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High-dimensional atom localization via spontaneously generated coherence in a microwave-driven atomic system

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Abstract

We investigate the two-dimensional (2D) and three-dimensional (3D) atom localization behaviors via spontaneously generated coherence in a microwave-driven four-level atomic system. Owing to the space-dependent atom-field interaction, it is found that the detecting probability and precision of 2D and 3D atom localization behaviors can be significantly improved via adjusting the system parameters, the phase, amplitude, and initial population distribution. Interestingly, the atom can be localized in volumes that are substantially smaller than a cubic optical wavelength. Our scheme opens a promising way to achieve high-precision and high-efficiency atom localization, which provides some potential applications in high-dimensional atom nanolithography.

© 2017 Optical Society of America

1. Introduction

Spontaneous generated coherence (SGC), one of the most intriguing effects in quantum optics, has attracted considerable interest in the last few decades. Many schemes [1–9] were proposed for control of spontaneous emission coherence. A rather typical work is that Paspalakis and Knight proposed a phase control scheme in a four-level atom driven by two lasers of the same frequencies [10] in 1998, where SGC exists in such atoms having two close-lying levels subject to the conditions that these levels are near degenerate and the corresponding dipole matrix elements are not orthogonal. As is well known, it is very difficult, if not impossible, to find a real atomic system with SGC to experimentally realize this scheme. Therefore, to overcome the above-mentioned difficulties several schemes have been proposed where the rigorous conditions are not required. For instance, Wu et al. studied the spontaneous-emission properties of a coherently driven four-level atom. They pointed out that the SGC could be observed in the experiment since the rigorous condition of nearly degenerate levels with nonorthogonal dipole moments was not required [11]. Later on, Li et al. investigated the features of spontaneous emission spectra in a coherently driven five-level atomic system by means of a radio frequency or microwave field driving a hyperne transition within the ground state [12]. Recently, Gao et al. [13] considered an atomic model can be found in real atoms, no stringent conditions have to be satisfied, so a corresponding experiment can be done to observe the expected phenomena related to SGC reported by Fountoulakis et al. [14]. More recently, two equivalent systems [15,16] have been experimentally performed to observe phenomena related to SGC without the rigorous requirement of close-lying levels.

In recent years, atomic localization has also been a topic of considerable interest due to its potential applications in laser cooling [17], atom nanolithograghy [18], Bose-Einstein condensation [19], and measurement of center-of-mass wave function [20,21]. From one-dimensional (1D) atomic localization to three-dimensional (3D) atomic localization, many researchers [22–48] have been put forward for localization of a single atom. In this paper, we present a new scheme to investigate the two-dimensional (2D) and 3D atomic localization behaviors based on SGC, in which we use a microwave field to drive the two highest lying levels of the four-level Y-type atomic system. Our scheme shows many advantages that the previous schemes [39–48] do not have. First, we show that the high-precision and high-resolution 2D and 3D atom localization behaviors can be realized by modulating the parameters of the system, which are well understood by qualitative explanations in the dressed-state picture. Second, we find that the localization precision and spatial resolution of the atom can be effectively modulated by the amplitude and phase of the microwave field. The effects of the initial populations on atom localization have also been studied. Particularly, by properly adjusting the system parameters, we can localize the atom at a particular position. Third, in this scheme, no stringent conditions have to be satisfied, so it is easy to carry out the corresponding experiment to observe the expected 2D and 3D atom localization phenomena related to SGC in atoms by the magneto-optical trap MOT technique. Otherwise, this system is also significant for control of 2D and 3D atom localization in atom-field systems since the amplitude and phase of the microwave field can be controlled conveniently.

2. The model and dynamic equations

We consider a four-level atom as depicted in Fig. 1(a). The level|1is coupled to the levels|2and|3by two coherent laser fields with carrier frequencies ofω1, ω3and Rabi frequencies ofΩ1,Ω3 respectively. A resonant microwave field with frequencyωmand Rabi frequencyΩmis used to couple the highest lying levels|2and|3through an allowed magnetic transition. We setΩ1andΩ3as real parameters, but microwave field Ωmas a complex parameter:Ωm=Ωm0exp(iφ), andφis the phase of microwave field, and may also be called the relative phase. Here, we consider both 2D and 3D atom localization behaviors in which the atom interacts with the standing-wave fields. The 2D atom localization scheme is thatΩ1andΩ3correspond, respectively, to the two orthogonal standing-wave fields that couple the different atomic transitions, i.e., Ω1=Ω10sin(k1x) andΩ3=Ω30sin(k2y), withk1andk2being the wave vectors of the two laser fields. On the other hand, the 3D atom localization scheme is thatΩ1corresponds to the combination of two orthogonal standing-wave fields with the same frequency that drives simultaneously the transition|1|2,whileΩ3corresponds to a standing-wave field, that is, Ω1=Ωxy[sin(k1x)+sin(k1y)]andΩ3=Ωzsin(k2z).

 figure: Fig. 1

Fig. 1 (a) The atomic energy levels in the bare state picture. (b) The atomic energy levels in the dressed-state picture.

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2.1 2D atomic localization scheme

For the 2D scheme, the transition|1|2is driven by a classical standing-wave field Ω1=Ω10sin(k1x), while the transition|1|3is driven by another standing-wave field Ω3=Ω30sin(k2y). We assume that the center-of-mass position of the atom is nearly constant along the directions of the laser waves and neglect the kinetic part of the atom from the Hamiltonian in the Raman-Nath approximation [49]. In the rotating-wave and the electric-dipole approximations, the interaction Hamiltonian for the system reads (=1)

H2D=k{gk,14exp(iδkt)bk|14|}+[Ω10sin(k1x)exp(iΔ1t)|21|+Ω30sin(k2y)exp(iΔ3t)|31|+Ωmexp(iΔmt)|32|+H.c],
wherebk(bk+)is the annihilation (creation) operator for the kth vacuum mode with frequencyωk;δk=ω14ωkandgk,14denote the detuning and the coupling constant between the kth vacuum mode and the transition between level|1and level|4;Δ1=ω21ω1,Δm=ω32ωm,and Δ3=ω31ω3represent detunings of three driving fields from corresponding resonances.

At any timet, the atom-field state vector can be written as

|Ψ2D=dxdyf(x,y)|x|y{[A1(x,y;t)|1+A2(x,y;t)|2+A3(x,y;t)|3]|{0}+kA4,k(x,y;t)|4|1k}
where thef(x,y)is the center-of-mass wave function of the atom. Here |{0}denotes the vacuum mode of the radiation field.

The atom localization in our scheme is based on the fact that the spontaneously emitted photon carries information about the position of atom in the x-y plane as a result of the spatial position-dependent atom-field interaction. When we detected at time ta spontaneously emitted photon in the vacuum mode of wave vectork, the atom is in its internal state|4and the state vector of the system, after making appropriate projection over|Ψ2D, is reduced to

|ψ4,1k=N4,1k|Ψ2D=Ndxdyf(x,y)A4,k(x,y;t)|x|y
hereNis a normalization factor. Thus, the conditional position probability distribution, i.e. the probability of finding the atom in the position(x,y)at timetis
W(x,y;t|4,1k)=|N|2|x|y|ψ4,1k|2=|N|2|f(x,y)|2|A4,k(x,y;t)|2
which can be derived from the probability amplitudeA4,k(x,y;t).

By solving the Schrödinger equation|Ψ˙2D(t)=iH2D|Ψ2D(t), and then using the Weisskopf-Wigner theory [50], we can obtain the following dynamical equations for probability amplitudes

A˙1(x,y;t)=iΩ1A2(x,y;t)iΩ3A3(x,y;t)Γ2A1(x,y;t),
A˙2(x,y;t)=iΩ1A1(x,y;t)iΩ2A3(x,y;t)iΔ1A2(x,y;t),
A˙3(x,y;t)=iΔ3A3(x,y;t)iΩ2A2(x,y;t)iΩ3A1(x,y;t),
A˙4,k(x,y;t)=igk,14A1(x,y;t)+iδkA4,k(x,y;t),
whereΓ=2π|gk,14|2D(ωk)is the spontaneous decay rate from level|1to level|4, andD(ωk)is the vacuum mode density at frequency in the free space.

The spontaneous emission spectrum is the Fourier transform ofE(t+τ)E+(t)t, and can be written as S(x,y)=Γ|A4,k(x,y;t)|2/2π|gk,14|2for the atom system. Here, we can see that the spontaneous emission spectrumS(x,y)is proportional to|A4,k(x,y;t)|2. Thus, the spontaneous emission from the atom can be used to characterize the conditional position probability distributionW(x,y;t|4,1k).Using the Laplace transform method [51] and the position-dependent spontaneous emission spectrum is given by

S(x,y)=Γ2π|(Ωm02αβ)A1(x,y;t)+g1A2(x,y;0)+g2A3(x,y;0)βΩ102[sin(k1x)]2+ηΩm02+αΩ302[sin(k2y)]2αβηg3|2,
here theα,β,η,g1,g2andg3are given by
α=Δ1+δk,β=Δ3+δk,η=δkiΓ2,
g1=βΩ10sin(k1x)Ω2Ω30sin(k2y),
g2=αΩ30sin(k2y)Ω10sin(k1x)Ωm,
g3=Ω10Ω30sin(k1x)sin(k2y)(Ωm+Ωm),
andA1(x,y;0),A2(x,y;0),A3(x,y;0)are initial populations distributed in levels|1,|2and|3, respectively. Equation (6) exhibits thatS(x,y)is dependent on the positions (x,y), detuningsδk, Δ1 and Δ3, the Rabi frequenciesΩ10, Ωm0 andΩ30, the phaseφ, and the initial populations A1(x,y;0), A2(x,y;0) and A3(x,y;0). It is, in principle, possible to obtain information about the position of the atom.

2.2 3D atomic localization scheme

For the 3D scheme, Ω1=Ωxy[sin(k1x)+sin(k1y)]corresponds to the combination of two orthogonal standing-wave fields with the same frequency that drives simultaneously the transition|1|2, while the transition|1|3is driven by a standing-wave fieldΩ3=Ωzsin(k2z). In the Raman-Nath approximation, the rotating-wave and the electric-dipole approximations, the interaction Hamiltonian is (=1)

H3D=k{gk,14exp(iδkt)bk|14|}+{Ωxy[sin(k1x)+sin(k1y)]exp(iΔ1t)|21|+Ωzsin(k2z)exp(iΔ3t)|31|+Ωmexp(iΔmt)|32|+H.c},
where Δ1=ω21ω1,Δm=ω32ωm,andΔ3=ω31ω3represent detunings of three driving fields.

The dynamics of this system can be described by using the probability amplitude equations. Then the wave function of the system at time t can be expressed in terms of the state vectors as

|Ψ3D=dxdydzf(x,y,z)|x|y|z{[A1(x,y,z;t)|1+A2(x,y,z;t)|2+A3(x,y,z;t)|3]|{0}+kA4,k(x,y,z;t)|4|1k}
wheref(x,y,z)is the center-of-mass wave function of the atom.

As we detected at timeta spontaneously emitted photon in the vacuum mode of wave vectork, the atom is in its internal state|4and the state vector of the system, after making appropriate projection overΨ3D, is reduced to

|ϕ4,1k=N˜4,1k|Ψ3D=N˜dxdydzf(x,y,z)A4,k(x,y,z;t)|x|y|z,
hereN˜is a normalization factor. Thus, the conditional position probability distribution, i.e. the probability of finding the atom in 3D space at timetis
W(x,y,z;t|4,1k)=|N˜|2|x|y|z|ϕ4,1k|2=|N˜|2|f(x,y,z)|2|A4,k(x,y;t)|2,
which can be derived from the probability amplitudeA4,k(x,y,z;t).

By solving the Schrödinger equation|Ψ˙3D(t)=iH3D|Ψ3D(t), and then using the Weisskopf-Wigner theory, we can obtain the following dynamical equations for probability amplitudes

A˙1(x,y,z;t)=iΩ1A2(x,y,z;t)iΩ3A3(x,y,z;t)Γ2A1(x,y,z;t),
A˙2(x,y,z;t)=iΩ1A1(x,y,z;t)iΩ2A3(x,y,z;t)iΔ1A2(x,y,z;t),
A˙3(x,y,z;t)=iΔ3A3(x,y,z;t)iΩ2A2(x,y,z;t)iΩ3A1(x,y,z;t),
A˙4,k(x,y,z;t)=igk,14A1(x,y,z;t)+iδkA4,k(x,y,z;t),
whereΓ=2π|gk,14|2D(ωk)is the spontaneous decay rate from level|1to level|4, andD(ωk)is the vacuum mode density at frequency in the free space.

The spontaneous emission spectrum is the Fourier transform ofE(t+τ)E+(t)t, and can be written as S(x,y,z)=Γ|A4,k(x,y,z;t)|2/2π|gk,14|2for the atom system. Here, we can see that the spontaneous emission spectrumS(x,y,z)is proportional to|A4,k(x,y,z;t)|2. Thus, the spontaneous emission from the atom can be used to characterize the conditional position probability distributionW(x,y,z;t|4,1k). And the position-dependent spontaneous emission spectrum is given by

S(x,y,z)=Γ2π|(Ωm02αβ)A1(x,y,z;0)+f1A2(x,y,z;0)+f2A3(x,y,z;0)βΩxy2[sin(k1x)+sin(k1y)]2+ηΩm02+αΩz2[sin(k2z)]2αβηf3|2,
here theα,β,η,f1,f2andf3are given by
α=Δ1+δk,β=Δ3+δk,η=δkiΓ2,
f1=βΩxy[sin(k1x)+sin(k1y)]Ω2Ωzsin(k2z),
f2=αΩzsin(k2z)Ωxy[sin(k1x)+sin(k1y)]Ωm,
f3=ΩxyΩz[sin(k1x)+sin(k1y)]sin(k2z)(Ωm+Ωm).
andA1(x,y,z;0),A2(x,y,z;0),A3(x,y,z;0)are initial populations distributed in levels|1,|2and|3, respectively. Equation (12) exhibits that S(x,y,z) is dependent on the positions (x,y,z), detuningsδk, Δ1 and Δ3, the Rabi frequenciesΩxy, Ωm0 andΩz, the phaseφ, and the initial populations A1(x,y,z;0), A2(x,y,z;0) and A3(x,y,z;0). It is, in principle, possible to obtain information about the position of the atom.

3. Results and discussion

In this section, we analyze the position-dependent spontaneous emission spectraS(x,y)andS(x,y,z), which directly reflect the conditional position probability distribution, and then demonstrate 2D and 3D atom localization schemes by measuring the frequency of spontaneously emitted photon. In this paper, all the parameters are in units of constant Γ, which should be in the order of MHz for rubidium atoms.

3.1 Case A: 2D atomic localization scheme

First of all, we consider the 2D atom localization where the transition|1|2is driven by a classical standing-wave fieldΩ1=Ω10sin(k1x), while the transition|1|3is driven by another standing-wave field Ω3=Ω30sin(k2y).

In Fig. 2, we plot spontaneous emission spectrumS(x,y)versus positions(k1x/π,k2y/π)for different detuning of spontaneously emitted photon. Forδk=0, as shown in Fig. 2(a), the maxima ofS(x,y)are located atk1x=nπork2y=mπ, wherenandmare integers. The atom is localized around the nodes of the two standing-wave fields. When the detuning is tuned toδk=5Γ, the peak maxima are situated in four quadrants and shows a craterlike pattern at center of xyplane [see Fig. 2(b)]. As we increase detuningδkto10Γ, the S(x,y) in Fig. 2(c) displays a latticelike pattern, and the atom is localized at the edges of these lattices. Finally, whenδk=15Γ, the peaks maxima show spikelike pattern, and the atom is located at the positions (k1x/π,k2y/π)=(0.5,0.5) or (k1x/π,k2y/π)=(0.5,0.5) as shown in Fig. 2(d). Therefore, the probability of finding the atom at each position is 50%. In fact, from Eq. (6), it is straightforward to show that the S(x,y) depends strongly on the detuningδk. Consequently, we can observe different localization peaks by changing the detuning of spontaneously emitted photon.

 figure: Fig. 2

Fig. 2 Spontaneous emission spectrumS(x,y) versus positions (k1x/π,k2y/π) for (a) δk=0; (b) δk=5Γ; (c) δk=10Γ; and (d) δk=15Γ. The other parameters are Δ1=Δ3=0, Ω10=10Γ, Ωm0=1.5Γ, Ω30=10Γ, and φ=0. The initial populations are A1(x,y;0)=1 and A2(x,y;0)=A3(x,y;0)=0.

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Keeping δk=15Γ, we study the effect of the microwave field on the 2D atom localization numerically in Fig. 3. On the condition ofΩm0=0.5Γ[see Fig. 3(a)], the peak maxima of spontaneous emission spectrumS(x,y), which represent the most probable positions for the atom, distribute in all four quadrants but mainly in second and fourth quadrants of thexy plane. When the microwave field is Ωm0=Γ[see Fig. 3(b)], two localization peaks in the first and third quadrants in Fig. 3(a) are completely disappeared. In such a condition, the uncertainty of conditional position probability is reduced. In the case of Ωm0=2Γ [see Fig. 3(c)], the spontaneous emission spectrum exhibits two craterlike patterns in second and fourth quadrants which lead to the localization of atom at these circles. Furthermore, when the microwave field is tuned to Ωm0=4Γ[see Fig. 3(d)], the localization peaks are also mainly distributed in the second and fourth quadrants but exhibit two large-caliber craterlike patterns compared with the case in Fig. 3(c). From the Fig. 3, we can conclude that only 50% detecting probability is obtained when we adjust the intensity of microwave field, but the localization precision can be controlled via this system parameter.

 figure: Fig. 3

Fig. 3 Spontaneous emission spectrumS(x,y) versus positions (k1x/π,k2y/π) for (a) Ωm0=0.5Γ; (b) Ωm0=Γ; (c) Ωm0=2Γ; and (d) Ωm0=4Γ. The other parameters are the same as Fig. 2(d).

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Next, we investigate the influence of the phase of the microwave field on the behavior of 2D atom localization in Fig. 4. When φ=0.5π orφ=1.5π, as shown in Figs. 4(a) and 4(c), we can see that there are four spikelike patterns in thexyplane. For the case thatφ=π, the peak maxima exhibit two spikelike patterns in the first and third quadrants. On the condition ofφ=2π, the peak maxima located at the positions (k1x/π,k2y/π)=(0.5,0.5) or (k1x/π,k2y/π)=(0.5,-0.5) as shown in Fig. 4(d), which is the same as the case in Fig. 2(d). As can be seen, the spatial pattern of position probability distribution of atom localization is sensitive to the phase of the microwave field.

 figure: Fig. 4

Fig. 4 Spontaneous emission spectrumS(x,y) versus positions (k1x/π,k2y/π) for (a) φ=0.5π; (b) φ=π; (c) φ=1.5π; and (d) φ=2π. The other parameters are the same as Fig. 2(d).

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In order to understand the roles of the initial populations on the 2D atom localization clearly, we show the dependence of spontaneous emission spectrumS(x,y)on the initial populations in Fig. 5. For the case that A2(x,y;0)=1 and A1(x,y;0)=A3(x,y;0)=0[see Fig. 5(a)], it can be seen that there are two localization patterns inxyplane. For the case thatA2(x,y;0)=0andA1(x,y;0)=A3(x,y;0)=1/2, the peak maxima of the spontaneous emission spectrum are only situated in the second quadrant with a spikelike pattern and thus the atom is localized at position, i.e., (k1x/π,k2y/π)=(0.5,0.5)as shown in Fig. 5(b), the localization peak in the fourth quadrant in Figs. 5(a) is completely disappeared. In this case, the probability of finding the atom in one period of the standing-wave fields is increased to 1, and the spatial resolution is about λ/10. For the case in Fig. 5(c), spontaneous emission spectrum shows only a spikelike pattern in the fourth quadrant, but the atom is localized at position (k1x/π,k2y/π)=(0.5,-0.5). WhenA1(x,y;0)=A2(x,y;0)=A3(x,y;0)=1/3 [see Fig. 4(d)], the result is more or less the same as Fig. 5(a), but the peak maxima of spontaneous emission spectrum become small and the detecting probability decreases from 1 to 1/2. By preparing the initial populations of the atoms in different levels, we can restrain certain localization peaks and confine the atom to half-wavelength regions, which is called sub-half-wavelength localization. This is a significant advantage that the previous scheme [43] does not have.

 figure: Fig. 5

Fig. 5 Spontaneous emission spectrumS(x,y) versus positions (k1x/π,k2y/π) for (a)A2(x,y;0)=1,A1(x,y;0)=A3(x,y;0)=0;(b)A1(x,y;0)=A3(x,y;0)=1/2, A2(x,y;0)=0; (c)A3(x,y;0)=0, A1(x,y;0)=A2(x,y;0)=1/2; and (d)A1(x,y;0)=A2(x,y;0)=A3(x,y;0)=1/3. The other parameters are the same as Fig. 2(d).

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3.2 Case B: 3D atomic localization scheme

In the following, we analyze the conditional position probability distribution of the atom via a few numerical calculations based on the Eq. (12), and then address how the system parameters can be used to achieve 3D atom localization by controlled spontaneous emission.

Isosurfaces for spontaneous emission spectrumS(x,y,z)=0.01versus the positions(k1x,k1y,k2z) for different values of the detuning of spontaneously emitted photon is plotted in Fig. 6. As can be seen, the spatial pattern of position probability distribution and the resolution of 3D atom localization depend strongly on the detuning of spontaneously emitted photon. Figures 6(a)-6(c) show the isosurfaces for spontaneous emission spectrum distributed at positions(k1x/π=k1y/π=0.5,1k2z/π1) or(k1x/π=k1y/π=0.5,1k2z/π1). However, when the detuningδk=13Γ, the localization structures display two small-size spheres and two large-size spheres with different localization precision in four different subspaces of the 3D space, and the atom localized at these spheres [see Fig. 6(d)]. From Eq. (12), one can see that there is a strong correlation between the frequency detuning of the spontaneously emitted photon and the position of the atom. The measurement of a particular frequency detuning corresponds to the localization of the atom within a sub-wavelength region of the standing-wave field in three dimensions.

 figure: Fig. 6

Fig. 6 Isosurfaces for spontaneous emission spectrumS(x,y,z)=0.01 versus positions (k1x/π,k1y/π,k2z/π) for (a)δk=10Γ; (b) δk=11Γ; (c) δk=12Γ; and (d) δk=13Γ. The other parameters are Δ1=Δ3=0,Ωxy=5Γ, Ωm0=0.5Γ, Ωz=5Γ, and φ=0. The initial populations are A1(x,y,z;0)=1andA2(x,y,z;0)=A3(x,y,z;0)=0.

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In Fig. 7, we study the effect of the intensity of the microwave field on the spatial distributions of the 3D atom localization. For the microwave field, i.e. Ωm0=0.8ΓorΓ, the isosurfaces for S(x,y,z)show two small-size spheres and two large-size spheres in 3D space [see Figs. 7(a) and 7(b)]. By comparing the Figs. 7(a) and 7(b), it is found that the spatial resolution of atom localization improves with adjusting the intensity of the microwave field, and the spatial resolution is about λ/20(see small-size spheres Fig. 7(b)). As a consequence, the atom can be localized with a high-precision within a certain range. When the microwave field is adjusted toΩm0=1.5Γ, two small size spheres in the two subspaces are completely disappeared, as shown in Fig. 7(c). In such a case, we can achieve much better probability of finding the atom at each position. Furthermore, with a further increase ofΩm(Ωm0=2Γ) the size of the spheres becomes larger, which indicates that the resolution of atom localization is reduced.

 figure: Fig. 7

Fig. 7 Isosurfaces for spontaneous emission spectrumS(x,y,z)=0.01 versus positions (k1x/π,k1y/π,k2z/π) for (a)Ωm0=0.8Γ; (b) Ωm0=Γ; (c) Ωm0=1.5Γ; and (d) Ωm0=2Γ. The other parameters are the same as Fig. 6(d).

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To obtain a better understanding of how the phase of the microwave field φ modifies the 3D atom localization, we show isosurfaces for spontaneous emission spectrumS(x,y,z)=0.01 versus the positions(k1x,k1y,k2z) for different values of phase of the microwave field in Fig. 8. As shown in Fig. 8, one sees that the 3D localization structures in Fig. 8(a) are completely the same as the case in Fig. 8(c), while 3D localization structures in Fig. 8(b) are the mirror image of the case in Fig. 8(d) with respect to the planez=0.

 figure: Fig. 8

Fig. 8 Isosurfaces for spontaneous emission spectrumS(x,y,z)=0.01 versus positions (k1x/π,k1y/π,k2z/π) for (a)φ=0.5π; (b) φ=π; (c) φ=1.5π; and (d) φ=2π. The other parameters are the same as Fig. 6(d).

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Finally, we turn to illustrate the influences of the initial populations on the 3D atom localization are depicted in Fig. 9. Clearly, the 3D atom localization is very sensitive to the initial populations. The 100% probability of finding an atom within 3D space can be achieved for the caseA2(x,y,z;0)=0and A1(x,y,z;0)=A3(x,y,z;0)=1/2[see Fig. 9(c)]. This is the maximum probability obtained in our previous proposed scheme [46], and is increased by a factor of 4 or 8 compared with the previous schemes [45,47].

 figure: Fig. 9

Fig. 9 Isosurfaces for spontaneous emission spectrumS(x,y,z)=0.01 versus positions (k1x/π,k1y/π,k2z/π) for (a)A2(x,y,z;0)=1, A1(x,y,z;0)=A3(x,y,z;0)=0; (b)A3(x,y,z;0)=0,A1(x,y,z;0)=A2(x,y,z;0)=1/2;(c)A1(x,y,z;0)=A3(x,y,z;0)=1/2, A2(x,y,z;0)=0; and (d) A1(x,y,z;0)=A2(x,y,z;0)=A3(x,y,z;0)=1/3. The other parameters are Δ1=Δ3=0,Ωxy=5Γ, δk=13Γ, Ωz=5Γ, φ=0, and Ωm0=Γ.

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Before ending this section, we will give some physical explanations of the above results. In fact, the interesting phenomena discussed above can be qualitatively explain in the dressed-state picture. By driving the system with three fieldsΩ1,ΩmandΩ3, the levels|1,|2and|3in the bare state can be replaced by three new states|+, |0,and|-, as shown in Fig. 1(b). It is straightforward to show that there exists quantum interference between three different spontaneous emission pathways|+|4,|0|4, and|-|4. Multiple SGC arise among these competitive transition pathways and result in spectral-line narrowing, spectra-line enhancement, spectral-line suppression, and fluorescence quenching in the spontaneous emission spectra [11–13]. Consequently, we can observe different localization structures in two and three dimensions.

4. Conclusions

Before concluding, we discuss the possible experimental realization of our proposed scheme. The experimental system for this atomic scheme can be realized by theRbatom with5S1/2,5P3/2,5D3/2, and5D5/2behaving as the|4, |1,|2,and|3state labels, respectively. The state5D3/2is coupled to the state5D5/2by a resonant microwave field with frequency around 120 GHz, and the microwave field can be obtained by means of a cavity as illustrated in paper [52]. The value of the spontaneous decay rate Γin this system is 6 MHz. Moreover, in order to eliminate the Doppler broadening effect, atoms should be trapped and cooled by the technique of magneto-optical trap MOT [53].

To sum up, we have shown that by choosing appropriate parameters of the system, such as the phase, amplitude, and initial population distribution, we can obtain a very wide variety of interesting localization patterns, such as craterlike, spikelike, latticelike, spherelike patterns, and so on. The spontaneous emission spectrum is sensitive to variables of the phase and amplitude of microwave field, so we can control the two-dimensional and three-dimensional atom localization behaviors more conveniently. The corresponding experiment to observe the expected 2D and 3D atom localization phenomena related to SGC can be more conveniently realized in atoms, since no rigorous conditions are required.

Funding

This work is supported by the National Natural Science Foundation of China (Grant Nos. 11674002 and 11205001) and Doctoral Scientific Research Fund of Anhui University.

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Figures (9)

Fig. 1
Fig. 1 (a) The atomic energy levels in the bare state picture. (b) The atomic energy levels in the dressed-state picture.
Fig. 2
Fig. 2 Spontaneous emission spectrum S(x,y) versus positions ( k 1 x/π, k 2 y/π) for (a) δ k =0 ; (b) δ k =5Γ ; (c) δ k =10Γ ; and (d) δ k =15Γ . The other parameters are Δ 1 = Δ 3 =0 , Ω 10 =10Γ , Ω m0 =1.5Γ , Ω 30 =10Γ , and φ=0 . The initial populations are A 1 (x,y; 0)=1 and A 2 (x,y;0)= A 3 (x,y;0)=0 .
Fig. 3
Fig. 3 Spontaneous emission spectrum S(x,y) versus positions ( k 1 x/π, k 2 y/π) for (a) Ω m0 =0.5Γ ; (b) Ω m0 =Γ ; (c) Ω m0 =2Γ ; and (d) Ω m0 =4Γ . The other parameters are the same as Fig. 2(d).
Fig. 4
Fig. 4 Spontaneous emission spectrum S(x,y) versus positions ( k 1 x/π, k 2 y/π) for (a) φ=0.5π ; (b) φ=π ; (c) φ=1.5π ; and (d) φ=2π . The other parameters are the same as Fig. 2(d).
Fig. 5
Fig. 5 Spontaneous emission spectrum S(x,y) versus positions ( k 1 x/π, k 2 y/π) for (a) A 2 (x,y; 0)=1 , A 1 (x,y;0)= A 3 (x,y;0)=0 ;(b) A 1 (x,y;0)= A 3 (x,y;0)=1/ 2 , A 2 (x,y; 0)=0 ; (c) A 3 (x,y; 0)=0 , A 1 (x,y;0)= A 2 (x,y;0)=1/ 2 ; and (d) A 1 (x,y;0)= A 2 (x,y;0)= A 3 (x,y;0)=1/ 3 . The other parameters are the same as Fig. 2(d).
Fig. 6
Fig. 6 Isosurfaces for spontaneous emission spectrum S(x,y,z)=0.01 versus positions ( k 1 x/π, k 1 y/π, k 2 z/π) for (a) δ k =10Γ ; (b) δ k =11Γ ; (c) δ k =12Γ ; and (d) δ k =13Γ . The other parameters are Δ 1 = Δ 3 =0 , Ω xy =5Γ , Ω m0 =0.5Γ , Ω z =5Γ , and φ=0 . The initial populations are A 1 (x,y,z; 0)=1 and A 2 (x,y,z;0)= A 3 (x,y,z;0)=0 .
Fig. 7
Fig. 7 Isosurfaces for spontaneous emission spectrum S(x,y,z)=0.01 versus positions ( k 1 x/π, k 1 y/π, k 2 z/π) for (a) Ω m0 =0.8Γ ; (b) Ω m0 =Γ ; (c) Ω m0 =1.5Γ ; and (d) Ω m0 =2Γ . The other parameters are the same as Fig. 6(d).
Fig. 8
Fig. 8 Isosurfaces for spontaneous emission spectrum S(x,y,z)=0.01 versus positions ( k 1 x/π, k 1 y/π, k 2 z/π) for (a) φ=0.5π ; (b) φ=π ; (c) φ=1.5π ; and (d) φ=2π . The other parameters are the same as Fig. 6(d).
Fig. 9
Fig. 9 Isosurfaces for spontaneous emission spectrum S(x,y,z)=0.01 versus positions ( k 1 x/π, k 1 y/π, k 2 z/π) for (a) A 2 (x,y,z; 0)=1 , A 1 (x,y,z;0)= A 3 (x,y,z;0)=0 ; (b) A 3 (x,y,z; 0)=0 , A 1 (x,y,z;0)= A 2 (x,y,z;0)=1/ 2 ;(c) A 1 (x,y,z;0)= A 3 (x,y,z;0)=1/ 2 , A 2 (x,y,z; 0)=0 ; and (d) A 1 (x,y,z;0)= A 2 (x,y,z;0)= A 3 (x,y,z;0)=1/ 3 . The other parameters are Δ 1 = Δ 3 =0 , Ω xy =5Γ , δ k =13Γ , Ω z =5Γ , φ=0 , and Ω m0 =Γ .

Equations (26)

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H 2D = k { g k,14 exp( i δ k t ) b k |14| }+[ Ω 10 sin( k 1 x ) exp( i Δ 1 t )|21|+ Ω 30 sin( k 2 y )exp( i Δ 3 t )|31|+ Ω m exp( i Δ m t )|32|+H.c],
| Ψ 2D = dxdyf( x,y ) |x|y { [ A 1 ( x,y;t )|1+ A 2 ( x,y;t )|2+ A 3 ( x,y;t )|3 ]| { 0 } + k A 4,k ( x,y;t )|4| 1 k }
| ψ 4, 1 k =N 4, 1 k | Ψ 2D =N dxdyf( x,y ) A 4,k ( x,y;t )|x|y
W( x,y;t|4, 1 k )= | N | 2 | x|y| ψ 4, 1 k | 2 = | N | 2 | f( x,y ) | 2 | A 4,k ( x,y;t ) | 2
A ˙ 1 ( x,y;t )=i Ω 1 A 2 ( x,y;t )i Ω 3 A 3 ( x,y;t ) Γ 2 A 1 ( x,y;t ),
A ˙ 2 ( x,y;t )=i Ω 1 A 1 ( x,y;t )i Ω 2 A 3 ( x,y;t )i Δ 1 A 2 ( x,y;t ),
A ˙ 3 ( x,y;t )=i Δ 3 A 3 ( x,y;t )i Ω 2 A 2 ( x,y;t )i Ω 3 A 1 ( x,y;t ),
A ˙ 4,k ( x,y;t )=i g k,14 A 1 ( x,y;t )+i δ k A 4,k ( x,y;t ),
S( x,y )= Γ 2π | ( Ω m0 2 αβ ) A 1 ( x,y;t )+ g 1 A 2 ( x,y;0 )+ g 2 A 3 ( x,y;0 ) β Ω 10 2 [ sin( k 1 x ) ] 2 +η Ω m0 2 +α Ω 30 2 [ sin( k 2 y ) ] 2 αβη g 3 | 2 ,
α= Δ 1 + δ k ,β= Δ 3 + δ k ,η= δ k i Γ 2 ,
g 1 =β Ω 10 sin( k 1 x ) Ω 2 Ω 30 sin( k 2 y ),
g 2 =α Ω 30 sin( k 2 y ) Ω 10 sin( k 1 x ) Ω m ,
g 3 = Ω 10 Ω 30 sin( k 1 x )sin( k 2 y )( Ω m + Ω m ),
H 3D = k { g k,14 exp( i δ k t ) b k |14| }+{ Ω xy [sin( k 1 x )+sin( k 1 y )] exp( i Δ 1 t )|21|+ Ω z sin( k 2 z )exp( i Δ 3 t )|31|+ Ω m exp( i Δ m t )|32|+H.c},
| Ψ 3D = dxdydzf( x,y,z ) |x|y|z { [ A 1 ( x,y,z;t )|1+ A 2 ( x,y,z;t )|2+ A 3 ( x,y,z;t )|3 ]| { 0 } + k A 4,k ( x,y,z;t )|4| 1 k }
| ϕ 4, 1 k = N ˜ 4, 1 k | Ψ 3D = N ˜ dxdydzf( x,y,z ) A 4,k ( x,y,z;t )|x|y|z,
W( x,y,z;t|4, 1 k )= | N ˜ | 2 | x|y| z| ϕ 4, 1 k | 2 = | N ˜ | 2 | f( x,y,z ) | 2 | A 4,k ( x,y;t ) | 2 ,
A ˙ 1 ( x,y,z;t )=i Ω 1 A 2 ( x,y,z;t )i Ω 3 A 3 ( x,y,z;t ) Γ 2 A 1 ( x,y,z;t ),
A ˙ 2 ( x,y,z;t )=i Ω 1 A 1 ( x,y,z;t )i Ω 2 A 3 ( x,y,z;t )i Δ 1 A 2 ( x,y,z;t ),
A ˙ 3 ( x,y,z;t )=i Δ 3 A 3 ( x,y,z;t )i Ω 2 A 2 ( x,y,z;t )i Ω 3 A 1 ( x,y,z;t ),
A ˙ 4,k ( x,y,z;t )=i g k,14 A 1 ( x,y,z;t )+i δ k A 4,k ( x,y,z;t ),
S( x,y,z )= Γ 2π | ( Ω m0 2 αβ ) A 1 ( x,y,z;0 )+ f 1 A 2 ( x,y,z;0 )+ f 2 A 3 ( x,y,z;0 ) β Ω xy 2 [ sin( k 1 x )+sin( k 1 y ) ] 2 +η Ω m0 2 +α Ω z 2 [ sin( k 2 z ) ] 2 αβη f 3 | 2 ,
α= Δ 1 + δ k ,β= Δ 3 + δ k ,η= δ k i Γ 2 ,
f 1 =β Ω xy [ sin( k 1 x )+sin( k 1 y ) ] Ω 2 Ω z sin( k 2 z ),
f 2 =α Ω z sin( k 2 z ) Ω xy [ sin( k 1 x )+sin( k 1 y ) ] Ω m ,
f 3 = Ω xy Ω z [ sin( k 1 x )+sin( k 1 y ) ]sin( k 2 z )( Ω m + Ω m ).
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