu, Q. Wang, G. Li, C. H. Zhang, Y. Z. Wang, and Y. L. Ju, “Diode-end-pumped Tm,Ho:YVO4 Microchip Laser at Room Temperature,” Laser Phys. 21(4), 663–666 (2011). [CrossRef]  

8. R. L. Zhou, Y. L. Ju, C. T. Wu, Z. G. Wang, and Y. Z. Wang, “A single-longitudinal-mode CW 0.25 mm Tm,Ho:GdVO4 microchip laser,” Laser Phys. 20(6), 1320–1323 (2010). [CrossRef]  

9. B. Q. Yao, F. Chen, P. B. Meng, C. H. Zhang, and Y. Z. Wang, “Diode Pumped Operation of Tm,Ho:YAP Microchip Laser,” Laser Phys. 21(4), 674–676 (2011). [CrossRef]  

10. P. Loiko, J. M. Serres, X. Mateos, K. Yumashev, N. Kuleshov, V. Petrov, U. Griebner, M. Aguiló, and F. Díaz, “Microchip laser operation of Tm,Ho:KLu(WO₄)₂ crystal,” Opt. Express 22(23), 27976–27984 (2014). [CrossRef]   [PubMed]  

11. A. A. Lagatsky, F. Fusari, S. V. Kurilchik, V. E. Kisel, A. S. Yasukevich, N. V. Kuleshov, A. A. Pavlyuk, C. T. A. Brown, and W. Sibbett, “Optical spectroscopy and efficient continuous-wave operation near 2 μm for a Tm,Ho:KYW laser crystal,” Appl. Phys. B 97(2), 321–326 (2009). [CrossRef]  

12. A. A. Lagatsky, F. Fusari, S. Calvez, S. V. Kurilchik, V. E. Kisel, N. V. Kuleshov, M. D. Dawson, C. T. Brown, and W. Sibbett, “Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm,” Opt. Lett. 35(2), 172–174 (2010). [CrossRef]   [PubMed]  

13. B. M. Walsh, N. P. Barnes, and B. Di Bartolo, “On the distribution of energy between the Tm 3F4 and Ho 5I7 manifolds in Tm-sensitized Ho luminescence,” J. Lumin. 75(2), 89–98 (1997). [CrossRef]  

14. B. M. Walsh, N. P. Barnes, and B. Di Bartolo, “The temperature dependence of energy transfer between the Tm 3F4 and Ho 5I7 manifolds of Tm-sensitized Ho luminescence in YAG and YLF,” J. Lumin. 90(1-2), 39–48 (2000). [CrossRef]  

15. N. P. Barnes, E. D. Filer, C. A. Morrison, and C. J. Lee, “Ho:Tm lasers. I. Theoretical,” IEEE J. Quantum Electron. 32(1), 92–103 (1996). [CrossRef]  

16. S. R. Bowman, M. J. Winings, R. C. Y. Auyeung, J. E. Tucker, S. K. Searles, and B. J. Feldman, “Laser and spectral properties of Cr, Tm, Ho:YAG at 2.1 μm,” IEEE J. Quantum Electron. 27(9), 2142–2149 (1991). [CrossRef]  

17. R. R. Petrin, M. G. Jani, R. C. Powell, and M. Kokta, “Spectral dynamics of laser-pumped Y3Al5O12:Tm,Ho lasers,” Opt. Mater. 1(2), 111–124 (1992). [CrossRef]  

18. D. L. Dexter, “A theory of sensitized luminescence in solids,” J. Chem. Phys. 21(5), 836 (1953). [CrossRef]  

19. J. R. Lakowicz, Principles of Fluorescence Spectroscopy (Kluwer Academic Press, 2006).

20. I. Z. Steinberg, “Long-range nonradiative transfer of electronic excitation energy in proteins and polypeptides,” Annu. Rev. Biochem. 40(1), 83–114 (1971). [CrossRef]   [PubMed]  

21. S. Bigotta, A. Toncelli, M. Tonelli, E. Cavalli, and E. Bovero, “Spectroscopy and energy transfer parameters of Tm3+- and Ho3+-doped Ba2NaNb5O15 single crystals,” Opt. Mater. 30(1), 129–131 (2007). [CrossRef]  

22. A. Toncelli, M. Tonelli, E. Zannoni, E. Cavalli, and S. Cialdi, “NIR luminescence and laser parameters of Ca3Sc2Ge3O12 garnet host crystals activated with Tm3+ and Ho3+,” J. Lumin. 92(3), 237–244 (2001). [CrossRef]  

23. A. Brenier, G. Boulon, C. Madej, C. Pédrini, and L. Lou, “Kinetics of transfer and back transfer in thulium-holmium-doped Gd3Ga5O12(Ca, Zr) garnet,” J. Lumin. 54(5), 271–277 (1993). [CrossRef]  

24. M. S. Gaponenko, P. A. Loiko, N. V. Gusakova, K. V. Yumashev, N. V. Kuleshov, and A. A. Pavlyuk, “Thermal lensing and microchip laser performance of Ng-cut Tm3+:KY(WO4)2 crystal,” Appl. Phys. B 108(3), 603–607 (2012). [CrossRef]  

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Figures (6)

Fig. 1
Fig. 1 Energy level transitions in Tm3+ and Ho3+ ions corresponding to absorption and fluorescence wavelengths used in the experiment.
Fig. 2
Fig. 2 Fluorescence dynamics of Tm(5at.%),Ho(0.4at.%):KY(WO4)2 crystal from 3F4 manifold of Tm3+ ions (a) and from 5I7 manifold of Ho3+ ions (b) under excitation of thulium at 1670 nm as well as from 5I7 manifold of Ho3+ ions (c) and 3F4 manifold of Tm3+ ions (d) under excitation of holmium at 1960 nm.
Fig. 3
Fig. 3 Fluorescence dynamics of Tm and Ho ions in KYW single crystal under excitation of thulium at 802 nm at early times (a) and at later times (b).
Fig. 4
Fig. 4 Thulium emission and holmium absorption (upper) and holmium emission and thulium absorption (lower) cross-section spectra in KYW single crystal.
Fig. 5
Fig. 5 Experimental setup of CW microchip laser.
Fig. 6
Fig. 6 Input-output characteristics of Tm,Ho:KYW laser (a) and gain spectra of Ho3+ ions in KYW (b).

Tables (2)

Tables Icon

Table 1 Energy transfer parameters in Tm,Ho-codoped KYW crystal compared to other host materials at room temperature

Tables Icon

Table 2 Energy transfer microparameters in Tm,Ho-codoped KYW crystal according to Förster-Dexter analysis compared to other host materials

Equations (5)

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n 2 ( t ) n 2 ( 0 ) = ( β α + β ) exp ( t τ ) + ( α α + β ) exp ( ( α + β ) t ) ,
n 7 ( t ) n 2 ( 0 ) = ( α α + β ) exp ( t τ ) ( α α + β ) exp ( ( α + β ) t ) ,
n 7 ( t ) n 7 ( 0 ) = ( α α + β ) exp ( t τ ) + ( β α + β ) exp ( ( α + β ) t ) ,
n 2 ( t ) n 2 ( 0 ) = ( β α + β ) exp ( t τ ) ( β α + β ) exp ( ( α + β ) t ) .
c D A = 9 c χ 2 16 π 4 n 2 σ D e m ( λ ) σ A a b s ( λ ) d λ .
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