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Design of praseodymium-doped chalcogenide micro-disk emitting at 4.7 µm

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Abstract

A compact amplifier based on chalcogenide Pr3+-doped micro-disk coupled to two ridge waveguides is designed and refined by means of a home-made computer code. The gain G ≈ 7.9 dB is simulated for a Pr3+ concentration of 10 000 ppm, input signal power of −30 dBm at the wavelength 4.7 µm and input pump power of 50 mW at the wavelength 1.55 µm. In the laser behavior, i.e. without input signal, the maximum slope efficiency S = 8.1 × 10−4 is obtained for an input pump power of 2 mW. This value is about six times higher than that simulated for an optimized erbium-doped micro-disk.

© 2017 Optical Society of America

1. Introduction

Whispering gallery mode resonators are characterized by low reflection losses and very small sizes. These peculiarities allow extremely small mode volumes, high power densities and high-quality factors Q. Their compactness and manufacturing cost are very attractive items for actual photonic applications.

Microspheres and micro-disks have been largely investigated as key elements in a number of optical sensing set-ups. They exhibit, in many respects, strong points and drawbacks. Micro-disks allow potentially higher integration degree, within complex optical circuits, than microspheres [1, 2], mechanical stability and low-cost fabrication. A drawback is the lower quality factor in comparison with microspheres. This is due to the higher optical losses caused by the technological fabrication process [3]. A common technique for fabricating micro-disks is the conventional photolithography and reactive ion etching process [3]. An alternative technique is based on optical fiber tapering, cleaving and splicing [4]. Micro-disks made through these fabrication procedures exhibit good quality factors, close to Q = 8 × 106 [5]. Moreover, a micro-disk resonator vertically coupled to a buried oxide access waveguide, using AlGaAs/AlOx technology, was demonstrated in [6]. The sample, resonating at the wavelength λ = 1.6 µm, exhibited quality factors up to Q = 8.5 × 103.

Mid-infrared wavelength range promises a number of applications in different fields such as spectroscopy and optical sensing. Novel sensing set-ups can be designed to detect the vibrational transitions exhibited by many organic species and biomolecules [7, 8]. Rare earth doped micro-disks can be employed in order to fabricate active sensors, dramatically increasing the light interaction with chemical or biological species lying in the medium surrounding their surface. The optimization of these optical structures in the medium infrared wavelength range is welcome in order to obtain strong resonant wavelength shift or strong absorption as main effects to be exploited for sensing operation.

Chalcogenide glasses (ChG) are characterized by a wide transmissivity, in both near- and mid-infrared wavelength ranges. In addition, they have relatively good mechanical strength, chemical durability in water and atmosphere [9, 10], high linear and nonlinear refractive index, photosensitivity, high quantum efficiency and large radiative decay rates [11–14]. Moreover, chalcogenide glasses can be host materials for rare earths, providing efficient emission especially in the mid-infrared because of their low phonon energy [9]. As an example, lasing in chalcogenide glasses doped with neodymium and thulium is reported in [15–17]; dysprosium luminescence is exploited for the fabrication of an active chalcogenide CO2 sensor at λ = 4.35 µm [18–21]; erbium luminescence in micro-waveguide at λ = 2.8 µm is illustrated in [22]; mid-infrared photoluminescence of praseodymium-doped chalcogenide fibers is reported in [23]. The feasibility of ChG-on-silicon mid-IR micro-resonators with an intrinsic quality factor Q = 2 × 105 at λ = 5.2 µm is demonstrated in [24].

In this paper, a home-made code is developed and exploited in order to design a chalcogenide Pr3+-doped resonant micro-disk. It is coupled to two ridge waveguides, the former guiding the pump beam and the latter the signal to be amplified/generated. To the best of our knowledge, for the first time a Pr3+-doped micro-disk amplifying/lasing at λ ≈ 4700 nm is optimized and its feasibility is investigated.

2. Theory

The model and the design procedures are divided in three main sections:

  • passive structure model, in order to obtain the electromagnetic field profile of both micro-resonator and optical waveguides, by neglecting the rare earth; this section is subdivided in two subsections: a) passive structure coarse model (design) and b) passive structure refined model (design);
  • optical coupling model, based on the coupled mode theory in order to simulate the coupling between the resonator and the waveguides;
  • active behavior model, based on the rate equations for the rare-earth ions population densities in order to simulate the optical gain/lasing. This model scheme is similar to that used in [25–28].

This approach can be followed, more in general, for the simulation of any active WGM micro-resonator.

2.1. Passive structure model

The Pr3+-doped micro-disk coupled to two ridge waveguides, one for the signal and the other one for the pump, is sketched in Fig. 1. AinP,S, AoutP,S and AP,S are the amplitudes of electromagnetic field at the input and output waveguide sections and inside the micro-disk, respectively; the superscripts P and S indicate the pump and signal, respectively; τext and τ0 are the coupling and intrinsic lifetimes, respectively. These parameters will be defined in the following.

 figure: Fig. 1

Fig. 1 Micro-disk coupled to two ridge waveguides, one for the pump P and the other for the signal S. Ain, Aout and A are the amplitudes of electromagnetic field at the input and output waveguide sections and inside the micro-disk, respectively. τext and τ0 are the coupling and intrinsic lifetimes, respectively.

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A preliminary design, i.e. the passive structure coarse design a) of the micro-disk is carried out by considering the whispering gallery mode analytic expression, i.e. their closed form [29]. The implemented computer code is very quick since the solutions of the closed/analytical formulation are found. In fact, the micro-disk is considered as a 1D, slab waveguide, in order to calculate the mode effective refractive index neff. The structure is constituted by three layers: air, micro-disk core, buffer. Air and buffer layers are considered semi-infinite. The micro-disk thickness is hµdisk. The micro-disk core has a refractive index higher than that of the other layers, so the total internal reflection occurs at each interface.

With the reference frame reported in Fig. 1 and the aforementioned approximation, light propagates in the equivalent waveguide along z with an exponential variation exp(−γz). The electromagnetic analysis of the slab waveguide is developed by finding the solutions of the Helmholtz equation in Cartesian coordinates.

By considering the transverse electric (TE) modes, the electric field components along x and z become negligible compared to y component. The Helmholtz equation can be simplified as follows [29]:

2Ey,i(x)x2=(ki2γ2)Ey,i(x)
where Ey;i is the y component of the electric field E; ki=ωμiεi is the wave vector in the layer i; γ = kneff is the propagation constant along z; neff is the effective refractive index; k=ωμ0ε0 is the wave vector in vacuum; µ0 and ε0 are the vacuum permeability and permittivity, respectively.

By imposing the boundary conditions, the characteristic equation is obtained [30]:

tan(νhμdisk)=ν(η+χ)ν2ηχ
where:
ν=nμdisk2k2γ2,η=γ2nbuffer2k2,χ=γ2nair2k2

hµdisk is the micro-disk thickness, nµdisk, nbuffer and nair are the refractive indices of micro-disk core, buffer and air, respectively. The effective refractive index neff of the structure is obtained by Eq. (1). Each solution is labeled with the parameter p related to the modal order. The parameter p represents the number of field maxima in the transversal direction x. This method applied to the slab waveguide is generally known as EIM (effective index method) in x direction. The effective refractive index neff is employed in the 2D analysis over the equatorial plane y-z involving the cylindrical Bessel equation [29]. More precisely, the 2D characteristic equation of the micro-disk is written. The separation of the cylindrical variables r, φ (see Fig. 1) in Helmholtz equation is exploited to obtain the radial component of the electric field outside the micro-disk (r > Rµdisk), as reported in Eq. (4) [29].

Er(r,φ)=NJm(2πλrneffr)exp[2πλrneff2nair2(ra)]exp(jmφ)
where N is a constant obtained by imposing boundary conditions; Jm is the Bessel function of first kind of order m; λr is the resonant wavelength; Rµdisk is the micro-disk radius; m is the azimuthal parameter, i.e. the number of electromagnetic field maxima in the azimuthal direction.

The boundary condition Er (r, φ) = 0 is imposed for r > Rµdisk. Therefore, Eq. (5) is written:

Er(r,φ)=0Jm(2πλrneffRμdisk)=0

By solving Eq. (5), the micro-disk radius Rµdisk and the azimuthal parameter m are calculated for each resonant wavelength λr. Therefore, each WGMm,n,p in the micro-disk is characterized by the three parameter m, n and p. The radial parameter n is the number of field maxima along the radial direction. By employing the aforementioned model, the electromagnetic design of the passive structure is coarsely performed.

The passive structure refined design b) is performed via a full vectorial finite element method solver (FEM). It is used to accurately simulate the electromagnetic field profile for waveguides and micro-disk at the signal and pump wavelengths. The waveguides are designed to operate in single mode regime. The FEM recovered electromagnetic field profiles of the WGMs and of the waveguide modes are used in the rate equations described in the following section on optical coupling.

2.2. Optical coupling model

The optical coupling between the micro-disk and the waveguides is evaluated by using the coupled mode theory [31]. Some assumptions are made in the developed model: i) weak coupling, ii) slowly varying amplitude approximation.

The micro-disk is considered as a lumped system. The amplitude of the electromagnetic field in the micro-disk is AP/S, where the superscripts P and S indicate the pump and signal, respectively. The time evolution of AP/S in the micro-disk is expressed as follows [32]:

dAP/Sdt=(1τ0P/S2τextP/S+gP/S+jΔω)AP/Sj2τextP/STrttAinP/S

ω = ωwωµdisk is the frequency detuning, i.e. the difference between input waveguide frequency ωw and micro-disk resonant frequency ωµdisk; Trtt = 2πRµdiskneff/c is the round trip time inside the micro-disk; AinP/S is the amplitude of the electromagnetic field at the input section of each waveguide; gP/S is a term concerning the rare-earth/light interaction which will be described in the following. Finally, the power out-coupling in the waveguides can be obtained by power conservation.

τextP/S=2Trtt/κ2 is the coupling lifetime related to the coupling between the micro-disk and the waveguide; κ is the cavity decay rate, it is derived by the overlap integral [32]:

κ=k2nμdisk2nair22γw3EwEμdisk*dV
where Ew and Eµdisk are the electromagnetic field profiles in the waveguides and in the micro-disk, respectively; their power is normalized, i.e. the total power flow through the transversal surface is set equal to 1 W; γw is the propagation constant of the waveguide along z direction.

τ0P/S=QP/S/ωμdisk is the intrinsic lifetime related to the total power loss. Three different loss phenomena are considered in the model for the evaluation of the quality factor [33]:

1QP/S=1QabsP/S+1QssP/S+1QradP/S

QabsP/S is the quality factor due to the light absorption in the micro-disk and can be expressed as [29]:

QabsP/S=2πneffζλr
where ζ is a spatially averaged absorption coefficient.

QssP/S is the quality factor due to the surface scattering losses. Scattering losses are mainly due to the irregularities on the micro-disk sidewalls. The roughness on the top and the bottom surfaces can be neglected. The scattering quality factor can be expressed as [33]:

QssP/S=3λr38π7/2nair(nμdisk2nair2)ϑVμdiskVss
where ϑ is the dielectric contrast constant and Vss is the effective volume of a typical scattering structure [33]:
ϑ=neff2(nμdisk2nair2)nμdisk2(neff2nair2),Vss=RμdiskLchμdiskσr

neff is the effective refractive index of the equivalent 1D waveguide, Vµdisk is the volume of the micro-disk, Lc and σr are the correlation length and standard deviation of the roughness amplitude, respectively.

QradP/S is the quality factor due to the stored internal energy. It is related to the tunneling of light along the curvature of the micro-disk. It can be calculated as in [34]:

QradP/S=ωμdisk2WePd=ωμdisk2WmPd
where We and Wm are the electric and magnetic energy in the micro-disk, respectively; Pd is the dissipated power.

The signal waveguide is not coupled to disk modes at pump wavelength [35]. Indeed, the signal wavelength is longer than that of the pump. Therefore the distance between the micro-disk and the signal waveguide, if optimized for the signal coupling, is too large to allow the pump out-coupling. Moreover, the pump waveguide is designed in order to be below cut-off at the signal wavelength [35].

2.3. Active behavior model

The four-level model of praseodymium, reported in Fig. 2, is implemented in the computer code in order to simulate the light amplification.

 figure: Fig. 2

Fig. 2 Four-level model of praseodymium. The most important phenomena are represented: absorption and stimulated emission (full lines), pure-radiative spontaneous decay (dashed lines) and non-radiative spontaneous decay (dash-dotted lines).

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The most important phenomena of rare-earth/light interaction are taken into account in the rate equations:

N1+N2+N3+N4=NdN4dt=σPFPN1N4(1T4+β43τ4+β42τ4+β41τ4)=0dN3dt=N4(1T4+β43τ4)N3(1T3+β32τ3+β31τ3)=0dN2dt=σ12F12N1+N4β42τ4+N3(1T3+β32τ3)N2(1T2+1τ2+σ21F21)=0dN1dt=(σPFP+σ12F12)N1+N4β41τ4+N3β31τ3+N2(1T2+1τ2+σ21F21)=0
where Ni, i = 1, 2, 3, 4 is the ion concentration of i-th level; σP is the absorption cross section at pump wavelength λp = 1550 nm; σ12 and σ21 are the absorption and emission cross sections close to signal wavelength λs = 4700 nm, respectively; βij is the branching ratio from level i to level j; τi and Ti are the ion lifetimes for pure-radiative and non-radiative transitions from level i, respectively; FP and F21 are the photon flux at pump and signal wavelengths, respectively. In the simulation, the maximum Pr3+ concentration CPr = 10 000 ppm is considered. In fact, preliminary targets with this concentration were obtained via cathodic RF magnetron sputtering without particular difficulties. The normalized photoluminescence intensity versus the emission wavelength was recorded for 2S2G:Pr3+ samples fabricated on a) SiO2 confinement layer and on b) selenide confinement layer. By increasing the excitation density, the guided photoluminescence intensity of the transitions coming from the upper manifolds (3F3,3F4) increases if compared to the photoluminescence intensity coming from (3H6,3F2). This effect could be attributed to cross-relaxation and partly to the reabsorption of the emitted light by excited ions. The model for high concentrations could be completed by including other phenomena such as cross-relaxation and up-conversion after a suitable characterization. However, these transition should slightly affect the emission around λs = 4.7 µm.

The term concerning the light-matter interaction used in Eq. (6) is written in Eq. (14) for Pr3+-doped glass:

gP=cneffN1σPΓP,gS=cneff(N2σ21ΓSN1σ12ΓS)
where ΓP/S is the overlap factor of each WGM with the rare-earth profile:
ΓP/S=Ωd|EP/S(x,y)|2dxdy

EP/S is the normalized electric field distribution in the cross sectional plane x-y (Fig. 1) and Ωd is the doped area on the x-y plane.

In Eq. (6), a term taking into account the equivalent input noise corresponding to one photon, at the signal wavelength and in the bandwidth ∆ν, is added [25]:

A0=cN2σ21ΓShΔνλrneff2ε0AS

This allows to simulate the lasing action. For the amplifier operation, the gain G of the system is expressed as:

G=|AoutSAinS|2

In order to solve the rate equations of the rare earth model, the cross section of the micro-disk is divided into volume cells, as described in [25]. In particular, the region from half the radius to the edge of the micro-disk, is discretized in 54 volume cells. A variable-step variable-order solver based on the numerical differentiation formulas of orders 1 to 5 is employed to integrate Eq. (13) on the micro-disk volume.

The model described in this section is implemented in a more general code, including different rare earths. It has been validated by considering the Er3+-doped micro-disk described in [35]. In particular, the optimal distances between the micro-disk and the pump/signal waveguides and the two waveguide sections have been optimized since their values were not reported. All the other parameters considered in the simulation are those of [35]. The simulated output signal power, for the optimized structure, is in excellent agreement with that reported in [35], with a relative difference of a few percent.

3. Design of the passive structure

Figure 3 illustrates the transversal section of the designed structure. It is constituted by a Pr3+-doped chalcogenide micro-disk coupled to two coplanar ridge waveguides. A waveguide is designed for signal propagation at the wavelength λs = 4700 nm and the other one for the pump at wavelength λp = 1550 nm. The pump power could be provided by an erbium or an ytterbium/erbium co-doped fiber laser.

 figure: Fig. 3

Fig. 3 The praseodymium doped Pr3+:Ga5Ge20Sb10Se65 micro-disk coupled to the two waveguides made of the same glass. A buffer layer of Ga5Ge20Sb10S65 separates the micro-disk from the Si substrate.

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hw, hµdisk and hbuffer are the thicknesses of waveguides, micro-disk and buffer, respectively; wp and ws are the widths of pump and signal waveguides, respectively; gp and gs are the distances between the micro-disk and the pump/signal waveguide, respectively. In the model, the Si substrate is a semi-infinite layer, while the buffer thickness is hbuffer = 5 µm in order to prevent interaction between light and Si substrate.

The micro-disk and the two waveguides are made of Ga5Ge20Sb10Se65 selenide glass. The buffer layer is made of Ga5Ge20Sb10S65 sulphide glass. In order to develop a realistic feasibility investigation, the refractive index wavelength dispersions of preliminary glass samples are measured via NIR and Mid-IR VASE ellipsometry [36] and are taken into account in the model. Figure 4 reports the measured refractive index of the buffer nbuffer and of the micro-disk nµdisk glasses as a function of wavelength. Table 1 reports the refractive indices at signal and pump wavelengths for the two glasses.

 figure: Fig. 4

Fig. 4 Measured refractive index as a function of wavelength for Pr3+:Ga5Ge20Sb10Se65, nµdisk, and Ga5Ge20Sb10S65, nbuffer. The measurement is made by NIR and Mid-IR VASE ellipsometry.

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Tables Icon

Table 1. Refractive indices at signal and pump wavelengths measured by NIR and Mid-IR VASE ellipsometry (±0.001).

Figure 5 reports the absorption coefficient α measured on Ga5Ge20Sb10Se65 un-doped glass. The spatially averaged absorption ζ of Eq. (9) is related to the absorption α:

ζ=αΩμdisk|EP/S|2dxdy2|EP/S|2dxdy

 figure: Fig. 5

Fig. 5 Absorption coefficient α measured on Ga5Ge20Sb10Se65 un-doped fiber as a function of wavelength.

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EP/S is the normalized electric field profile of the considered WGM mode. In the ratio of Eq. (18), the integrals are calculated over the micro-disk cross section (numerator) and over the whole space (denominator).

The quality factor related to the scattering surface losses QssP/S is calculated by using correlation length Lc = 150 nm and standard deviation σr = 10 nm [35]. The quality factor related to the radiation QradP/S is evaluated by using the electromagnetic field obtained via FEM simulation.

Table 2 reports branching ratios βij, pure-radiative lifetimes τi and non-radiative lifetimes Ti calculated by Judd-Ofelt method for the considered Pr3+-doped Ga5Ge20Sb10Se65 glass with concentration CPr = 1000 ppm. Figure 6 illustrates the absorption and emission cross-sections of the same glass.

Tables Icon

Table 2. Spectroscopic parameters of the Pr3+:Ga5Ge20Sb10Se65.

 figure: Fig. 6

Fig. 6 Calculated emission and absorption cross-sections for the Pr3+:Ga5Ge20Sb10Se65 glass.

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At first, the signal waveguide is simulated with FEM solver by changing the width in the range 1 µm–10 µm with a step of 0.5 µm and the thickness in the range 0.5 µm–1.5 µm with a step of 0.1 µm. The confinement factor Ω is evaluated for each waveguide mode as the ratio of the integrals of normalized electric field profile Ew of the considered waveguide mode calculated over the waveguide cross-section and over the whole space:

Ω=Ωμdisk|Ew|2dxdy2|Ew|2dxdy

Figure 7 reports the confinement factor Ω as a function of width and height for a single-mode waveguide. For a fixed height, by increasing the width, the waveguide is at first below the cut-off and then exhibits single-mode propagation, for larger width it exhibits multi-mode propagation. Only single mode propagation is represented. Furthermore, in single-mode case, the confinement factor Ω increases with the waveguide width, i.e. the evanescent field becomes weaker. The pixels have a gray tone which is dark if Ω is low and bright if Ω is large. As an example, Fig. 8 illustrates the electric field norm distribution for single-mode waveguides at signal wavelength having height hw = 1 µm and width a) ws = 3.5 µm and b) ws = 6.5 µm. The confinement factors are Ω = 0.20 and Ω = 0.34. It is apparent that a large confinement factor Ω indicates small evanescent tails.

 figure: Fig. 7

Fig. 7 Confinement factor Ω as a function of width and height for single-mode signal waveguide.

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 figure: Fig. 8

Fig. 8 Distribution of the electric field norm for the fundamental mode in signal waveguide having hw = 1 µm and a) ws = 3.5 µm, b) ws = 6.5 µm.

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A height hw = 1.2 µm and a width ws = 3.5 µm are chosen for the signal waveguide. The micro-disk and the two waveguides have the same thickness, hµdisk = hw = 1.2 µm. This choice is made by supposing to exploit an RF sputtering process for the device construction.

The FEM solver is used to simulate the pump waveguide and a width wp = 0.5 µm is identified in order to obtain a single-mode operation. In the signal waveguide the fundamental mode polarization is quasi-TE, while in the pump waveguide it is quasi-TM.

Figure 9 reports the micro-disk effective refractive index neff as a function of micro-disk thickness obtained via Eq. (2) for λs = 4700 nm. In case of hµdisk = 1.2 µm, the effective refractive index is neff = 2.33 for the fundamental mode having longitudinal parameter p = 1. The characteristic equation Eq. (5) is solved by imposing fundamental WGM solution, i.e. by putting l = m and the further condition n = 1. The micro-disk radius Rµdisk and the azimuthal parameter m of the WGM having resonant wavelength close to λs = 4700 nm are identified.

 figure: Fig. 9

Fig. 9 Micro-disk effective refractive index neff as a function of disk thickness for λs = 4700 nm. The subscript p in TEp is the longitudinal parameter of the considered WGMm,n,p.

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Figure 10 illustrates the micro-disk radius Rµdisk as a function of wavelength obtained by solving Eq. (5). The smallest admissible micro-disk radius Rµdisk = 65 µm is chosen. This allows to reduce the computational cost of the simulation.

 figure: Fig. 10

Fig. 10 Micro-disk radius Rµdisk as a function of the resonant wavelength obtained by solving Eq. (5).

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The micro-disk obtained using the coarse design method is tested with FEM solver in order to verify the resonance at signal and pump wavelengths and find more accurate solutions.

To resume the passive design, the suitable geometrical parameters of the micro-disk and the coupling waveguides are chosen by considering i) a suitable micro-disk radius in order to have resonance at both the pump and signal wavelengths; ii) waveguide dimensions in order to have single-mode propagation resonance at both the pump and signal wavelengths and maximize the overlapping factor Ω; iii) the same thickness for waveguides and micro-disk because of sputtering process; iv) buffer thickness in order to prevent interaction between waveguide and Si substrate. The optimized geometrical parameters are listed in Table 3.

Tables Icon

Table 3. Geometry of the optimized amplifier.

Figure 11 illustrates the distribution of the electric field norm for the fundamental signal mode WGM194,1,1 and the fundamental waveguide mode with gs = 4.3 µm for the passive device.

 figure: Fig. 11

Fig. 11 Distribution of the electric field norm for the fundamental signal mode WGM194,1,1 and the fundamental waveguide mode with gs = 4.3 µm.

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4. Active structure design

The FEM solver is used to simulate the micro-disk WGMs and the waveguide propagation modes by considering the geometrical parameters of Table 3. In the simulations, the fundamental mode WGM194,1,1 at the signal wavelength λs = 4700 nm is considered. Moreover, the first seven WGMs are considered at the pump wavelength λp = 1550 nm. The signal gain is maximized by exploiting different pump modes in order to increase the interaction between pump and rare earth, in order to generate/amplify the signal [35]. Table 4 reports the parameters of the simulated modes.

Tables Icon

Table 4. WGM characteristics at signal and pump wavelengths.

The output signal power Poutsignal versus the distance gp between micro-disk and pump waveguide is simulated for the input signal power Pinsignal=30dBm and input pump power Pinpump=100mW, praseodymium concentration CPr = 3000 ppm and distance between micro-disk and signal waveguide gs = 4.45 µm. By increasing the distance gp between micro-disk and pump waveguide, an almost constant and maximized signal power Poutsignal is simulated till gp = 350 nm. Then, for larger gp values, the output signal power Poutsignal decreases. A value gp = 200 nm is chosen.

Figure 12 depicts the maximum output signal power Pout,MAXsignal as a function of input pump power Pinpump and praseodymium concentration CPr. The simulations are performed by changing the input pump power Pinpump in the range 0.01 mW–50 mW, the distance gs between micro-disk and signal waveguide in the range 0.5 µm–5.5 µm and the praseodymium concentration CPr in the range 100 ppm–10 000 ppm. The input signal power is Pinsignal=30dBm. The maximum output signal power Pout,MAXsignal is the largest value obtained within the gs range. By increasing the input pump power Pinpump or praseodymium concentration CPr, the maximum output signal power Pout,MAXsignal increases. The increase of Pinpump or CPr yields a similar effect. The population inversion is improved and thus the output signal power Poutsignal is maximized.

 figure: Fig. 12

Fig. 12 Maximum output signal power Pout,MAXsignal as a function of input pump power Pinpump and praseodymium concentration CPr. The input pump power Pinpump varies in the range 0.01 mW–50 mW and the praseodymium concentration CPr in the range 100 ppm–10 000 ppm. The input signal power is Pinsignal=30dBm.

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Figure 13 illustrates the optical gain G, as defined in Eq. (17), as a function of distance gs between micro-disk and signal waveguide for the input pump power Pinpump=0.01mW. It is apparent that the input pump power is too weak to achieve the inversion of population. The optical gain is negative because the losses due to the light propagation in the micro-disk are predominant with respect to the gain.

 figure: Fig. 13

Fig. 13 Optical gain G as a function of distance gs between micro-disk and signal waveguide for different praseodymium concentrations. The input pump power is Pinpump=0.01mW and the input signal power is Pinsignal=30dBm.

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Figure 14 illustrates the optical gain G as a function of distance gs between micro-disk and signal waveguide for the input pump power Pinpump=50mW. For CPr = 100 ppm and CPr = 1000 ppm, the concentration is too low to have optical gain. By increasing the praseodymium concentration CPr, the input pump power activates the interaction between light and rare earth. The maximum gain is G ≈ 7.9 dB and it is obtained with CPr = 10 000 ppm and gs ≈ 4.1 µm. By increasing the concentration, the peak of the optical gain G is obtained for smaller values of the distance gs between micro-disk and signal waveguide. In fact, by increasing the ions populations, the signal absorption increases due to the transition 3H43H5. In order to compensate this larger absorption, a stronger optical coupling is needed.

 figure: Fig. 14

Fig. 14 Optical gain G as a function of distance gs between micro-disk and signal waveguide for different praseodymium concentrations. The input pump power is Pinpump=50mW and the input signal power is Pinsignal=30dBm.

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Figure 15 reports the ions populations as a function of the time t in the case of the highest gain G ≈ 7.9 dB, obtained for Pinpump=50mW, CPr = 10 000 ppm and gs = 4.1 µm. At the initial time t = 0 s, the pump signal is applied. The pump absorption at the wavelength λp ≈ 1.55 µm yields a fast decrease of the population N1 of the ground level 3H4 and an increase of the population N4 of the level (3F3,3F4). Afterwards, the spontaneous decays (radiative and non-radiative) lead to an increase of the populations N3 and N2 of levels (3H6, 3F2) and 3H5, respectively. The light emission at λs ≈ 4.7 µm is related to the transition 3H53H4 (ions populations N2 and N1).

 figure: Fig. 15

Fig. 15 Ions populations as a function of the time in the case of the highest gain: Pinpump=50mW, Pinsignal=30dBm, CPr = 10 000 ppm, gs = 4.1 µm. In t = 0 s the pump signal is applied.

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Figure 16 illustrates the laser characteristic, i.e. the output signal power Poutsignal as a function of the input pump power Pinpump, with CPr = 10 000 ppm. In the laser behavior, the maximum value of output signal power Poutsignal is obtained with gs ≈ 4.1 µm. The pump threshold is close to 0.4 mW. The slope efficiency S is defined as the ratio between the output signal power and the input pump power. The best slope efficiency is close to S = 8.1 × 10−4 in the range of input pump power from 2 mW to 6 mW. This value is about six times higher than that simulated for an optimized erbium-doped micro-disk, emitting at 4.5 µm, via the same home-made computer code, according to the results reported in [35].

 figure: Fig. 16

Fig. 16 Output signal power Poutsignal as a function of the input pump power Pinpump with CPr = 10 000 ppm and gs = 4.3 µm.

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5. Conclusion

For the first time to the best of our knowledge, the design of an amplifier based on a chalcogenide Pr3+-doped micro-disk coupled to two ridge waveguides is performed. A home-made computer code is developed to this aim. The micro-disk has a radius of 65 µm and a thickness of 1.2 µm. A very high gain G ≈ 7.9 dB is simulated for a Pr3+ concentration of 10 000 ppm, an input signal power of −30 dBm at the wavelength 4.7 µm and an input pump power of 50 mW at the wavelength 1.55 µm. In the laser behavior, the maximum slope efficiency S = 8.1 × 10−4 is obtained for Pr3+ concentration of 10 000 ppm and input pump power in the range 2 mW–6 mW. The pump threshold is 0.4 mW.

Funding

This research was performed within MIUR plans: PON01 01224 “Sviluppo di tecnologie in guida d’onda integrata (SIW) per applicazioni ICT a microonde”; PONa3 00298 “Potenziamento delle strutture e delle dotazioni scientifiche e tecnologiche del polo scientifico e tecnologico Magna Grecia”; PON02 00576 3329762 “Sistemi avanzati mini-invasivi di diagnosi e radioterapia” AMIDERHA; COST Action MP1401 Advanced Fibre Laser and Coherent Source as tools for Society, Manufacturing and Lifescience.

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Figures (16)

Fig. 1
Fig. 1 Micro-disk coupled to two ridge waveguides, one for the pump P and the other for the signal S. Ain, Aout and A are the amplitudes of electromagnetic field at the input and output waveguide sections and inside the micro-disk, respectively. τext and τ0 are the coupling and intrinsic lifetimes, respectively.
Fig. 2
Fig. 2 Four-level model of praseodymium. The most important phenomena are represented: absorption and stimulated emission (full lines), pure-radiative spontaneous decay (dashed lines) and non-radiative spontaneous decay (dash-dotted lines).
Fig. 3
Fig. 3 The praseodymium doped Pr3+:Ga5Ge20Sb10Se65 micro-disk coupled to the two waveguides made of the same glass. A buffer layer of Ga5Ge20Sb10S65 separates the micro-disk from the Si substrate.
Fig. 4
Fig. 4 Measured refractive index as a function of wavelength for Pr3+:Ga5Ge20Sb10Se65, nµdisk, and Ga5Ge20Sb10S65, nbuffer. The measurement is made by NIR and Mid-IR VASE ellipsometry.
Fig. 5
Fig. 5 Absorption coefficient α measured on Ga5Ge20Sb10Se65 un-doped fiber as a function of wavelength.
Fig. 6
Fig. 6 Calculated emission and absorption cross-sections for the Pr3+:Ga5Ge20Sb10Se65 glass.
Fig. 7
Fig. 7 Confinement factor Ω as a function of width and height for single-mode signal waveguide.
Fig. 8
Fig. 8 Distribution of the electric field norm for the fundamental mode in signal waveguide having hw = 1 µm and a) ws = 3.5 µm, b) ws = 6.5 µm.
Fig. 9
Fig. 9 Micro-disk effective refractive index neff as a function of disk thickness for λs = 4700 nm. The subscript p in TEp is the longitudinal parameter of the considered WGMm,n,p.
Fig. 10
Fig. 10 Micro-disk radius Rµdisk as a function of the resonant wavelength obtained by solving Eq. (5).
Fig. 11
Fig. 11 Distribution of the electric field norm for the fundamental signal mode WGM194,1,1 and the fundamental waveguide mode with gs = 4.3 µm.
Fig. 12
Fig. 12 Maximum output signal power P out , MAX signal as a function of input pump power P in pump and praseodymium concentration CPr. The input pump power P in pump varies in the range 0.01 mW–50 mW and the praseodymium concentration CPr in the range 100 ppm–10 000 ppm. The input signal power is P in signal = 30 dBm.
Fig. 13
Fig. 13 Optical gain G as a function of distance gs between micro-disk and signal waveguide for different praseodymium concentrations. The input pump power is P in pump = 0.01 mW and the input signal power is P in signal = 30 dBm.
Fig. 14
Fig. 14 Optical gain G as a function of distance gs between micro-disk and signal waveguide for different praseodymium concentrations. The input pump power is P in pump = 50 mW and the input signal power is P in signal = 30 dBm.
Fig. 15
Fig. 15 Ions populations as a function of the time in the case of the highest gain: P in pump = 50 mW, P in signal = 30 dBm, CPr = 10 000 ppm, gs = 4.1 µm. In t = 0 s the pump signal is applied.
Fig. 16
Fig. 16 Output signal power P out signal as a function of the input pump power P in pump with CPr = 10 000 ppm and gs = 4.3 µm.

Tables (4)

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Table 1 Refractive indices at signal and pump wavelengths measured by NIR and Mid-IR VASE ellipsometry (±0.001).

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Table 2 Spectroscopic parameters of the Pr3+:Ga5Ge20Sb10Se65.

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Table 3 Geometry of the optimized amplifier.

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Table 4 WGM characteristics at signal and pump wavelengths.

Equations (19)

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2 E y , i ( x ) x 2 = ( k i 2 γ 2 ) E y , i ( x )
tan ( ν h μ disk ) = ν ( η + χ ) ν 2 η χ
ν = n μ disk 2 k 2 γ 2 , η = γ 2 n buffer 2 k 2 , χ = γ 2 n air 2 k 2
E r ( r , φ ) = N J m ( 2 π λ r n eff r ) exp [ 2 π λ r n eff 2 n air 2 ( r a ) ] exp ( j m φ )
E r ( r , φ ) = 0 J m ( 2 π λ r n eff R μ disk ) = 0
dA P / S d t = ( 1 τ 0 P / S 2 τ ext P / S + g P / S + j Δ ω ) A P / S j 2 τ ext P / S T rtt A in P / S
κ = k 2 n μ disk 2 n air 2 2 γ w 3 E w E μ disk * d V
1 Q P / S = 1 Q abs P / S + 1 Q ss P / S + 1 Q rad P / S
Q abs P / S = 2 π n eff ζ λ r
Q ss P / S = 3 λ r 3 8 π 7 / 2 n air ( n μ disk 2 n air 2 ) ϑ V μ disk V ss
ϑ = n eff 2 ( n μ disk 2 n air 2 ) n μ disk 2 ( n eff 2 n air 2 ) , V ss = R μ disk L c h μ disk σ r
Q rad P / S = ω μ disk 2 W e P d = ω μ disk 2 W m P d
N 1 + N 2 + N 3 + N 4 = N d N 4 d t = σ P F P N 1 N 4 ( 1 T 4 + β 43 τ 4 + β 42 τ 4 + β 41 τ 4 ) = 0 d N 3 d t = N 4 ( 1 T 4 + β 43 τ 4 ) N 3 ( 1 T 3 + β 32 τ 3 + β 31 τ 3 ) = 0 d N 2 d t = σ 12 F 12 N 1 + N 4 β 42 τ 4 + N 3 ( 1 T 3 + β 32 τ 3 ) N 2 ( 1 T 2 + 1 τ 2 + σ 21 F 21 ) = 0 d N 1 d t = ( σ P F P + σ 12 F 12 ) N 1 + N 4 β 41 τ 4 + N 3 β 31 τ 3 + N 2 ( 1 T 2 + 1 τ 2 + σ 21 F 21 ) = 0
g P = c n eff N 1 σ P Γ P , g S = c n eff ( N 2 σ 21 Γ S N 1 σ 12 Γ S )
Γ P / S = Ω d | E P / S ( x , y ) | 2 d x d y
A 0 = c N 2 σ 21 Γ S h Δ ν λ r n eff 2 ε 0 A S
G = | A out S A in S | 2
ζ = α Ω μ disk | E P / S | 2 d x d y 2 | E P / S | 2 d x d y
Ω = Ω μ disk | E w | 2 d x d y 2 | E w | 2 d x d y
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