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Controlling multiple-dipole interactions mediated by nanophotonic structures and their application in W state generation

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Abstract

We investigate cooperative behavior of three and four quantum emitters coupled to a common nanophotonic structure. We theoretically demonstrate that strong dipole-dipole interaction is attainable for emitter distances on the order of the operating wavelength in a couple of judiciously designed systems, including epsilon-near-zero parallel plate waveguide, SOI microring resonator, and silicon microshell/silica core structure. We also show that a high-purity W state can be generated with high efficiency in such systems, making them promising candidates for the generation of long-range quantum entanglement between multiple qubits.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

1. Introduction

Coupling quantum emitters to a common reservoir may result in an effective dipole-dipole interaction (DDI) between them. DDIs mediated by photons, either in the range of microwaves for coupling superconducting qubits [1] or in the visible range for quantum dots [2, 3], molecules, or nitrogen vacancy centers in diamond [4], are a key element in fundamental research on light-matter interactions [5–7] and quantum information processing [8, 9]. For example, entanglement generation between quantum emitters due to DDIs has been proved in a number of environments, including left-handed materials [10], plasmonic waveguides [11], surface plasmons supported by nanowire [12, 13] or graphene [14], etc., even if emitters were initially prepared in an unentangled state. It opens the possibility of manipulating entanglement between qubits via waveguide/cavity QED setups. However, up to now only the dynamics of entanglement between two qubits induced by DDIs has been investigated in literature [10–14] while tens of entangled qubits are usually required for advanced applications such as quantum cryptography, quantum teleportation, and quantum computing [15–18]. Therefore, extending the discussion to more qubits and developing corresponding waveguide/cavity QED system is an intriguing and promising task in both quantum optics and nanophotonics.

In this paper, we study the dynamics of the single-exciton states of three and four quantum emitters coupled via DDIs and how nanophotonic structures can be exploited to control the DDIs between them. With a judicious design, long-range and efficient DDIs can be facilitated in waveguides as well as cavities, which make the three- or four-qubit W state subradiant and all the other states superradiant. In this way, all the other states decay to a negligible amount in a relatively short time and high-purity W state is left in the system. Our work proves that efficient generation and control of long-range DDIs between multiple emitters can be realized by designing proper nanophotonic structures, which will find applications in modern quantum communication and computing systems.

2. Cooperative behavior of three and four quantum emitters

The quantum systems of interest are shown in Fig. 1. Three or four identical quantum emitters such as quantum dots [19] or rare-earth ions [20] are embedded in a nanophotonic structure, as depicted in Figs. 1(a) and 1(b). Each emitter has two levels and serves as a qubit by denoting ground and excited states as|0and|1, respectively. Assuming that only one of the emitters is initially excited, all the states of interest and transitions between them are illustrated in Figs. 1(c) and 1(d).

 figure: Fig. 1

Fig. 1 Coupling of (a) three and (b) four quantum emitters through the vacuum field. Each emitter has two energy levels and can be viewed as a qubit. Scheme of the quantum states involved and transitions between them (red dashed line with double arrows) in the case of (c) three and (d) four emitters.

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The dynamics of the density matrix ρ for three or four qubits is described by a master equation [11, 12, 21]

ρ˙=i[ρ,H]+j,kγjk2(2σjρσk+σj+σkρρσj+σk)
whereσj+andσjare the raising and lowering operators for each qubit, and j, k = 1, 2, 3 (1, 2, 3, 4) for three (four) qubits. The Hamiltonian H can be written as [11, 12, 21]
H=ω0jσj+σj+j<kgjk(σj+σk+σk+σj)
where ω0 is the transition frequency. Since the emitters share the same quantum vacuum, γjk and gjk appear as the coupling coefficients between qubits due to the effective interactions between the upper levels in Figs. 1(c) and 1(d). Owing to the deep-subwavelength size of quantum emitters, they can be modeled as electric dipoles which correspond to the transition dipole matrix elements between two levels [22]. So the coupling coefficients due to DDI can be expressed in terms of dyadic Green’s function of the environmentG(ω0,rj,rk) [11,12]
γjk=2ω02ε0c2Im[μj*G(ω0,rj,rk)μk],gjk=1πε0Ρ0ω2Im[μj*G(ω,rj,rk)μk]c2(ωω0)dω
Here, γjk is the dissipative coupling coefficient that describes the variation on the radiative decay, while gjk is the coherent coupling coefficient describing the frequency shift of atomic transitions. For the sake of simplicity, we assume that all the quantum emitters and interactions between dipoles are equal, i. e., γjj = γkk = γ0, γjk = γkj = γi and gjk = gkj = g. We also introduce some notations to simplify the expression. For instance, we use|0|000|0a|0b|0c,|1|001|0a|0b|1c,|2|010|0a|1b|0c, and|3|100|1a|0b|0cto denote the quantum states in a three-qubit system. In this way, the time evolution of a three-qubit system can be described by
ρ˙11=ig(ρ12+ρ13ρ21ρ31)γ0ρ11γi2(ρ12+ρ13+ρ21+ρ31),ρ˙22=ig(ρ21+ρ23ρ12ρ32)γ0ρ22γi2(ρ21+ρ23+ρ12+ρ32),ρ˙33=ig(ρ31+ρ32ρ13ρ23)γ0ρ33γi2(ρ31+ρ32+ρ13+ρ23),ρ00+ρ11+ρ22+ρ33=1
Considering that|1,|2and|3are equivalent due to the high symmetry of the system, we rewrite Eq. (4) in the Dicke basis, which is|W=13(|001+|010+|100), |A=12(|001|010), and|B=16(|001+|0102|100) [23]. Finally, we reach a simple and beautiful formula
ρ˙WW=(2γiγ0)ρWW,ρ˙AA=(γiγ0)ρAA,ρ˙BB=(γiγ0)ρBB,ρ00+ρAA+ρBB+ρWW=1
where the coherent mutual interaction term g disappears, the spontaneous emission rate γ0 is positive, and the noncoherent mutual interaction term γi can vary from positive to negative depending on the relative phase between dipoles. To make sure that the populations of W, A and B states don’t increase to infinity with time, it requires that2γiγ0,γiγ00, which leads toγ0/2γiγ0. It is worth mentioning that this relation holds in all kinds of environments, as long as all the emitters and interactions between them are equal. We will verify this conclusion in a couple of examples later. When γi is negative, the W state becomes subradiant while the A and B states are superradiant. In particular, whenγi=γ0/2, the population of W state remains constant over time. Since the quantum emitters are spatially separated, we can excite only one emitter initially. Owing to the DDIs between emitters, the A and B states decay rapidly compared to the W state. In other words, high-purity W state will be obtained after the short lifetime of A and B states. The Dicke basis for a four-qubit system is|W=14(|0001+|0010+|0100+|1000),|A=12(|0001|0010),|B=16(|0001+|00102|0100), and|C=112(|0001+|0010+|01003|1000) [23]. Similar to a three-qubit system, the time evolution of W, A, B, C and vacuum states in a four-qubit system can be expressed by
ρ˙WW=(3γiγ0)ρWW,ρ˙AA=(γiγ0)ρAA,ρ˙BB=(γiγ0)ρBB,ρ˙CC=(γiγ0)ρCC,ρ00+ρAA+ρBB+ρCC+ρWW=1
where the constraint on the noncoherent mutual interaction term γi now becomesγ0/3γiγ0. It is also valid for all kinds of environments provided that the emitters are equivalent in all ways.

The requirement of identical DDIs between quantum emitters can be met by using highly symmetric configurations. As depicted in Figs. 2(a) and 2(b), three emitters are located at the vertices of an equilateral triangle while their dipole orientations are either along the medians of the triangle [Fig. 2(a)] or perpendicular to the plane of the triangle [Fig. 2(b)]. In the latter case, when the distance between emitters decreases to zero,γi=γ0and Eq. (5) becomes the description of Dicke superradiance [24]. The configuration of four emitters is unique as illustrated in Fig. 2(c). Four emitters are located at the vertices of a regular tetrahedron with their dipole orientations along the medians of the tetrahedron. In the following section, we will put these configurations into various nanophotonic structures to manipulate the DDIs between qubits and the collective spontaneous emissions of entangled states. But before we proceed, we would like to study the scenario of free space first to get an intuitive view of DDI. The dyadic Green’s function in free space or homogeneous environments has an analytical expression [25]

G(r0+r,r0)=eikr4πr[(1+ikr1k2r2)I+33ikrk2r2k2r2rrr2]
where r is the displacement between detection point and dipole position r0, k is the wavenumber in space, andIis the unit dyad. Substituting into Eq. (3), we derive the relationship between the mutual interaction γi and the dipole-dipole distance r in free space. The DDIs for the configurations in Figs. 2(a), 2(b) and 2(c) are shown in Fig. 2(d) as a red, blue and green solid line, respectively. Obviously, for a three-qubit system γi/γ0 falls in[12,1]while for a four-qubit system the interval is narrowed down to[13,1]. More importantly, the envelope of γi gets close to zero within a distance comparable to the free space wavelength λ0. Although exciting multiple emitters initially is very inefficient for entanglement generation [26], the fast drop in mutual interaction strength at long distances hinders us from placing emitters apart and exciting them individually. Therefore, it is necessary to develop nanophotonic architectures to mediate long-range DDIs and achieveγi/γ0=12and13between separate emitters for three- and four-qubit W state generation.

 figure: Fig. 2

Fig. 2 Configurations of three quantum emitters with their dipole orientations (a) in and (b) out of the plane of equilateral triangle. (c) Configuration of four quantum emitters with equal DDIs. (d) Noncoherent mutual interaction strength in free space (normalized to individual spontaneous emission rate) as a function of dipole-dipole distance (normalized to free space wavelength). The red, blue and green solid lines correspond to the configurations in Figs. 2(a), 2(b) and 2(c), respectively.

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3. Parallel plate waveguide for three-dipole interaction

We propose a parallel plate waveguide (PPW) consisting of an air gap inside perfect electric conductor (PEC) or silver, as illustrated in Fig. 3(a). Three quantum emitters are placed in the middle of the gap. For the three-dipole configuration in Fig. 2(a), they couple to the TE mode supported by PPW which exhibits epsilon-near-zero (ENZ) behavior at the cut-off wavelength. The zero propagation constant in PPW eliminates the oscillation effect in γi caused by the term eikr in Eq. (7) while the confinement in the z direction slows down the speed at which the envelope of γi approaches zero. In this manner, strong DDI can be achieved in a range comparable to λ0. Hereafter, we use finite-difference time domain (FDTD) techniques to calculate the noncoherent mutual interaction term γi in various nanophotonic structures. The red solid line in Fig. 3(b) shows the DDI in a PPW composed of PEC with the air gap width d = λ0/2. Obviously, the PPW works in the ENZ regime where γi has no oscillation and a long interaction distance. The ENZ nature can also be acquired in a PPW composed of silver at visible or near-infrared frequencies. Due to the penetration depth into silver, the ENZ wavelength is longer than 2d, e. g., λ0 = 760 nm for d = 340 nm. The blue dashed and green dotted lines in Fig. 3(b) show the DDIs in silver PPWs operating in the ENZ and propagating regime, respectively. As a result of silver losses, γi decays faster in the ENZ waveguide than its PEC counterpart. However, γi/γ0 = −0.4 can still be obtained at r = λ0 in the ENZ waveguide, much better than in the propagating waveguide where the DDI is further weakened by the oscillation. In Fig. 3(c), we plot the phase progression in the ENZ waveguide made of silver. As expected, only a small phase advance is observed over several wavelengths. For the three-dipole configuration in Fig. 2(b), the quantum emitters couple to the TM mode supported by PPW which exhibits no cut-off no matter how narrow the air gap is. The DDIs between z-oriented dipoles are displayed in Fig. 3(d) using the same waveguide parameters as in Fig. 3(b). Strong oscillations emerge as a consequence of the propagation effect while slight variations in phase exist between different waveguides. In summary, PPW can be used to extend the interaction distance between the embedded emitters when operating in the ENZ regime. Unfortunately, the scheme only works for the three-dipole configuration drawn in Fig. 2(a).

 figure: Fig. 3

Fig. 3 (a) Schematic of three dipoles placing in a PPW composed of PEC or silver. The width of the air gap is denoted as d. The cross section of the system in the YOZ plane is shown in the inset. (b) Noncoherent mutual interaction strength in PPW (normalized to individual spontaneous emission rate) as a function of dipole-dipole distance (normalized to free space wavelength). The dipole configuration is illustrated in Fig. 2(a). The red solid, blue dashed and green dotted lines represent the PEC ENZ, silver ENZ and silver propagating operation, respectively. (c) Phase progression of the in-plane electric field in the XOY plane of a silver PPW operating at its ENZ wavelength. The orientation of the dipole is indicated in the figure. (d) Counterpart of Fig. 3(b) with z-oriented dipoles. The configuration is shown in Fig. 2(b). All the waveguide parameters are the same as in Fig. 3(b).

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4. SOI microring resonator for three-dipole interaction

In free space or PPW, the electromagnetic field radiated by a quantum emitter will disperse to infinity eventually. The field intensity has to decrease with distance to preserve the total energy, which results in the weakening of DDI at a long distance. An effective way to mediate DDI while maintaining its strength is to use low-loss waveguides [11–13] or high-Q cavities [27–29]. Here, we propose a system of three quantum emitters embedded in a SOI microring resonator, which is schematically depicted in Fig. 4(a). The equilateral triangle connecting three dipoles is inscribed in the ring. The radius of the ring R is much bigger than its width w so that we can neglect the difference between inner and outer radii and treat the ring as a bent waveguide with the same width w and height h. Assuming that the transition frequency of quantum emitter is in resonance with the microring resonator, the tangential wavenumber of ring mode k satisfiesk2πR=n2π, where n can be any integer. The noncoherent mutual interaction between dipoles γi now depends on the interference between clockwise- and counterclockwise-propagating waves and reads [11]

γi=γ0βeαrcos(kπR)cos(kπRkr)
where β is the β factor of individual emitter, α is the decay coefficient of propagation due to material and bend losses, and r is the length of the arc connecting two adjacent emitters. To elucidate the physics that affects the DDI in the microring, we first consider the ideal case where β = 1, α = 0, andr=2πR3. Then the noncoherent mutual interaction term is simplified toγi=γ0cos(nπ)cos(nπ3), which gives rise toγi=γ0if n is a multiple of three andγi=γ0/2if not. Therefore, we can attainγi=γ0/2at desired wavelengths via tuning the geometry of SOI microring, which would benefit the generation of three-qubit W state.

 figure: Fig. 4

Fig. 4 (a) Schematic of three dipoles embedded in a SOI microring resonator. The ring radius, width and height are R, w and h, respectively. Mode profile in (b) the microring designed for the configuration in Fig. 2(a) and (c) the counterpart microring designed for the configuration in Fig. 2(b). The dipole orientations are indicated in the figures. (d) Spectrum of the noncoherent mutual interaction strength γi/γ0 (red dashed line) and Purcell factor (blue solid line) in the SOI microring resonator shown in Fig. 4(b). (e) Counterpart of Fig. 4(d) but in the SOI microring resonator shown in Fig. 4(c).

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For the configuration in Fig. 2(a), the parameters of microring are designed as follows: R = 5 μm, w = 500 nm and h = 250 nm. The electric field profile in the corresponding bent waveguide is shown in Fig. 4(b). The horizontal component is dominant in this mode, which leads to good couplings with the transition dipoles of quantum emitters. The DDI and Purcell factor are displayed in Fig. 4(d) around λ0 = 1.5 μm. The peaks in the Purcell factor appear at 1.48, 1.50 and 1.52 μm, which correspond to the microring resonances with n = 52, 51 and 50, respectively. As predicted, γi/γ0 reaches −0.486, 0.981 and −0.475 at 1.48, 1.50 and 1.52 μm. The discrepancy from the ideal value of −0.5 and 1 happens because the β factor is less than unity and the material and bend losses are finite in the system. For the configuration in Fig. 2(b), a similar device can be used to facilitate long-range DDIs. The parameters of microring are modified as: R = 5.625 μm, w = 250 nm and h = 500 nm. As shown in Fig. 4(c), the mode profile derived in the corresponding bent waveguide resembles that in Fig. 4(b) except for a rotation of 90 degrees. So now the vertical component becomes principal and couples well with the z-oriented dipoles. Moreover, the microring width w is reduced by half compared to our previous design, making it more vulnerable to bends. This feature is reflected in the DDI and Purcell factor drawn in Fig. 4(e). The Purcell factor peaks at 1.50, 1.52 and 1.54 μm, corresponding to the microring resonances with n = 58, 57 and 56. Their values are much smaller than those in Fig. 4(d), which is attributed to the higher bending loss and hence lower Q factor of the cavity. It also weakens DDI as γi/γ0 now equals to −0.432, 0.957 and −0.436 at the resonance wavelengths and the peaks and dips are much wider than those in Fig. 4(d). However, strong DDI can still be observed between emitters separated by several wavelengths. In essence, SOI microring resonator is an excellent platform for long-range and nearly undamped DDIs between three dipoles in both configurations.

5. Silicon microshell/silica core structure for four-dipole interaction

The idea of using SOI microring to mediate long-range DDI can be extended to higher dimensions, giving rise to the silicon microshell/silica core architecture plotted in Fig. 5(a). The configuration of four quantum emitters is arranged as in Fig. 2(c), with the regular tetrahedron inscribed in the shell. Since the emitters are embedded in the shell layer which has a higher refractive index than the core, the energy radiated by emitters would be confined in silicon, rendering strong DDIs between distant emitters. The parameters of the shell/core structure are designed as follows: the radius of the core sphere R = 1 μm and the thickness of the shell t = 250 nm. The DDI and Purcell factor in the structure are displayed in Fig. 5(b) around λ0 = 1.56 μm. Three resonant modes are found at 1.564, 1.566 and 1.569 μm where the Purcell factor peaks and γi/γ0 reaches its extrema of −0.076, 0.937 and −0.285. It is also evident that a higher Purcell factor is always related to a stronger DDI, i. e., γi/γ0 is closer to −0.5 or 1and the peak or dip is narrower. It can be explained as follows: disregarding the minor variation of mode volume, the high Purcell factor results from the low loss and thus high Q factor of the mode, which will also lead to the nearly non-fading DDI in a long distance. As a result, the silicon microshell/silica core structure is verified to be a promising candidate for mediating and manipulating DDIs between four quantum emitters.

 figure: Fig. 5

Fig. 5 (a) Schematic of four dipoles embedded in the silicon microshell layer on the silica core. The core sphere radius is R, and the thickness of shell layer is t. The dipole orientations are indicated in the figure. (b) Spectrum of the noncoherent mutual interaction strength γi/γ0 (red dashed line) and Purcell factor (blue solid line) in the silicon microshell/silica core structure. The configuration of four dipoles is shown in Fig. 2(c).

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6. Demonstration of W state generation

To prove the feasibility of controlling DDIs with nanophotonic structures for W state generation, we choose the three-qubit system in Fig. 4(d) and suppose that the transition frequency of emitters matches the resonant frequency of n = 52 eigen mode of the SOI microring resonator. Also, we assume that initially only one of the emitters is excited, e. g., ρ11=1,ρ00=ρ22=ρ33=0(ρ00=0,ρAA=12,ρBB=16,ρWW=13). Given the strong DDIs in this case, i. e., γi/γ0 = −0.486, the time evolution of the state populationsρWWandρAA+ρBBas well as the purity of W stateP=ρWW/(ρWW+ρAA+ρBB)is plotted in Fig. 6(a). Despite thatρAA+ρBBis the double ofρWWat the initial time, it decays very fast to less than 0.01 within a time of3γ01whileρWWdrops only by 8.05% in that time, resulting in a high purity of W state of 97.54%. The purity can rise up to 99.86% in a time of5γ01whenρAA+ρBBdrops to 0.0004 andρWWis still 0.29. In Fig. 6(b), we display the purity of W state P as a function of DDI γi/γ0. The purity drops from 97.83% (99.89%) for γi/γ0 = −0.5 to 94.82% (99.51%) for γi/γ0 = −0.4 at t = 3γ0−1 (5γ0−1), indicating that relatively high purity can still be achieved with moderate DDIs at the cost of longer evolution time. More efficient W state generation is envisioned as novel nanophotonic devices are being developed to achieve extremely strong DDIs between multiple qubits. Another factor that influences the W state generation is the presence of nonradiative transition in emitters. It can be accounted for by adding the corresponding interaction term into the Hamiltonian. As a result, the term γ0 in Eqs. (4)-(6) are replaced by γ0 + γnr, where γnr is the rate of non-radiative transitions [30]. Sinceγ0/2γiγ0 (γ0/3γiγ0) for three (four) qubits, the zero decay rate of W state is no longer available in theory. Stronger DDIs are required to compensate the effect of nonradiative transitions in the W state generation. It is also worth mentioning that our scheme of W state generation can be extended to more than four emitters as long as the conditions γjj = γkk = γ0, γjk = γkj = γi and gjk = gkj = g are satisfied, which might be implemented in judiciously designed asymmetric nanophotonic structures.

 figure: Fig. 6

Fig. 6 (a) Time evolution of the state populations ρWW (red solid line) and ρAA + ρBB (blue dashed line) as well as the purity of W state P (green dashed line) . The initial state is|001and γi/γ0 = −0.486. (b) Purity of W state P as a function of noncoherent mutual interaction strength γi/γ0 at t = 3γ0−1 (red solid line) and 5γ0−1 (blue dashed line).

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7. Conclusion

In conclusion, we have studied the dynamics of three and four quantum emitters coupled via DDIs. Nanophotonic architectures such as PPW, SOI microring resonator and silicon microshell/silica core structure have also been developed to mediate long-range and strong DDIs between emitters. Numerical results show that desired γi/γ0 can be achieved on a distance scale of several free space wavelengths. Thanks to that, high-purity W state will be generated in a short time on the order of the lifetime of single emitter after we excite only one of the emitters initially. The proposed systems can serve as an ideal platform to engineer long-range DDIs between multiple quantum emitters, showing promising potential for basic research of light-matter interactions and/or quantum information processing.

Funding

National Natural Science Foundation of China (NSFC) (61671306); Fundamental Research Project of Shenzhen (JCYJ) (20160328145357990); Project funded by China Postdoctoral Science Foundation (2017M612734).

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Figures (6)

Fig. 1
Fig. 1 Coupling of (a) three and (b) four quantum emitters through the vacuum field. Each emitter has two energy levels and can be viewed as a qubit. Scheme of the quantum states involved and transitions between them (red dashed line with double arrows) in the case of (c) three and (d) four emitters.
Fig. 2
Fig. 2 Configurations of three quantum emitters with their dipole orientations (a) in and (b) out of the plane of equilateral triangle. (c) Configuration of four quantum emitters with equal DDIs. (d) Noncoherent mutual interaction strength in free space (normalized to individual spontaneous emission rate) as a function of dipole-dipole distance (normalized to free space wavelength). The red, blue and green solid lines correspond to the configurations in Figs. 2(a), 2(b) and 2(c), respectively.
Fig. 3
Fig. 3 (a) Schematic of three dipoles placing in a PPW composed of PEC or silver. The width of the air gap is denoted as d. The cross section of the system in the YOZ plane is shown in the inset. (b) Noncoherent mutual interaction strength in PPW (normalized to individual spontaneous emission rate) as a function of dipole-dipole distance (normalized to free space wavelength). The dipole configuration is illustrated in Fig. 2(a). The red solid, blue dashed and green dotted lines represent the PEC ENZ, silver ENZ and silver propagating operation, respectively. (c) Phase progression of the in-plane electric field in the XOY plane of a silver PPW operating at its ENZ wavelength. The orientation of the dipole is indicated in the figure. (d) Counterpart of Fig. 3(b) with z-oriented dipoles. The configuration is shown in Fig. 2(b). All the waveguide parameters are the same as in Fig. 3(b).
Fig. 4
Fig. 4 (a) Schematic of three dipoles embedded in a SOI microring resonator. The ring radius, width and height are R, w and h, respectively. Mode profile in (b) the microring designed for the configuration in Fig. 2(a) and (c) the counterpart microring designed for the configuration in Fig. 2(b). The dipole orientations are indicated in the figures. (d) Spectrum of the noncoherent mutual interaction strength γi/γ0 (red dashed line) and Purcell factor (blue solid line) in the SOI microring resonator shown in Fig. 4(b). (e) Counterpart of Fig. 4(d) but in the SOI microring resonator shown in Fig. 4(c).
Fig. 5
Fig. 5 (a) Schematic of four dipoles embedded in the silicon microshell layer on the silica core. The core sphere radius is R, and the thickness of shell layer is t. The dipole orientations are indicated in the figure. (b) Spectrum of the noncoherent mutual interaction strength γi/γ0 (red dashed line) and Purcell factor (blue solid line) in the silicon microshell/silica core structure. The configuration of four dipoles is shown in Fig. 2(c).
Fig. 6
Fig. 6 (a) Time evolution of the state populations ρWW (red solid line) and ρAA + ρBB (blue dashed line) as well as the purity of W state P (green dashed line) . The initial state is | 001and γi/γ0 = −0.486. (b) Purity of W state P as a function of noncoherent mutual interaction strength γi/γ0 at t = 3γ0−1 (red solid line) and 5γ0−1 (blue dashed line).

Equations (8)

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ρ ˙ = i [ρ,H]+ j,k γ jk 2 (2 σ j ρ σ k + σ j + σ k ρρ σ j + σ k )
H= ω 0 j σ j + σ j + j<k g jk ( σ j + σ k + σ k + σ j )
γ jk = 2 ω 0 2 ε 0 c 2 Im[ μ j * G ( ω 0 , r j , r k ) μ k ], g jk = 1 π ε 0 Ρ 0 ω 2 Im[ μ j * G (ω, r j , r k ) μ k ] c 2 (ω ω 0 ) dω
ρ ˙ 11 = ig ( ρ 12 + ρ 13 ρ 21 ρ 31 ) γ 0 ρ 11 γ i 2 ( ρ 12 + ρ 13 + ρ 21 + ρ 31 ), ρ ˙ 22 = ig ( ρ 21 + ρ 23 ρ 12 ρ 32 ) γ 0 ρ 22 γ i 2 ( ρ 21 + ρ 23 + ρ 12 + ρ 32 ), ρ ˙ 33 = ig ( ρ 31 + ρ 32 ρ 13 ρ 23 ) γ 0 ρ 33 γ i 2 ( ρ 31 + ρ 32 + ρ 13 + ρ 23 ), ρ 00 + ρ 11 + ρ 22 + ρ 33 =1
ρ ˙ WW =(2 γ i γ 0 ) ρ WW , ρ ˙ AA =( γ i γ 0 ) ρ AA , ρ ˙ BB =( γ i γ 0 ) ρ BB , ρ 00 + ρ AA + ρ BB + ρ WW =1
ρ ˙ WW =(3 γ i γ 0 ) ρ WW , ρ ˙ AA =( γ i γ 0 ) ρ AA , ρ ˙ BB =( γ i γ 0 ) ρ BB , ρ ˙ CC =( γ i γ 0 ) ρ CC , ρ 00 + ρ AA + ρ BB + ρ CC + ρ WW =1
G ( r 0 +r, r 0 )= e ikr 4πr [ ( 1+ ikr1 k 2 r 2 ) I + 33ikr k 2 r 2 k 2 r 2 rr r 2 ]
γ i = γ 0 β e αr cos(kπR)cos(kπRkr)
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