Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

Zi-Hui Zhang; Swee Tiam Tan; Wei Liu; Zhengang Ju; Ke Zheng; Zabu Kyaw; Yun Ji; Namig Hasanov; Xiao Wei Sun; Hilmi Volkan Demir

doi:10.1364/OE.21.017670

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Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir, "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata," Opt. Express 21, 17670-17670 (2013)

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The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].

In the recent paper on p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) proposed as a current spreading layer for InGaN/GaN light-emitting diodes [1], there is a typo in the equation of reach-through breakdown voltage in Section 3, where the term _{$W_{N}^{2}$} is mistakenly typed, as _{$W_{N}$}misses its quadratic power, and the correct form is _{$B V_{R T} = \frac{e N_{D} W_{N}^{2}}{2 ε_{r} ε_{0}}$}.

We apologize for the confusion caused by the oversight. However, this correction neither affects the conclusions nor the device physics of this paper.

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1. Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013). [CrossRef] [PubMed]

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

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Optics Express