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Multi-port admittance model for quantifying the scattering response of loaded plasmonic nanorod antennas

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Abstract

In this paper we demonstrate the feasibility of using multiport network theory to describe the admittance properties of a longitudinally loaded plasmonic nanorod antenna. Our analysis reveals that if the appropriate terminal ports are defined across the nanorod geometry then the corresponding voltage and current quantities can be probed and thus it becomes feasible to extract the admittance matrix of the structure. Furthermore, it is demonstrated that by utilizing cylindrical dielectric waveguide theory, closed form expressions can be derived that uniquely characterize the loading material in terms of its admittance. The combination of the admittance matrix information along with the load admittance expressions provides an effective methodology for computing the nanorod’s input admittance/impedance for arbitrary loading scenarios. This is important because the admittance resonances are associated with the structure’s scattering peaks which are excited by a plane wave polarized parallel to its long dimension. Subsequently, the proposed approach provides a fast and computationally efficient circuit-based methodology to predict and custom engineer the scattering properties of a loaded plasmonic nanorod without having to rely on repetitive lengthy full wave simulations.

© 2015 Optical Society of America

Corrections

Anastasios H. Panaretos and Douglas H. Werner, "Multi-port admittance model for quantifying the scattering response of loaded plasmonic nanorod antennas: erratum," Opt. Express 24, 3720-3720 (2016)
https://opg.optica.org/oe/abstract.cfm?uri=oe-24-4-3720

1. Introduction

In the past decade there has been an extensive research effort focused on the theoretical and experimental development of plasmonics and nanophotonics [1,2]. In particular, the study and development of nanoantennas has received considerable attention from the nanophotonics community since by properly engineering their radiation properties one can control light at the nanoscale [3]. Among all possible types of nanoantennas, nanorods and nanodipoles have received the most attention due to the fact that their radiation properties closely resemble those of their radio frequency and microwave counterparts, and also due to their ease of fabrication[48]. To date, all of the traditional computational electromagnetics techniques have been successfully applied for the modeling of nanoantenna systems. In addition to full wave approaches several studies have been documented dealing with the development of circuit models that would permit a more qualitative interpretation of a nanoantenna’s radiation mechanism. At the same time, from an analysis and design standpoint, these circuit models would provide a reliable solution for the fast simulation and performance prediction of a radiating nanostructure [916].

In this paper we further investigate the circuit based approach for the modeling of a nanorod type plasmonic antenna. In particular, the objective is to develop a compact circuit based framework in order to describe the radiation properties of a loaded nanorod antenna. By the term “loaded” we refer to material inhomogeneities occurring along the length of the nanorod. According to our assumptions these inhomogeneities occupy small cylindrical volumes longitudinally placed across the nanorod. Our approach treats the loaded nanorod as a multi-port network where the number of ports is determined by the number of loads. It turns out that network theory, a mainstream methodology for the analysis of microwave devices, can be successfully applied for the nanoantenna geometry under consideration here. Of particular importance for the applicability of the proposed methodology is the definition of appropriate admittance expressions for the loading volumes. For this reason we employ dielectric waveguide theory and derive useful closed-form expressions for the load admittances.

The significance of the proposed methodology is that one can very efficiently compute the input admittance of the nanorod, for any loading combination. The methodology becomes even more appealing when the loading volumes are significantly smaller than the nanorod. In such cases, where only a small part of the geometry under study may change, it becomes extremely costly and inefficient in terms of computational resources to repetitively simulate, via full-wave methods, the entire structure in order to examine the effect of different loading combinations. In addition, knowledge of an antenna’s admittance response allows its scattering signature to be predicted when the structure is excited by an incident plane wave; the admittance resonances correspond to the frequencies where the scattered field exhibits its maximum value. Throughout this paper the ejωttime convention is adopted.

2. Probing the nanorod and load admittance derivation

In this section we present the loaded nanorod geometry under study, and we further develop the necessary mathematical framework to characterize it in terms of the input admittance of the structure and its loads. For our study we are considering single- and double-loaded nanorods.

The corresponding layouts of these two structures are illustrated in Figs. 1(a) and 1(b). For both structures the length (tip-to-tip) and radius of the nanorod is 300 nm and a = 15 nm, respectively. For the single-loaded nanorod the height of the cylindrical load is equal to h = 25 nm and its center is located at z = 52.5 nm. For the double-loaded nanorod both cylindrical loads have a height of h = 25 nm while their centers are symmetrically positioned at z = 52.5 nm and z = −52.5 nm, respectively. For the modeling of these structures we exploit their symmetry and we utilize the finite element based body-of-revolution solver of COMSOL following the methodology introduced by Locatelli in [16]. The corresponding numerical models are shown in Figs. 1(c) and 1(d). For our experiments the length of the excitation gap was set equal to g = 2 nm. Along the Π-shaped boundary of the excitation gap a z-directed electric field is hard-sourced with a magnitude equal to 1 V/m. Now, in both cases the input admittance of the structure is defined with respect to the voltage and current measured at point A, and it is given by

Yin=2πaHφEzg
Obviously, the current term in the numerator of (1) corresponds to application of Ampere’s law along a loop that coincides with the nanorod’s circumference. The term in the denominator corresponds to the voltage given by the line integral of the electric field along the z-directed edge of the excitation gap, where it has been assumed that the electric field component Ez is constant along g. Note here that the field quantities in (1) are directly computed by the numerical solver.

 figure: Fig. 1

Fig. 1 (a)-(b) Single- and double-loaded nanorod geometry and probing points. The model dimensions are only indicative. (c)-(d) Actual single- and double-loaded nanorod body-of-revolution computational model.

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In a similar manner we can determine an estimate of the loading volume’s input admittance. As a matter of fact, with respect to point B shown in Fig. 1(a), the input admittance of the load can be defined as

YL=2πaHφEzh
The same load admittance definition is applied in the case of the double-loaded nanorod with respect to points B and C shown in Fig. 1(b). The preceding definition essentially relies on the assumption that the involved electric and magnetic field components at the probing point B suffice to characterize the electromagnetic properties of the loading volume. At first blush this may seem an over-simplified assumption since the length of the load is longer than its radius. However, as will be demonstrated later in our analysis, for this particular configuration the load admittance approximation yields accurate results.

In order to better assess the accuracy and applicability of the expression in (2) for the problem under study, in what follows we derive a closed-form expression for the load admittance. For this reason we treat the load volume as a dielectric circular cross-section waveguide with permittivityεrL. It is further assumed that mode TM01 (Eρ,Ez,Hφ) suffices to describe the electromagnetic field distribution within this waveguide. This is a reasonable assumption to make since upon illumination by a plane wave the radiating modes of a plasmonic nanorod are attributed to electric and magnetic field distributions that closely resemble those of a linear wire antenna. This will be further demonstrated later in our analysis.

The z-component of the electric and the φ-component of the magnetic field for this mode such that ρaare given by [17]

Ez=J0(kρ1ρ)(ejkzz+Γejkzz)
and
Hφ=jωε0εrLkρ1J0(kρ1ρ)(ejkzz+Γejkzz)
In the preceding expressions kρ1is the transverse wavenumber in the load volume, and εrL represents the dielectric material constitution. Also, kzis the longitudinal wavenumber across the load and Γ is the reflection coefficient at the boundary defined by the load and the nanorod. Now, if the preceding expressions are substituted into (2) and we set ρ=a then it follows that
YL=2πahjωε0εrLkρ1[J1(kρ1a)]J0(kρ1a)=jωε0εrLkρ1J1(kρ1a)J0(kρ1a)2πah
Before proceeding with the remainder of our analysis it is instructive to compute the small argument approximation of the expression in (5). The resulting expression is given by
YL=jωε0εrLπa2h[1+O(kρ1a)2]
Hence, it is evident that the admittance expression in (5) to the first order yields the well-known quasi-static admittance expression of a cylindrical capacitor.

Now, in order to demonstrate the accuracy of the derived admittance expression we examine two characteristic loading scenarios for the single-loaded nanorod shown in Fig. 1(a). The constitution of the nanorod is assumed to be silver modeled as a Drude dielectric whose permittivity, after fitting experimental data [18], is given by

εrAg=ε+fp2f(jνf)
where ε=5, ν=5.13THz and fp = 2213 THz. For the two scenarios examined here the dielectric constant of the loading volume is assumed to beεrL=1j60for the first case where a Zenneck wave is excited andεrL=20jfor the second case where a plasmon wave is excited. Now, application of (5) requires knowledge of the transverse wavenumber in the loadkρ1. In principle this involves solving the following transcendental equation which describes the various modes that can be supported by a dielectric rod [19]
εr1kρ1J1(kρ1a)J0(kρ1a)εr2kρ2H1(2)(kρ2a)H0(2)(kρ2a)=0
subjected to the conditions
kρ12+kz2=εr1k02
and
kρ22+kz2=εr2k02
In the preceding expressions εr1is the relative dielectric permittivity of the load material, whileεr2is set equal to 1 since we consider the nanorod to be immersed in free-space. Also, kρ2is the transverse wavenumber in free space, while kzis the longitudinal wavenumber defined along the length of the nanorod. Finally, Jn()and Hn(2)()are the n-th order Bessel and second kind Hankel functions, respectively. For the numerical solution of (8), Davidenko’s method is employed [20,21]. It should be noted here that the expression in (8) is essentially the transverse resonance condition as applied on the surface of a dielectric rod with relative permittivityεr1, immersed in a dielectric medium with relative permittivityεr2. The aforementioned expression states that atρ=a, the cylindrical wave impedance looking towardsρ=0 should be equal and opposite to the cylindrical wave impedance looking towardsρ+. Therefore, provided that a solution of (8) exists, an alternative yet equivalent expression for the cylindrical load admittance is given by
YL=jωε0εr2kρ2H1(2)(kρ2a)H0(2)(kρ2a)2πah
Now, for both loading scenarios we numerically solve (8) with respect to the complex-valued kz, and from (9) we computekρ1. This result is subsequently substituted into (5) to obtain the desired load admittance.

The load conductance and susceptance computed using (5) and (6) are displayed in Fig. 2. The two responses are denoted as “Dynamic Model’ and “Capacitor Model”, respectively, and we have included them both in order to demonstrate their applicability. These quantities are compared against the numerically predicted values, using the computational model shown in Fig. 1(b), and utilizing the expression in (2). It can be clearly seen how remarkably accurate the dynamic model is for these highly dispersive loading scenarios. It should be mentioned however that the capacitor model does not always fail to provide accurate admittance predictions. As a matter of fact our numerical experimentation revealed that for certain material loadings that do not necessarily result in highly dispersive wavenumbers, the capacitor model captures fairly accurately the admittance response of the load.

 figure: Fig. 2

Fig. 2 Conductance and susceptance comparisons. (a) and (c) εrL = 1-j60. (b) and (d) εrL = −20-j.

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At this point it should be emphasized that since the length-to-radius ratio of the cylindrical loading volume is greater than one, it would be insufficient to assume a-priori that its admittance can be described by that of a cylindrical capacitor. For this reason it was required to apply a “higher order” capacitor model that would be valid beyond the quasi-static limit. A cursory examination of the available field configurations revealed that the TM01 mode would be the most appropriate candidate where, as our analysis indicates, the capacitor admittance is simply the low frequency approximation of the transverse admittance corresponding to the TM01 mode. From our numerical experimentation the validity of the TM01 mode assumption is subject to three conditions. First, it is dependent upon the radius and length of the cylindrical load volume. In other words, the larger these dimensions are the more modes are required in order to accurately describe the admittance properties. Second, the nanorod permittivity should be as negative as possible in order to ensure that an effect equivalent to that of a radial waveguide or of a parallel plate capacitor is established. Third, the nanorod sections are extended long enough so that a cavity effect is created within the cylindrical load volume.

3. Yij-parameters extraction of the loaded nanorod

The calculation of a loaded multi-port network’s input admittance requires knowledge of its admittance matrix. Although for microwave frequencies the extraction of the latter is straightforward, this is not the case with nanodevices operating at optical wavelengths, such as the nanorod geometry under study. The difficulty stems primarily from the fact that it is not trivial to define “ports” across a nanostructure. In this case, a port is defined as a pair of terminals where the voltage difference across them as well as the current flowing through them can be probed. Given an N-port network its Yij-parameters may be defined as

Yij=IiVj,Vk=0,kj
The challenge now is to adapt the preceding definition to the geometry under study so that it yields useful results. With regard to the nanorod schematics shown in Figs. 1(c) and 1(d), the two structures are analyzed as a 2-port and a 3-port network, show in Figs. 3(a) and 3(b) respectively. Port-1 is defined as the port with respect to which the total structure’s input admittance is referenced. This is determined by the current and voltage measured at Point A using the expression in (1). Ports 2 and 3 correspond to the loading volumes which are characterized by the currents and voltages measured at Points B and C, using the expression in (2). Subsequently, the current terms in (12) are computed as
Ii=2πaHϕ
where the index i ranges from 1 to 3, which corresponds to the current measured with respect to the magnetic field at points A, B, and C, respectively. Similarly, the voltages in (12) are computed as
Vi=EzΔi
Again, the index i ranges from 1 to 3, corresponding to the voltage measured with respect to the electric field at points A, B, and C, respectively. Note that Δ1 = g, while Δ{2,3} = h. Finally, what remains to be determined for the application of (12) is how to implement the short-circuit conditions, or how to impose the boundary conditions Vk = 0.

 figure: Fig. 3

Fig. 3 (a) Schematic of the single-loaded 2-port network. (b) Schematic of the double-loaded 3-port network.

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It turns out that an effective way to short-circuit the required ports is by imposing perfect electric conducting (PEC) conditions along the three edges that comprise the Π-shaped boundaries of the 3 ports. Essentially, this boundary condition nullifies the corresponding tangential electric field components, and from (14) this yields zero voltage, or a short-circuited port. For the two structures under study, one needs to perform 2 and 3 numerical simulations, respectively, (shorting the necessary ports each time) in order to derive the appropriate set of Yij parameters for each structure.

Once the preceding task has been completed and the Y-parameters have been determined, the next step is to define how the loaded nanorod’s input admittance is related to the admittance of the loads. For the derivation of such a relation we recall that if the second port of the 2-port network is terminated with a load of admittanceYL, as shown in Fig. 1(a), then the port currents and port voltages are related as:

[I10]=[Y11Y12Y21Y+22YL2][V1V2]
Based on (15), the input admittance of the single-loaded nanorod is defined as:
Yin=I1V1=Y11Y12Y21Y22+YL
Similarly, for the double-loaded nanorod, with respect to the 3-port network shown in Fig. 1(b), if Ports 2 and 3 are terminated with load admittances YL2 and YL3, respectively, then the current flowing in Port 1 is related to the voltages across the three ports as:
[I100]=[Y11Y12Y13Y21Y+22YL2Y23Y31Y32Y+33YL3][V1V2V3]
Consequently, the input admittance of the double-loaded nanorod is defined as:
Yin=I1V1=Y11+Y12V2V1+Y13V3V1=Y11+Y12Y21(Y33+YL3)+Y12Y31Y23Ψ+Y13Y31(Y22+YL2)+Y13Y32Y21Ψ=Y11+Y12Y21(Y33+YL3)Y13Y31(Y22+YL2)Ψ+Y12Y31Y23+Y13Y32Y21Ψ
where
Ψ(Y+22YL2)(Y+33YL3)Y23Y32
At this point all the necessary information has been gathered in order to examine the correlation between the loaded nanorod’s input admittance, as given by (16) and (18) in conjunction with (5), or (11), and its scattering response, when the structure is illuminated by a plane wave.

4. Numerical examples

4.1 Single loaded nanorod

First we examine the simplest loading scenario for the single-loaded nanorod corresponding to the case where the loading volume is filled with silver (the same material as the nanorod), with permittivity given by the expression in (7). In this case the resulting structure is representative of a homogeneous nanorod. This test case should be indicative of the methodology’s accuracy. This is because the proposed technique postulates that even if the current induced along the surface of the plasmonic nanorod is coarsely segmented, through the introduction of the cylindrical loads, then the electromagnetic response of the antenna can still be accurately recovered through the previously derived admittance matrix.

For this demonstration, the first step in the process is to numerically predict the radiation properties of the nanorod antenna. For this reason the loaded nanorod is illuminated by a plane wave polarized parallel to its long dimension. This simulation was performed using the full 3D finite element solver of CST-MWS and the corresponding extinction QECS and QSCS scattering efficiencies are shown in Fig. 4(a). These efficiencies were obtained after dividing the extinction and scattering cross section by the nanorod’s geometric cross section defined as S = 300 × 30 nm2. Note here that the ratio between these two efficiencies can be considered as an estimate of how effectively the structure scatters.

 figure: Fig. 4

Fig. 4 (a) Extinction and scattering efficiencies of loaded nanorod when εrL1=εrAg. (b) Input admittance of loaded nanorod. (c) Electric and magnetic field distribution calculated at the first four resonance peaks as shown in 4(a). Top to bottom plots correspond to 241 THz, 565 THz, 708 THz, and 776 THz respectively.

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The first four resonance peaks are observed at 241 THz, 565 THz, 708 THz, and 776 THz, respectively. In order to identify the nature of these resonances in Fig. 4(c) we have included the electric and magnetic field distributions computed at the aforementioned frequencies. From these surface plots it is evident that all four resonances correspond to odd multiples of the half-wavelength resonance. Note here that the wavelength based terminology stems from the resemblance of a nanorod’s resonances with those of a metallic wire type radio-frequency (RF) antenna. However, in contrast to RF wire antennas, the wavelength that these resonances occur is not directly proportional to the nanorod’s length, as described by Novotny in [22].

Now, for the derivation of the structure’s input admittance given thatεrL1=εrAg, the complex wavenumbers kzand kρ1 were first computed from (8), and subsequently (5) was used to compute the admittance of the load. In Fig. 4(b) the orange vertical lines indicate the frequencies where the scattering resonances occur. Evidently, the proposed admittance model can predict very well the scattering peaks of the loaded nanorod. It should be emphasized that the line-shape of the scattering peaks corresponding to the higher order resonances, as shown in Fig. 4(a), clearly signifies their Fano character, a feature of high aspect ratio plasmonic objects that has also been described in [23]. The Fano character of these resonances is also reflected in their admittance representation. In particular, from Fig. 4(b) it can be clearly seen how much broader the conductance and susceptance of the first resonance are in comparison to the sharper admittance characteristics of the three higher order Fano-type resonances.

The second loading scenario to be examined corresponds to a dielectric material characterized by a relative permittivity ofεrL1=2.4. According to (8) it turns out that the values ofkzlie below the reactive decay region of the structure where the solution of (8) has no meaning [24,25]. Therefore we setkρ1=εrL1k0, and substitute this into (5) to obtain the admittance of the load, which is displayed in Fig. 5(b). The structure’s extinction and scattering efficiencies are presented in Fig. 5(a). In this case the first four peaks occur at 319 THz, 511 THz, 569 THz, and 676 THz, respectively. These frequencies are also indicated for comparison purposes by the orange vertical lines in Fig. 5(c). Evidently, the admittance model can predict the loaded nanorod’s scattering response with a high degree of accuracy.

 figure: Fig. 5

Fig. 5 (a) Extinction and scattering efficiencies of loaded nanorod whenεrL1=2.4. (b) Input admittance of loaded nanorod. (c) Electric and magnetic field distribution calculated at the first four resonance peaks as shown in 5(a). Top to bottom plots correspond to 319 THz, 511 THz, 569 THz, and 676 THz respectively.

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The electric and magnetic field distributions computed at the aforementioned frequencies are shown plotted in Fig. 5(c). Note that in this case the structure is comprised by two separate and different in length silver nanorod sections, connected via the dielectric load. This becomes also evident upon examination of the structure’s scattering response: the first and second resonances correspond to the half-wavelength λe/2 resonances of the long and the short nanorod sections, respectively. The third resonance is the collective response created by the synchronization of a half-wavelength like resonance excited along the shorter nanorod and by the one-wavelength resonance along the longer nanorod. This combined effect creates an effective 3λe/2 resonant behavior. Finally, the forth resonance corresponds to a 3λe/2 resonance of the longer nanorod section. Note that the third and fourth resonances are Fano-type, a feature which is again reflected in the structure’s input admittance response.

4.2 Double loaded nanorod

Finally, in this last subsection, we present four indicative loading scenarios that demonstrate the accuracy of the admittance model in the case of a double-loaded nanorod. Similar to the previous subsection, the first case examined is the one where the two cylindrical loads are filled with silver so that the resulting structure corresponds to a homogeneous silver nanorod. For the second case the two loading volumes are filled with gold whose relative permittivity after fitting experimental data [26] is given by:

εrAg=ε+i=12fp,i2f(jνif)
where ε=2.15, ν1=88.84PHz, ν2=3.22 THz,fp,1=13.80PHz, and fp,2=1.92PHz. For the two last examples non-dispersive dielectric loads were utilized. In particular, for the third case the dielectric material properties of both loads were defined asεrL1=εrL2=2.4, while for the fourth case the relative permittivity of the two loads was defined asεrL1=εrL2=1.0. Note that for the first two loading scenarios a complex wavenumber kzcan be defined, therefore kρ1was computed using (8) and (9). In contrast, for the third and fourth loading scenarios, for the reason explained in the previous subsection, we setkρ1=εrL1k0. The corresponding scattering responses along with the admittance model predictions are summarized in Fig. 6. Again, for comparison purposes in each admittance plot we indicate the resonances where the structure’s scattering response exhibits its peaks by the vertical orange lines. It can be clearly seen that for all cases examined the admittance model for the double loaded nanorod under study can very accurately predict the scattering properties of the structure.

 figure: Fig. 6

Fig. 6 Left column: extinction and scattering efficiencies. Right column: admittances. (a)-(b) Two silver loads. (c)-(d) Two gold loads. (e)- (f) Two free space loads. (g)-(h) Two dielectric loads with εrL1=εrL2=2.4.

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5. Conclusion

We have demonstrated that the scattering response of a multi-loaded plasmonic nanorod can be accurately predicted by treating the structure as a multi-port network and deriving its admittance matrix. The key ingredient for the successful realization of this is the definition of proper ports along the nanorod that enable the corresponding voltages and currents to be effectively defined. Our analysis reveals that for the structure under consideration the short-circuit conditions required for the extraction of the Yij parameters can be trivially achieved by nullifying the tangential electric field components across the ports. Given the structure’s admittance matrix and any set of loads, one can then compute the input admittance of a loaded nanorod. From the resonances of the structure’s admittance one can predict its scattering response. This is because the scattering peaks of an elongated structure, excited by a plane wave polarized parallel to its long dimension, correspond to (2n + 1)λe/2 field configurations and therefore occur at the same frequencies where its input admittance resonates.

The proposed methodology to a certain extent is reminiscent of a simplified reduced order method of moments (MoM) type technique [27]. What differentiates the two approaches is that in the proposed methodology, the size of the admittance matrix is equal to the number of ports squared, as opposed to the conventional MoM technique where the size of corresponding admittance matrix is determined by the structure discretization. Furthermore, in the proposed approach the electromagnetic wave propagator is the finite element solver, and this completely eliminates the necessity to perform current integrations with respect to the problem specific Green’s function, which would be the case for a conventional MoM formulation.

As a final comment, it should be noted that the applicability of the proposed methodology is subject to certain design constraints. First, and in relation to the discussion included in the preceding paragraph, the proposed methodology is not expected to yield accurate results if a very large number of loads is defined across the nanorod. This is simply because the resulting configuration would correspond to a very coarse MoM discretization of the nanorod which would naturally result in erroneous predictions. The technique is expected to provide accurate results only when a small part of the nanorod’s volume is occupied by loading material pockets. Second, the proposed methodology assumes that the admittance of the loading volumes can be characterized by the TM01 mode of a dielectric cylindrical waveguide. This is valid only when the radius of the nanorod, and therefore the loading volume, is small enough while at the same time the length of the loading volume is not significantly longer than its radius. Additionally, the developed admittance model can accurately describe the structure’s resonances when it is illuminated by a normally incident plane wave polarized parallel to its length. When the same structure is illuminated by an obliquely incident plane wave, then the admittance model will predict only the resonances excited by the longitudinal plane wave component. The additional resonances that may be excited due to the transverse component cannot be accurately predicted by the model introduced here.

Acknowledgments

This work was partially supported by an NSF MRSEC under Grant DMR-0820404.

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Figures (6)

Fig. 1
Fig. 1 (a)-(b) Single- and double-loaded nanorod geometry and probing points. The model dimensions are only indicative. (c)-(d) Actual single- and double-loaded nanorod body-of-revolution computational model.
Fig. 2
Fig. 2 Conductance and susceptance comparisons. (a) and (c) εrL = 1-j60. (b) and (d) εrL = −20-j.
Fig. 3
Fig. 3 (a) Schematic of the single-loaded 2-port network. (b) Schematic of the double-loaded 3-port network.
Fig. 4
Fig. 4 (a) Extinction and scattering efficiencies of loaded nanorod when ε rL1 = ε r Ag . (b) Input admittance of loaded nanorod. (c) Electric and magnetic field distribution calculated at the first four resonance peaks as shown in 4(a). Top to bottom plots correspond to 241 THz, 565 THz, 708 THz, and 776 THz respectively.
Fig. 5
Fig. 5 (a) Extinction and scattering efficiencies of loaded nanorod when ε rL1 =2.4 . (b) Input admittance of loaded nanorod. (c) Electric and magnetic field distribution calculated at the first four resonance peaks as shown in 5(a). Top to bottom plots correspond to 319 THz, 511 THz, 569 THz, and 676 THz respectively.
Fig. 6
Fig. 6 Left column: extinction and scattering efficiencies. Right column: admittances. (a)-(b) Two silver loads. (c)-(d) Two gold loads. (e)- (f) Two free space loads. (g)-(h) Two dielectric loads with ε rL1 = ε rL2 =2.4 .

Equations (20)

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Y in = 2πa H φ E z g
Y L = 2πa H φ E z h
E z = J 0 ( k ρ1 ρ)( e j k z z +Γ e j k z z )
H φ = jω ε 0 ε rL k ρ1 J 0 ( k ρ1 ρ)( e j k z z +Γ e j k z z )
Y L = 2πa h jω ε 0 ε rL k ρ1 [ J 1 ( k ρ1 a) ] J 0 ( k ρ1 a) = jω ε 0 ε rL k ρ1 J 1 ( k ρ1 a) J 0 ( k ρ1 a) 2πa h
Y L =jω ε 0 ε rL π a 2 h [ 1+O ( k ρ1 a ) 2 ]
ε r Ag = ε + f p 2 f( jνf )
ε r1 k ρ 1 J 1 ( k ρ 1 a) J 0 ( k ρ 1 a) ε r2 k ρ 2 H 1 (2) ( k ρ 2 a) H 0 (2) ( k ρ 2 a) =0
k ρ1 2 + k z 2 = ε r1 k 0 2
k ρ2 2 + k z 2 = ε r2 k 0 2
Y L = jω ε 0 ε r2 k ρ2 H 1 (2) ( k ρ2 a) H 0 (2) ( k ρ2 a) 2πa h
Y ij = I i V j , V k =0, kj
I i =2πa H ϕ
V i = E z Δ i
[ I 1 0 ]=[ Y 11 Y 12 Y 21 Y + 22 Y L2 ][ V 1 V 2 ]
Y in = I 1 V 1 = Y 11 Y 12 Y 21 Y 22 + Y L
[ I 1 0 0 ]=[ Y 11 Y 12 Y 13 Y 21 Y + 22 Y L2 Y 23 Y 31 Y 32 Y + 33 Y L3 ][ V 1 V 2 V 3 ]
Y in = I 1 V 1 = Y 11 + Y 12 V 2 V 1 + Y 13 V 3 V 1 = Y 11 + Y 12 Y 21 ( Y 33 + Y L3 )+ Y 12 Y 31 Y 23 Ψ + Y 13 Y 31 ( Y 22 + Y L2 )+ Y 13 Y 32 Y 21 Ψ = Y 11 + Y 12 Y 21 ( Y 33 + Y L3 ) Y 13 Y 31 ( Y 22 + Y L2 ) Ψ + Y 12 Y 31 Y 23 + Y 13 Y 32 Y 21 Ψ
Ψ( Y + 22 Y L2 )( Y + 33 Y L3 ) Y 23 Y 32
ε r Ag = ε + i=1 2 f p,i 2 f( j ν i f )
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