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Observation of the four wave mixing photonic band gap signal in electromagnetically induced grating

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Abstract

For the first time, we experimentally and theoretically research about the probe transmission signal (PTS), the reflected four wave mixing band gap signal(FWM BGS) and fluorescence signal (FLS) under the double dressing effect in an inverted Y-type four level system. FWM BGS results from photonic band gap structure. We demonstrate that the characteristics of PTS, FWM BGS and FLS can be controlled by power, phase and the frequency detuning of the dressing beams. It is observed in our experiment that FWM BGS switches from suppression to enhancement, corresponding to the switch from transmission enhancement to absorption enhancement in the PTS with changing the relative phase. We also observe the relation among the three signals, which satisfy the law of conservation of energy. Such scheme could have potential applications in optical diodes, amplifiers and quantum information processing.

© 2014 Optical Society of America

1. Introduction

Four-wave mixing (FWM) is a nonlinear optical effect that generates light with different frequencies and different quantum properties. Experimental and theoretical studies show that atomic coherence of the electromagnetically induced transparency (EIT) plays a critical role in the nonlinear wave-mixing process [1–6]. Under EIT conditions FWM signals can be allowed to transmit through the atomic medium and also the fluorescence induced by spontaneous emission can be generated [7–10]. Due to the two counter propagating coupling fields, the EIT-based nonlinear schemes can be driven by traveling wave beams as well as by a standing wave (SW). The large nonlinearity was obtained in an atomic system driven by two counter propagating coupling fields which form a SW if the two counter propagating coupling fields have the same frequency [11, 12]. Interaction of the SW with the atomic coherent medium results into an electromagnetically induced grating (EIG) [13, 14], which possesses photonic band gap (PBG) structure as shown in Fig. 1(c). Such EIG has a potential use in all optical switching [15], manipulation of light propagation to create a tunable photonic band gap [16, 17].This research can also be used to make optical diodes. The idea proposed here for optical diode implementation is a photonic crystal generated from a periodic modulation of the optical properties of a medium, which leads to the formation of a band gap. Light is transmitted through the crystal if its frequency is outside the gap, but it is not transmitted if the frequency is inside the gap. Due to the Doppler Effect, the counter propagating light are blue shifted and the co-propagating light is red shifted in the reference frame of the moving photonic crystal [18]. If only one of the shifted frequencies is inside the gap optical diode is formed. Optical non reciprocity of cold atom Bragg mirrors in motion may also be used to make optical diode [19].

 figure: Fig. 1

Fig. 1 (a) Four-level energy system. (b) Schematic of an EIG formed by two coupling beams E3 and E′3. Together with the dressing field E2 and probe field E1, a dressed FWM BGS EF will be generated according to the phase-matching condition KF = K1−K3 + K′3. (c) The setup of our experiment.

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In this paper, we investigate the optical response of hot rubidium (85Rb) atoms driven by a stationary SW coupling field and probe field, from which the PBG structure and four wave mixing band gap signal (FWM BGS) and probe transmission signal (PTS) can be obtained. For the first time we observe optically controllable PBG structure based on an EIT medium driven by a SW field. By optically controllable PBG structure not only we experimentally observe PTS, FWM BGS and Fluorescence signal (FLS), but also observe the enhancement and suppression of these signals under the double dressing effect in an inverted Y-type four level system. Furthermore by measuring the above signals we observed that they satisfy the law of conservation of energy, this information can be used to enhance any one of the signals at the cost of suppressing the others. By finding a strong relation among the signals we are able to find the optimal condition of any one of these signal which can be of interest for particular applications. One example of this is the optimized enhancement of FWM BGS may be used to make optical amplifiers. We also demonstrate that the characteristics of PTS, FWM BGS and FLS can be controlled by frequencies, powers, and relative phase of dressing fields; this information may be useful for the enhancement and modulation of the signals which highlights the signification of this research work. Optical response of medium is also examined by resorting to a set of nonlinear coupled wave equations, which is a powerful tool [20–23] for describing the nonlinear interaction of light fields in such a dressed medium and are here used to test the validity of the experiment result.

2. Basic theory and experimental scheme

2.1 Experimental setup

The experiment was implemented in a cell with rubidium (85Rb) atomic vapors at temperature of 53 °C with four energy levels consisting of 5S1/2(F = 3)(|0〉), 5S1/2(F = 2)(|3〉), 5P3/2(|1〉) and 5D5/2(|2) as shown in Fig. 1(a).The laser beams are aligned spatially as shown in Fig. 1(c). Probe laser beam E1 (frequency ω1 and wave vector k1) probes the transition |0〉 to |1〉. The two coupling laser beams E3 (ω3, k3) and 3 (ω3, k´3) with wavelength about 780.238 nm and a vertical polarization are split from an external cavity diode lasers (ECDL) connect the transition |3〉 to |1〉. The dressing laser beam E2 (ω2, k2) with wavelength of 775.978 nm and vertical polarization is from another ECDL drive an upper transition |1〉 to |2〉. The powers of E1, E3 and E3' are 2.1 mW, 13.2 mW and 8.4 mW, respectively.P2 is set to 21mW in our detuning and phase experiments. The coupling field E31 = ŷ[E3cos(ω3tk3x) + E′3cos(ω′3t + k′3x)], composed by E3 and 3, which propagates through 85Rb vapor in the opposite direction, generate a standing wave, which results into an EIG. Furthermore EIG will lead to a PBG structure as shown in Fig. 1(b). Rabi frequency of the coupling field is G31 = μ3E31, that we have|G31|2=μ2/h2[E32+E32+2E3E3cos2k3x] .The probe field E1 propagates in the same direction of 3 through the 85Rb vapors with approximately 0.3° angle between them. The dressing field E2 propagates in the opposite direction of 3 with approximately 0.3° angle between them as shown in Fig. 1(c). Generated FWM BGS and PTS are detected by a photodiode (PD1) and avalanche photodiode (PD2) detectors respectively. In addition, two fluorescence signals caused by spontaneous decay are measured. The second order FLS R0 and fourth order FLS R1 signals are generated due to the spontaneous emission from |1 to |0 and |2 to |1, respectively. The fluorescence signals are captured by another photodiode(PD3).

2.2 Basic theory

According to the energy system and Liouville pathways, the first-order and third-order density matrix elements are given as follows

ρ10(1)=iG1/(d1+|G31|2/d3+|G2|2/d2)
ρ10(3)=-iG1G3G3/[(d1+|G31|2/d3+|G2|2/d2)2d3]
whered1=iΔ1+Γ10,d2=i(Δ1+Δ2)+Γ20, d3=i(Δ1-Δ3)+Γ30and |G31|2 = |G3|2 + |G3′|2 + 2G3G3′cos(2k3x). Gi=μiEi/is the Rabi frequency with transition dipole moment μi, Δi=Ωi-ωi (Ωi is the resonance frequency of the transition driven byEi) and Γij is transverse relaxation rate between |i〉 and |j〉. An additional phase factor eiΔφ can be introduced into the dressing term |G2|2/d2 by means of altering the incident angle of E2 [24] in which way the relative phase Δφ related with the orientations of induced dipole moments μ1 and μ2 could be manipulated and Eqs. (1)-(2) can be modified as follows:
ρ10(1)=iG1/(d1+|G31|2/d3+|G2|2eiΔφ/d2)
ρ10(3)=-iG1G3G3(d1+|G31|2/d+3|G2|2eiΔφ/d2)2(d3)
According to the relation ε0χE = Nμρ, in which μ is the transition electric dipole moment and N is the atoms density, we have formulas for the first and third order susceptibility as follows.
χ(1)=iNμ2hε01d1+|G31|2/d3+|G2|2/d2
χ(3)=-iNμ2hε01(d1+|G31|2/d3+|G2|2/d2)2d3
In order to estimate the reflection efficiency, we start from the nonlinear coupled wave equations,
E1(x)/x=αE1(x)+keiΔkxxEF(x)
EF(x)/x=αEF(x)+keiΔkxxE1(x)
Where E1(x) and EF(x) represents the probe and FWM BGS fields, respectively, α = (ω1/c)Imχ´(1) /2 is the attenuation of the field due to the absorption of the medium and k = i(ω1/c)χ´(3)/2 is the gain due to the nonlinear susceptibility. χ´(1) and χ´(3) are the zero order coefficients from Fourier expansion of χ(1) and χ(3), respectively. Δkx={2(ω1cosθ-ω3)+Re[χ(1)]ω1cosθ}/c is the phase mismatch magnitude, in which θ is the angle between probe E1 and E3. If length of the sample in x direction is dx, then by solving above equations, the reflected FWM BGS (R) and PTS (T) are given as
R=|1keλ2+dxeλ2dxeλ2+dx(λ1++α)1eλ2dx(λ1+α)1|2
T=|e(λ1++λ1)dx(λ1λ1+)(λ1+α)eλ1dx(λ1++α)eλ1+dx|2
Where λ1±=iΔkx/2±[(αiΔkx/2)2k2]1/2andλ2±=λ1±+iΔkx.Generally ρ11(2) related to second order FLS R0 and ρ22(4) related to fourth order FLS R1 can be obtained by solving the density-matrix equations. The fluorescence signal R0 is described by ρ00(0)E1ρ10(1)(E1)*ρ11(2) solving the coupled density-matrix equations, the expression of the singly dressed density-matrix element ρ11SD(2)(where SD stand for singly dressed) can be obtain as
ρ11SD(2)=|G1|2/[(d1+|G31|2/d3)Γ11]
the amplitude squared of which is proportional to the intensity of R0. When the beams E2 is turned on, the fluorescence process R0 doubly dressed, described by the Liouville pathway ρ00(0)E1ρ±0(1)(E1)*ρ±±(2). Therefore the expression of ρ11SD(2)can be modified as
ρ11DD(2)=|G1|2/Γ11(d1+|G31|2/d3+|G2|2/d2)
(where DD stand for doubly dressed) .For signal R1, via Liouville pathwayρ00(0)E1ρ10(1)E2ρ20(2)(E1)*ρ21(3)(E2)*ρ22(4), Same way we can obtain the density-matrix element ρ22(4)as follows
ρ22(4)=|G1|2|G2|2/(Γ22d1d2d4)
where d4=Γ21+iΔ2, the amplitude squared of ρ22(4)is proportional to the intensity of R1. By considering the dressing effect of E2, the dressed fluorescence process R1 is given as
ρ22DD(4)=|G1|2|G2|2/[Γ22d1d4(d2+|G2|2/d1]
By changing angle of E2, an additional phase factor eiΔφ can be introduced into the dressing term |G2|2/d2, it is obvious that the dressing effect can be modulated by manipulating the relative phase Δφ, and so the switch between bright and dark states could be achieved. By means of altering the incident angle of E2, Eqs. (12), (14) can be modified as follows.
ρ11DD(2)=|G1|2/Γ11(d1+|G31|2/d3+|G2|2eiΔφ/d2)
ρ22DD(4)=|G1|2|G2|2/[Γ22d1d4(d2+|G2|2eiΔφ/d1]
The system obeys law of conservation of energy, according to which
R+T+IR0=Iin
where Iin is intensity of the incident probe, IR0 is intensity of fluorescence signal R0, R is reflected four wave mixing band gap signal and T is the transmission of probe signal.

The condition of generating PBG structure is that the medium should have a periodic refractive index. According the relation of the refractive index with the susceptibility, i.e., n=1+Re(χ), in order to get the periodic refractive index, the susceptibility should also be periodic. Further we should generate the periodic energy level structure for getting the periodic susceptibility. Hence, by introducing periodic standing wave field E31, we can obtain the periodic energy levels as shown in Fig. 2. In Figs. 2(a1)-2(a3), the level |1 will be split into two dressed states |G31± depending on ∆3 and |G31|2. The two dressed states |G31± have the Eigenvalues λ|G31±=Δ/32±Δ32/4+|G31|2. Since |G31|2 is periodic along x-axis, so λ|G31± values are also periodic along x. Thus we can obtain the periodic energy levels as shown in Fig. 2(b1)-2(b3). When the probe reaches two-photon resonance Δ13 = 0, absorption will be suppressed, i.e. the PTS becomes strong. At the same time, the FWM BGS will be suppressed correspondingly. Thus, we define Δ13 = 0 as the suppression condition.

 figure: Fig. 2

Fig. 2 (a1)-(a3) the single dressed energy level schematic diagrams and (b1)-(b3) the calculated single dressed periodic energy levels with changing Δ3. (c1)-(c5) the double dressed energy level schematic diagrams and (d1)-(d5) the calculated double dressed periodic energy levels with changing Δ2.

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When E2 is turn on, |G31 + 〉 is further split into two dressed states |G31 + G2 ± 〉 due to the second level dressing effect of E2, moreover |G31+G2± move with changing Δ2 as shown in Fig. 2(c1)-2(c2).The two dressed states |G31+G2± have the Eigenvalues λ|G+31G±2=-Δ3+Δ32+4|G31|22+Δ2"±Δ2"2+4|G2|22 with Δ2"2-{-Δ+3Δ32+4|G31|2}/2.The same way |G31- is further dressed into two second level dressed states|G31-G2± as shown in Fig. 2(c4)-2(c5), the Eigenvalues of which are λ|G31G±2=-Δ3Δ32+4|G31|22+Δ2'±Δ2'2+4|G2|22, where Δ2'2-{-Δ3Δ32+4|G31|2}/2. .In Fig. 2(c3), because of three photon resonance with Δ=1Δ=2Δ3 only two dressed states appear. Thus we also obtain the double dressed periodic energy levels as shown in Fig. 2 (d1)-2(d5).

3. Results and discussions

First, we observed the PTS, FWM BGS and FLS when we scan the probe frequency detuning Δ1. When E2 is blocked in Fig. 3(a1), there is a Doppler absorption background at the single-photon resonant condition Δ1 = 0 due to the term d1 = Γ10 + iΔ1 in ρ10(1)and small PTS peak caused by the dressing effect of E3 (E´3) according to the term |G31|2/d3 in Eq. (1). When E2 beam is on, due to the dressing term |G2|2/d2 in ρ10(1) of Eq. (1), the energy level |1 can be dressed to influence PBG structure so that the PTS increases as shown in Fig. 3(a2). The PTS reaches maximum at Δ1 = Δ3 = - Δ2 due to double dressing effect of E2 and E3 (E´3) according to ρ10(1). In Fig. 3(b1) the emission peak is FWM BGS give by R in Eq. (9) which is from the reflection of the PBG structure. With E2 on, the FWM BGS will be suppressed due to the dressing effect of E2 according to |G2|2/d2 in ρ10(3)as shown in Fig. 3(b2). Suppression condition is Δ1 + Δ2 = 0. In Fig. 3(c1), the profile curve represents the second order FLS R0 related to ρ11(2). The small dip in the profile curve is induced by the dressing fields E3 and 3, which appear at Δ1 = Δ3 according to |G31|2/d3 in ρ11SD(2). When E2 is turn on, a narrow emission peak appears in the profile curve shown in Fig. 3(c2), which is the fourth order FLS R1 related to ρ22(4).Compared to Fig. 3(c1) the dip becomes deeper because of the double dressing effect of E2 and E3 (3) according to ρ11DD(2). Compared Figs. 3(a1)-3(c1) with Figs. 3(a2)-3(c2), due to the dressing effect of E2, the intensity of PTS increases and the intensities of FWM BGS and FLS R0 decrease, and the whole energy is conserved according to Eq. (17).

 figure: Fig. 3

Fig. 3 Measured (a) PTS, (b) FWM BGS and (c) FLS versus Δ1 from −100 MHz to 100 MHz when different beams are blocked. (a1)-(c1) E2 blocked with Δ3 = 10 MHz and (a2)-(c2) no beam blocked with Δ2 = −10 MHz and Δ3 = 10 MHz.

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Furthermore, we observe second level dressing effect on PTS, FWM BGS and FLS by scanning Δ2, at different discrete values of Δ1. Figure 4(a1) represents the second level dressed PTS. The profile (dashed curve) of these PTS baselines shows Doppler absorption background with a peak on it. The profile peak is the intensity of single-dressed PTS induced by E3 and E3', which appear at Δ1 = Δ3 according to |G31|2/d3 of ρ10(1) in Eq. (1). In each sub curve, the peak on the baseline stands for the enhanced PTS induced by the second level dressing effect of E2, which meets Δ2 = -Δ1 according to the dressing term |G2|2/d2in Eq. (1). The total PTS reaches maximum at Δ2 = -Δ1 = -Δ3. In Fig. 4(b1), profile (dashed curve) of the baselines shows the FWM BGS related to R in Eq. (9) from reflection of the PBG structure. Dip in each sub curve shows that FWM BGS is suppressed due to the dressing effect of E2 at Δ2 = -Δ1 according to |G2|2/d2 of ρ10(3) in Eq. (2). The deepest dip appears at Δ2 = -Δ1 = -Δ3 corresponding to the total strongest PTS. In Fig. 4(c1), the profile(dashed curve) of the baselines is the second order FLS R0 signal suppressed by E3 and E′3 and it reaches minimum at Δ13 = 0 due to the term |G31|2/d3 in Eq. (12). In each sub curve, the peak is the fourth order FLS R1 related to ρ22(4), and it reaches the smallest one at Δ1 = 0 because of the strongest dressing effect of E2 according to |G2|2/d1 of ρ22DD(4) in Eq. (14) as shown in Fig. 4(c3).

 figure: Fig. 4

Fig. 4 Measured (a1) PTS, (b1) FWM BGS and (c1) FLS versus Δ2, when we select five different discrete values of Δ1 as black(−47 MHz), red(−23 MHz), blue(0 MHz), pink(28 MHz) and green(47 MHz) and Δ3 = 0 MHz. (a2), (b2) and (c2) are the theoretical calculations of (a1), (b1) and (c1), respectively.

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Next, we observe the power dependences of the PTS, FWM BGS and FLS versus Δ2. Variations in the three types of signals are shown from bottom to top with increasing power of E2 (P2) as shown in Figs. 5(a)-5(c). In Fig. 5(a), the baselines of the signals represent the intensity of the PTS induced by E3 (E´3). Peaks in the baselines at Δ1 = Δ3 shows the enhancement of the PTS induced by the second level dressing effect of E2.Changing P2 from small to large values, the peaks becomes higher due to the dressing term |G2|2/d2 in ρ10(1) of Eq. (1). The FWM BGS signal intensity is shown by the baselines in Fig. 5(b). Dip in the baseline shows suppression of reflected FWM BGS signal because of the second level dressing effect of E2 according to the dressing term |G2|2/d2 in ρ10(3) of Eq. (2). The dip is shallow at small values of power and become deeper with increasing P2 due to the enhanced dressing effect of E2.In Fig. 5(c), the baselines represent the second order FLS R0 suppressed by E3. By changing P2 from small to large values the dip change from shallow to a deeper one because of the enhanced dressing effect of E2. Variation of the dips shows that R0 are further suppressed by E2 according to the term |G2|2/d2 in ρ11DD(2) of Eq. (12). R0 signal with the deepest dip correspond to the FWM BGS with deepest dip and PTS with higher peak. Peaks in the baseline are R1 related to ρ22DD(4), which become higher with increasing the power of the dressing field E2. By observing these three signals we conclude, with the PTS increasing, the FWM BGS and FLS R0 decrease to ensure the conservation of energy according to Eq. (17).

 figure: Fig. 5

Fig. 5 Measured (a) PTS, (b) FWM BGS and (c) FLS versus Δ2 from −120 MHz to 120 MHz with Δ3 = Δ1 = 0, when we set the power of E2 (P2) from bottom to top as (1) 9.2 mW, (2) 13.0 mW, (3) 17.1 mW, (4) 21.6 mW, (5) 25.7 mW, respectively.

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Finally, we regulate the PTS, FWM BGS and FLS with the relative phase of E2 (Δφ) by changing its incident angle. The experimental results can be obtained by scanning Δ2 with Δ1 = 0 as shown in Figs. 6(a)-6(c). With the relative phase Δφ changing from -π/3to 2π/3, the PTS in Fig. 6(a) can be switched from a dip to a peak due to the change of dressing effect of E2 according to ρ10(1) . The peaks stand for the transmission enhancement of probe signal and the dips stand for the absorption enhancement of the PTS. During this process, the deepest dip and the highest peak separately appear at Δφ = 2π/3and Δφ = π/6, respectively. In Fig. 6(b) and Fig. 6(c) where Δφ is altered from -π/3 to 2π/3, a change from shallow to deep then to shallow occurs due to the regulating of the relative phase Δφ. With the variation of the dressing effect of G2 caused by Δφ, the deepest suppression dips in FWM BGS and R0 appear at Δφ = π/6 which corresponds to the strongest PTS peak. Compared with the signals at the reference phase Δφ = 0, the FWM BGS and R0 can be suppressed, i.e. the suppression dip become deeper, with Δφ changed as π/6. And the FWM BGS and R0 can be enhanced, i.e. the suppression dip become shallower, with Δφ changed as -π/3 and 2π/3. These variations are because of the switch of the dressing effect caused by regulating the relative phase Δφ according to the term |G2|2eiΔφ/d2 in Eqs. (3)-(4) and Eqs. (15)-(16). The controllable enhancement of FWM BGS may be used to make optical amplifiers.

 figure: Fig. 6

Fig. 6 Measured (a) PTS, (b) FWM BGS and (c) FLS versus Δ2 with Δ1 = Δ3 = −120 MHz, when we change the relative phase of E2 as 2π/3, π/3, 0, π/6 and π/3, respectively.

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4. Conclusion

In summary, the single-dressed and double-dressed PTS, FWM BGS and FLS are compared for the first time to deeply comprehend the double-dressing effect on the PBG. We experimentally and theoretically demonstrated that, PTS and FWM BGS and FLS can be manipulated by multiple parameters like, changing power, detuning and relative phase of incident beams. We also observed, the three types of signals satisfy law of conservation of energy. Such research could find its applications in optical amplifiers and quantum information processing.

Acknowledgments

This work was supported by the 973 Program (2012CB921804), NSFC (61108017, 11474228, 61308015, 11104214, 11104216, 61205112), KSTIT of Shaanxi Province (2014KCT-10), NSFC of Shaanxi Province (2014JZ020), KLP of Shaanxi Province (2013SZS04-Z02), FRFCU (2012jdhz05, xjj2012080), and CPSF (2014M560779).

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Figures (6)

Fig. 1
Fig. 1 (a) Four-level energy system. (b) Schematic of an EIG formed by two coupling beams E3 and E′3. Together with the dressing field E2 and probe field E1, a dressed FWM BGS EF will be generated according to the phase-matching condition KF = K1−K3 + K′3. (c) The setup of our experiment.
Fig. 2
Fig. 2 (a1)-(a3) the single dressed energy level schematic diagrams and (b1)-(b3) the calculated single dressed periodic energy levels with changing Δ3. (c1)-(c5) the double dressed energy level schematic diagrams and (d1)-(d5) the calculated double dressed periodic energy levels with changing Δ2.
Fig. 3
Fig. 3 Measured (a) PTS, (b) FWM BGS and (c) FLS versus Δ1 from −100 MHz to 100 MHz when different beams are blocked. (a1)-(c1) E2 blocked with Δ3 = 10 MHz and (a2)-(c2) no beam blocked with Δ2 = −10 MHz and Δ3 = 10 MHz.
Fig. 4
Fig. 4 Measured (a1) PTS, (b1) FWM BGS and (c1) FLS versus Δ2, when we select five different discrete values of Δ1 as black(−47 MHz), red(−23 MHz), blue(0 MHz), pink(28 MHz) and green(47 MHz) and Δ3 = 0 MHz. (a2), (b2) and (c2) are the theoretical calculations of (a1), (b1) and (c1), respectively.
Fig. 5
Fig. 5 Measured (a) PTS, (b) FWM BGS and (c) FLS versus Δ2 from −120 MHz to 120 MHz with Δ3 = Δ1 = 0, when we set the power of E2 (P2) from bottom to top as (1) 9.2 mW, (2) 13.0 mW, (3) 17.1 mW, (4) 21.6 mW, (5) 25.7 mW, respectively.
Fig. 6
Fig. 6 Measured (a) PTS, (b) FWM BGS and (c) FLS versus Δ2 with Δ1 = Δ3 = −120 MHz, when we change the relative phase of E2 as 2π/3 , π/3 , 0, π/6 and π/3 , respectively.

Equations (17)

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ρ 10 (1) =i G 1 /( d 1 + | G 31 | 2 / d 3 +| G 2 | 2 / d 2 )
ρ 10 (3) =-i G 1 G 3 G 3 /[ ( d 1 +| G 31 | 2 / d 3 +| G 2 | 2 / d 2 ) 2 d 3 ]
ρ 10 (1) =i G 1 /( d 1 +| G 31 | 2 / d 3 +| G 2 | 2 e iΔφ / d 2 )
ρ 10 (3) = -i G 1 G 3 G 3 ( d 1 +| G 31 | 2 /d + 3 | G 2 | 2 e iΔφ / d 2 ) 2 ( d 3 )
χ (1) = iN μ 2 h ε 0 1 d 1 +| G 31 | 2 / d 3 +| G 2 | 2 / d 2
χ (3) =- iN μ 2 h ε 0 1 ( d 1 +| G 31 | 2 / d 3 +| G 2 | 2 / d 2 ) 2 d 3
E 1 (x)/x=α E 1 (x)+k e iΔ k x x E F (x)
E F (x)/x=α E F (x)+k e iΔ k x x E 1 (x)
R= | 1 k e λ 2 + d x e λ 2 d x e λ 2 + d x ( λ 1 + +α) 1 e λ 2 d x ( λ 1 +α) 1 | 2
T= | e ( λ 1 + + λ 1 ) d x ( λ 1 λ 1 + ) ( λ 1 +α) e λ 1 d x ( λ 1 + +α) e λ 1 + d x | 2
ρ 11SD (2) = | G 1 | 2 /[( d 1 + | G 31 | 2 / d 3 ) Γ 11 ]
ρ 11DD (2) = | G 1 | 2 / Γ 11 ( d 1 + | G 31 | 2 / d 3 + | G 2 | 2 / d 2 )
ρ 22 (4) = | G 1 | 2 | G 2 | 2 /( Γ 22 d 1 d 2 d 4 )
ρ 22DD (4) = | G 1 | 2 | G 2 | 2 /[ Γ 22 d 1 d 4 ( d 2 + | G 2 | 2 / d 1 ]
ρ 11DD (2) = | G 1 | 2 / Γ 11 ( d 1 + | G 31 | 2 / d 3 + | G 2 | 2 e iΔφ / d 2 )
ρ 22DD (4) = | G 1 | 2 | G 2 | 2 /[ Γ 22 d 1 d 4 ( d 2 + | G 2 | 2 e iΔφ / d 1 ]
R+T+ I R 0 = I in
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